Composite vacuum deposition method of combination magnetic field, lining special-shaped tube and porous baffle

Abstract

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining special-shaped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a target source of arc ion plating, a multistage magnetic field device, a lining bias voltage special-shaped tube and porous baffle combination device, a movable coil device, a high power pulsed magnetron sputtering target source and relevant power supply, a waveform matching device, a bias voltage power supply, and the like;and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4>Pa, a platingpower supply is turned on, the bias voltage power supply regulates energy of the plasma, the combination magnetic field and the lining special-shaped tube and porous baffle device eliminate large particle defects and guide transmission of the composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combining a magnetic field, a lined special-shaped tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, the current density of arc spot is as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the surface of the target, sputtering out in the form of droplets under the action of local plasma pressure, attached to the surface of the film or embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In arc plasma, since the moving speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is greate...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube, stepped tube and porous baffle combined device and the combined effect of bias electric field attraction can eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma has a higher The transmission efficiency is eliminated from the multi-level magnetic field through the combination of the lined bias conical tube, the stepped tube and the porous baffle device, and the multi-stage magnetic field filter device, and then using the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction. The large particle defects contained in the arc plasma transmitted by the device and the liner bias conical tube, stepped tube and porous baffle device, while using the movable coil device to control the combination of high-power pulse magnetron sputtering and arc ion plating The transmission direction of the plasma in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, reduces the loss of the composite plasma in the vacuum chamber, and overcomes the limitations of the vacuum chamber and the target source position or the substrate. The non-uniform film deposition problem caused by the shape limitation, completely removes the large particle defects that may remain in the arc plasma transmitted from the multi-level magnetic field device and the lined bias conical tube, stepped tube and porous baffle combination device, Make the surface of the workpiece adjust the ion energy under the condition of applying a negative bias voltage, use the bias electric field suppression effect on the surface of the substrate to remove large particle defects in the arc plasma, prepare continuous, dense and high-quality films, and at the same time realize the target material in the film Adding control of element content, reducing the production cost of using alloy targets, improving the transmission efficiency of plasma, increasing the deposition rate of thin films and reducing or even eliminating the adverse effects of large particle defects on thin film microstructure, continuous dense deposition and service performance, a new method is proposed. A Vacuum Deposition Method Combining Magnetic Field and Lining Irregular Tube and Porous Baffle

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