Combined magnetic field and lining straight pipe and perforated baffle composite vacuum deposition method

Abstract

The invention discloses a combined magnetic field, lining straight pipe and perforated baffle composite vacuum deposition method, and belongs to the technical field of material surface treatment. Theproblems that during arc ion plating, due to macroparticles, a thin film is polluted, target use is limited, magnetically filtered arc plasmas are damaged, and high-power pulse magnetic control discharge is not stable are solved. A device comprises a grid bias power supply, an arc ion plating target source and power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a movable coil device, a movable coil device power supply, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering powersource, a lining bias straight pipe and porous baffle combined device and power source and the like. The method comprises the steps of thin film deposition, device connecting and system starting. When the vacuum degree in a vacuum chamber is smaller than 10<-4> Pa, work gas is led in, a coating power source is started, energy of plasmas can be adjusted through the grid bias power supply, the multi-stage magnetic field device and the movable coil device remove macroparticle defects and guide transmission of composite plasmas, losses in the vacuum chamber are reduced, and process parameters areset.

Description

Technical field [0001] The invention relates to a vacuum deposition method combining a combined magnetic field, a lined straight pipe and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin film by arc ion plating, the current density of arc spot is as high as 2.5~5×10 10 A / m 2 , Causing molten liquid metal to appear at the arc spot on the surface of the target, which is sprayed out in the form of droplets under the action of the partial plasma pressure, attached to the surface of the film or embedded in the film to form "Macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In arc plasma, since the moving speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is greater ...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias straight tube and the porous baffle combined device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the inner tube with high transmission efficiency. The combination device of lined bias straight pipe and porous baffle and multi-stage magnetic field filter device, and then use the combined effect of the magnetic field constraint of the movable coil device and the self-bias electric field attraction to eliminate the interference from the multi-stage magnetic field device and lined bias straight pipe The large particle defects contained in the arc plasma transmitted by the combined device with the porous baffle, at the same time, the moving coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the The thin film deposition on the surface of the substrate workpiece at any position in the vacuum chamber and the control and adjustment of the film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the shape of the substrate, and completely eliminate Large particle defects may remain in the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias straight tube and the porous baffle, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage. The bias electric field suppression effect on the surface of the substrate removes large particle defects in the arc plasma, and prepares continuous and dense high-quality films. Transmission efficiency, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a vacuum deposition combined with a combined magnetic field, lined straight tube and porous baffle is proposed method

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