Composite vacuum deposition method of combination magnetic field, lining stepped tube and porous baffle

A porous baffle and vacuum deposition technology, which is applied in vacuum evaporation plating, ion implantation plating, coating, etc., can solve the problems of film composition pollution, large particle defects, and low film deposition efficiency, so as to ensure uniformity, The effect of improving utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The combination of the shape constraints of the lined bias stepped tube and the porous baffle and the combined effect of the bias electric field attraction eliminates the large particle defects contained in the arc plasma, and at the same time ensures that the arc plasma passes through the interior with high transmission efficiency. The combined device of the lined ...

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  • Composite vacuum deposition method of combination magnetic field, lining stepped tube and porous baffle
  • Composite vacuum deposition method of combination magnetic field, lining stepped tube and porous baffle
  • Composite vacuum deposition method of combination magnetic field, lining stepped tube and porous baffle

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-4 Describe this embodiment. In this embodiment, a device used in a vacuum deposition method that combines a magnetic field with a lined stepped tube and a porous baffle includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source (3 ), high-power pulsed magnetron sputtering power supply (4), high-power pulsed magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), high-power pulsed magnetron sputtering power supply waveform oscilloscope (7), Waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-level magnetic field device (12), multi-level magnetic field device power supply (13), lining bias Ladder tube and porous baffle combined device (14), lining bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In this device:

[0027]The workpi...

specific Embodiment approach 2

[0044] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method that is lined with a stepped tube and a porous baffle, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-level magnetic field device (12), turn on the lining bias power supply (15), adjust the bias voltage of the lining bias stepped tube and porous baffle combination device (14), turn on the movable coil device power supply (10) to adjust The movable coil device (9) adjusts the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse The period of the output pulse of the magnetron sputtering power supply (4) is an integer multiple of the output pulse of the bias po...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method that is lined with a stepped tube and a porous baffle, and the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on. (5) Adjust the multi-level magnetic field device (12), turn on the lining bias power supply (15), adjust the bias voltage of the lining bias stepped tube and porous baffle combination device (14), turn on the movable coil device power supply (10) to adjust The movable coil device (9) adjusts the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse The magnetron sputtering power supply (4) outputs high-power pulses and the phase of the bias pulse waveform output by the bias ...

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Abstract

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, alining bias voltage stepped tube and porous baffle device and power supply, a movable coil device and power supply, a waveform matching device, a high power pulse magnetron sputtering target source and power sully, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamberis less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field, a lined stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per ...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/3485C23C14/35C23C14/564
Inventor 魏永强王好平宗晓亚蒋志强
Owner 魏永强
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