Combined method of arc ion plating and twin target bipolar high-power pulsed magnetron sputtering

Abstract

The invention discloses a combined method of arc ion plating and twin target bipolar high-power pulsed magnetron sputtering, and belongs to the technical field of material surface treatment. The method aims to solve the problem of large particles due to use of low-melting-point pure metal (like aluminum) or multicomponent alloy materials and non-metallic materials (like graphite) in arc ion plating and the limitation of semiconductor material silicon, and discharge arcing in the unipolar high-power pulsed magnetron sputtering technique and the limit in using of high-melting-point and difficult-to-ionize target materials (like zirconium) are eliminated. The method includes the steps that first, workpieces are placed on a sample table inside a vacuum chamber and connected with related equipment; second, thin film deposition is performed, working gas is introduced when vacuumizing is executed to 10<-4> Pa, and a film coating power supply is switched on; and the large-particle defect in arc ion plating is overcome through high-power pulsed magnetron sputtering, the high-melting-point and difficult-to-ionize materials are ionized through arc ion plating, twin targets generate multi-component plasma and further adjust the content of the plasma in a thin film, plasma energy is regulated through a grid bias power supply, and accordingly the thin film can be prepared.

Description

technical field [0001] The invention relates to a composite method of arc ion plating and twin-target bipolar high-power pulse magnetron sputtering, belonging to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology can obtain almost all metal ions including carbon ions. At the same time, it has the advantages of high ionization rate, good diffraction, good film-substrate bonding force, good coating quality, high deposition efficiency and easy operation of equipment. Attention is paid to it, and it is one of the physical vapor deposition preparation technologies widely used in industry at present. It can not only be used to prepare metal protective coatings, but also realize the preparation of high-temperature ceramic coatings such as nitrides and carbides through the adjustment of process methods, and it is also used in the field of functional thin films. Even for parts with irregular shapes, arc ion plating can achieve...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the traditional arc ion plating method is easy to produce large particle defects, the magnetic filter technology causes low arc plasma transmission efficiency and the use of pure metals with low melting points (such as aluminum) or multi-element alloy materials (such as aluminum-silicon alloys), Non-metallic materials (such as graphite) and semiconductor materials (such as silicon) are used as large particles in the traditional arc ion plating method, the ionization rate of the traditional magnetron sputtering technology and the deposition efficiency of the film are low, and the high melting point target is used Limitation, using pure metals with low melting point (such as aluminum) or multi-element alloy materials (such as aluminum-silicon alloy) and non-metallic materials (such as graphite and semicondu

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