Combined magnetic field and lining porous baffle combined vacuum deposition method

Abstract

The invention provides a combined magnetic field and lining porous baffle combined vacuum deposition method and belongs to the technical field of material surface treatment. The combined magnetic field and lining porous baffle combined vacuum deposition method is provided for solving the problems of pollution of big particles to films, using restriction to target materials, losses of magnetic filtered electric arc plasmas, unstable discharge of high-power pulse magnetron sputtering and the like during arc ion plating. A device adopted in the method comprises a bias power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias voltage porous baffle device, a lining bias power supply, a movable coil device, a movable coil device power supply, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering powersupply and the like. The method comprises the steps of depositing a film, connecting the device, starting the system, introducing working gas when the internal vacuum degree of a vacuum chamber is less than 10<-4> Pa, starting a film plating power supply, conducting adjustment on energy of plasmas through the bias power supply, eliminating big particle defects and guiding transmission of the plasmas through the multi-stage magnetic field device and the movable coil device, reducing loss in the vacuum chamber, and setting parameters of the preparation process.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field and a lining porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is gr...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the liner bias porous baffle device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the liner bias hole with high transmission efficiency The baffle device and the multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the arc plasma transmitted from the multi-stage magnetic field device and the lining bias porous baffle device At the same time, the moving coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the film deposition and film deposition on the surface of the substrate workpiece at any position in the vacuum chamber. The control and adjustment of composition can reduce the loss of compound plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the substrate shape, and completely eliminate the problems caused by the multi-level magnetic field device and the lining bias porous barrier. Large particle defects may remain in the arc plasma transmitted from the plate device, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage, and the large particle defects in the arc plasma can be removed by using the suppression effect of the bias electric field on the surface of the substrate. Particle defects, to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of plasma, increase the deposition speed of films and reduce or even eliminate large particle defects Detrimental effects on thin film microstructure, continuous dense deposition and service performance, a vacuum deposition method combining magnetic field and lined porous baffle is proposed

Images