Vacuum film plating method with combined magnetic field, lined bias voltage cone-shaped tube and straight tube combined

Abstract

The invention discloses a vacuum film plating method with a combined magnetic field, a lined bias voltage cone-shaped tube and a straight tube combined, and belongs to the technical field of materialsurface treatment. The vacuum film plating method with the combined magnetic field, the lined bias voltage cone-shaped tube and the straight tube combined aims to solve the problems such as the pollution of macroparticles to a thin film, the use limitation of a target material, the loss of magnetically-filtered arc plasma and the instability of high-power pulsed magnetron sputtering discharge in arc ion plating. Devices relating to the vacuum film plating method comprise an arc ion plating target source, a multistage magnetic field device, a combined device of the lined bias voltage cone-shaped tube and the straight tube, a twin target high-power pulsed magnetron sputtering target source, a movable coil device, related power sources, a waveform matching device, a bias voltage power source,a sample table and a vacuum chamber. Thin film deposition comprises the steps that the devices are connected; a system is started; when the vacuum degree in the vacuum chamber is less than 10<-4> Pa,a working gas is introduced into the vacuum chamber, a film plating power source is started, the bias voltage power source adjusts the energy of the plasma, the multistage magnetic field device and the movable coil device eliminate defects of the macroparticles and guide the transmission of the composite plasma, the loss in the vacuum chamber is reduced, and technical parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method in which a combined magnetic field is combined with an inner-lined bias conical tube and a straight tube, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of ...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias tapered tube and the straight tube combination device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the inner tube with high transmission efficiency. The combined device of the lined bias conical tube and the straight tube and the multi-stage magnet...

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