Vacuum plating method adopting combination of composite magnetic field, lining ladder pipe and porous baffle

Abstract

The invention discloses a vacuum plating method adopting combination of a composite magnetic field, a lining ladder pipe and a porous baffle, and belongs to the technical field of material surface processing. The problems of pollution of macroparticles in arc ion plating towards a thin film, use limitation of a target material, loss of magnetically filtered arc plasma, instability of high-power pulse magnetron sputtering discharge and the like are solved. A device comprises a bias voltage power source, an arc ion plating target source, an arc ion plating power source, a multi-level magnetic field device, a multi-level magnetic field device power source, a lining bias voltage ladder pipe and porous baffle device, a lining bias voltage power source, a movable coil device, a movable coil device power source, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering power source and the like. The vacuum plating method adopting the combination of the composite magnetic field, the lining ladder pipe and the porous baffle comprises a step of thin film deposition, specifically, the devices are connected, a system is turned on, when a vacuum degree is lower than 10<-4>Pa, working gas is introduced, the bias voltage power source is started to adjust the energy of plasma, the multi-level magnetic field device and the movablecoil device eliminate macroparticle defects and guide transmission of composite plasm, loss in a vacuum chamber is reduced, and preparation technology parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method in which a combined magnetic field is combined with a lined stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large partic...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of twin target high-power pulse magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to generate continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtration The combination of method and liner bias stepped tube and porous baffle combined device's own shape constraints and bias electric field attraction can eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma has a high transmission efficiency Through the combined device of the lined bias stepped tube and the porous baffle and the multi-stage magnetic ...

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