Combination deposition method of arc ion plating and high power pulse magnetron sputtering

Abstract

The invention provides a deposition method adopting combination of arc ion plating and high power pulsed magnetron sputtering, belongs to the technical field of material surface treatment, and aims to solve the problems of large particles caused by the fact that low-melting-point pure metal or a multi-element alloy material and a non-metal material, especially a semiconducting material and an insulating material, are taken as target materials to be applied in a traditional arc ion plating method, limitation of use extension of arc ion plating target materials, low ionization rate and low thin film deposition efficiency of a traditional magnetron sputtering technology as well as unstable discharging of conventional high power pulsed magnetron sputtering. The method comprises steps as follows: step one, a to-be-coated workpiece is placed on a sample table in a vacuum chamber, a related power supply is switched on; step two, thin film deposition is performed and comprises steps as follows: when the vacuum degree in the vacuum chamber is lower than 10<-2> Pa, working gas is introduced, gas pressure is adjusted, the related power supply is switched on, after the target surface is cleaned, a synchronous waveform matching device is adopted to adjust waveforms output by a grid bias power supply and a high power pulsed magnetron sputtering power supply, required technological parameters are set, and thin film deposition is performed.

Description

technical field [0001] The invention relates to a combined deposition method of arc ion plating and high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] The magnetron sputtering technology initially adopts the DC power supply mode. Compared with the arc ion plating method, there are no large particle defects, and the low-temperature sputtering deposition of various materials can be realized, but the ionization rate of the sputtering material is very low, and the sputtering target The power density is at 50W / cm 2 , the number of ions cannot be obtained during film deposition, resulting in low deposition efficiency, and at the same time, the energy carried by ions is low, making the film structure not dense enough. In 1999, V. Kouznetsov et al. of Linköping University in Sweden (Kouznetsov V, Macák K, Schneider J M, Helmersson U, Petrov I. A novel pulsed magnetronsputter technique utilizing very...

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Problems solved by technology

[0009] The purpose of the present invention is to solve the problem of using low-melting point pure metal or multi-element alloy material and non-metallic material (especially semiconductor material and insulating material) as target material in the traditional arc ion plating method of large particles, traditional magnetron sputtering Due to the problems of low technical ionization rate and film deposition efficiency and the instability of high-power pulse magnetron sputtering discharge, pure metals or multi-element alloy materials and non-metallic materials (especially semiconductor materials and insulating materials) with low melting points are used as high-power sputtering materials. The target material of pulsed magnetron sputtering can generate continuous and stable plasma by using arc ion plating method to eliminate the discharge instability phenomenon of high power magnetron sputtering technology and the adverse effect of ion resorption effect on film deposition, so that When a negative bias is applied to the surface of the workpiece, high-quality thin films can be prepared continuously and densely. At the same time, it can control the content of elements in the thin film, reduce the production cost of using alloy targets, improve the deposition efficiency of thin films, and reduce discharge instability and large particles. The adverse effects of defects on film growth and properties, a deposition method combined with arc ion plating and high-power pulsed magnetron sputtering was proposed

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