Composite vacuum deposition method of combination magnetic field, lining stepped tube and porous baffle

Abstract

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, alining bias voltage stepped tube and porous baffle device and power supply, a movable coil device and power supply, a waveform matching device, a high power pulse magnetron sputtering target source and power sully, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamberis less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field, a lined stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per ...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The combination of the shape constraints of the lined bias stepped tube and the porous baffle and the combined effect of the bias electric field attraction eliminates the large particle defects contained in the arc plasma, and at the same time ensures that the arc plasma passes through the interior with high transmission efficiency. The combined device of the lined bias stepped tube and the porous baffle and the multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the interference from the multi-stage magnetic field device and the lined bias stepped tube. The large particle defects contained in the arc plasma transmitted by the combined device with the porous baffle, at the same time, the moving coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the The thin film deposition on the surface of the substrate workpiece at any position in the vacuum chamber and the control and adjustment of the film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the shape of the substrate, and completely eliminate Large particle defects may remain in the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias stepped tube and the porous baffle, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage. The bias electric field suppression effect on the surface of the substrate removes large particle defects in the arc plasma, and prepares continuous and dense high-quality films. Transmission efficiency, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a vacuum deposition combined with a combined magnetic field and a lined stepped tube and a porous baffle is proposed method

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