Composite vacuum deposition method of combination magnetic field, lining tapered tube and stepped tube

A technology of vacuum deposition and stepped tube, applied in vacuum evaporation plating, ion implantation plating, coating and other directions, can solve the problems of film component pollution, large particle defects, low film deposition efficiency, etc., to ensure uniformity, improve The effect of utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube and the stepped tube combination device and the combined effect of bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the inner tube with high transmission efficiency. The combined device of the lined bias conical tube and the stepped tube and the multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the interference from the multi-stage magnetic field device and the lined bias conical tube. The large particle defects contained in the arc plasma transmitted by the combined device of tube and stepped tube, at the same time, the moving coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the The thin film deposition on the surface of the substrate workpiece at any position in the vacuum chamber and the control and adjustment of the film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the shape of the substrate, and completely eliminate Large particle defects may remain in the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias conical tube and the stepped tube, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage. The bias electric field suppression effect on the surface of the substrate removes large particle defects in the arc plasma, and prepares continuous and dense high-quality films. Transmission efficiency, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a combination of magnetic field and lined tapered tube and stepped tube composite vacuum deposition is proposed method

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  • Composite vacuum deposition method of combination magnetic field, lining tapered tube and stepped tube
  • Composite vacuum deposition method of combination magnetic field, lining tapered tube and stepped tube
  • Composite vacuum deposition method of combination magnetic field, lining tapered tube and stepped tube

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-4 Describe this embodiment. In this embodiment, a vacuum deposition method combining a magnetic field and a lined tapered tube and a stepped tube is combined. The device used includes a bias power supply (1), an arc power supply (2), an arc ion plating target source (3 ), high-power pulsed magnetron sputtering power supply (4), high-power pulsed magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), high-power pulsed magnetron sputtering power supply waveform oscilloscope (7), Waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-level magnetic field device (12), multi-level magnetic field device power supply (13), lining bias Conical tube and stepped tube combined device (14), lining bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In this device:

[0027]The work...

specific Embodiment approach 2

[0044] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lined conical tube is combined with the stepped tube, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15), adjust the bias voltage of the lining bias conical tube and stepped tube combination device (14), turn on the movable coil device power supply (10) to adjust The movable coil device (9) adjusts the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse The period of the output pulse of the magnetron sputtering power supply (4) is an integer multiple of the output pulse of ...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lined tapered tube and the stepped tube are combined, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15), adjust the bias voltage of the lining bias conical tube and stepped tube combination device (14), turn on the movable coil device power supply (10) to adjust The movable coil device (9) adjusts the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse The magnetron sputtering power supply (4) outputs high-power pulses and the bias pulse waveform output by the bias power s...

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Abstract

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining tapered tube and a stepped tube, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a target source of arc ion plating, a multistage magnetic field device, a movable coil device, a high power pulse magnetron sputteringtarget source, a lining bias voltage tapered tube and stepped tube combination device and relevant power supply, a bias voltage power supply, a waveform matching device, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combining a magnetic field and a lining tapered tube and a stepped tube, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/32C23C14/54
CPCC23C14/325C23C14/3485C23C14/35C23C14/54
Inventor 魏永强王好平宗晓亚张新国刘学申蒋志强
Owner 魏永强
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