Combined magnetic field and lining porous baffle combined vacuum deposition method

Abstract

The invention provides a combined magnetic field and lining porous baffle combined vacuum deposition method and belongs to the technical field of material surface treatment. The combined magnetic field and lining porous baffle combined vacuum deposition method is provided for solving the problems of pollution of big particles to films, using restriction to target materials, losses of magnetic filtered electric arc plasmas, unstable discharge of high-power pulse magnetron sputtering and the like during arc ion plating. A device adopted in the method comprises a bias power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias voltage porous baffle device, a lining bias power supply, a movable coil device, a movable coil device power supply, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering powersupply and the like. The method comprises the steps of depositing a film, connecting the device, starting the system, introducing working gas when the internal vacuum degree of a vacuum chamber is less than 10<-4> Pa, starting a film plating power supply, conducting adjustment on energy of plasmas through the bias power supply, eliminating big particle defects and guiding transmission of the plasmas through the multi-stage magnetic field device and the movable coil device, reducing loss in the vacuum chamber, and setting parameters of the preparation process.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field and a lining porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is gr...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the liner bias porous baffle device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the liner bias hole with high transmission efficiency The baffle device and the multi-stage magnetic f

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