Combined magnetic field and lining bias voltage straight pipe composite vacuum deposition method

Abstract

The invention discloses a combined magnetic field and lining bias voltage straight pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltagestraight pipe device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coatingpower source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects and guiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field and a liner bias straight tube, belonging to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is ...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias straight tube device and the composite effect of bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the lined bias straight tube with high transmission efficiency device and multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the arc plasma contained in the multi-stage magnetic field device and the lined bias straight tube device Large particle defects, while using the movable coil device to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, to realize the control of film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber Adjust and reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the shape of the substrate, and completely eliminate the transmission from the multi-stage magnetic field device and the lined bias straight tube device There may be large particle defects remaining in the arc plasma, so that the ion energy is adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and the large particle defects in the arc plasma are removed by using the bias electric field suppression effect on the surface of the substrate. Continuous, dense and high-quality film, while realizing the control of the content of target elements in the film, reducing the production cost of using alloy targets, improving the transmission efficiency of plasma, increasing the deposition speed of the film, and reducing or even eliminating the impact of large particle defects on the microstructure of the film , Continuous dense deposition and adverse effects on performance, a vacuum deposition method combining magnetic field and lined bias straight tube was proposed

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