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Combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method

A technology of vacuum deposition and conical tube, applied in vacuum evaporation plating, ion implantation plating, coating, etc., can solve the problems of film composition pollution, large particle defects, low film deposition efficiency, etc., to ensure uniformity, The effect of improving utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube device and the complex effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the lined bias cone with high transmission efficiency Shaped tube device and multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the arc plasma transmitted from the multi-stage magnetic field device and the lined bias conical tube device At the same time, the moving coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the film deposition and film deposition on the surface of the substrate workpiece at any position in the vacuum chamber. The control and adjustment of composition can reduce the loss of compound plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the substrate shape, and completely eliminate the problems caused by the multi-level magnetic field device and the lining bias cone. Large particle defects may remain in the arc plasma transmitted from the tube device, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage, and the large particle defects in the arc plasma can be removed by using the bias electric field suppression effect on the surface of the substrate. Particle defects, to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of plasma, increase the deposition speed of films and reduce or even eliminate large particle defects Detrimental effects on thin film microstructure, continuous dense deposition and service performance, a vacuum deposition method combining magnetic field and lined biased conical tube is proposed

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  • Combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method
  • Combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method
  • Combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-4 Describe this embodiment. In this embodiment, a vacuum deposition method in which a combined magnetic field is compounded with a lined bias conical tube includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source (3). , high-power pulsed magnetron sputtering power supply (4), high-power pulsed magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), high-power pulsed magnetron sputtering power supply waveform oscilloscope (7), waveform Synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field device power supply (13), lining bias cone Shaped tube device (14), lining bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In this device:

[0027]The workpiece to be processed is placed on th...

specific Embodiment approach 2

[0044] Specific Embodiment 2: The difference between this embodiment and Embodiment 1 is that a vacuum deposition method in which a combined magnetic field is combined with a lined bias conical tube is connected, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply ( 5) Adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15) to adjust the bias voltage of the lining bias conical tube device (14), turn on the movable coil device power supply (10) and adjust the movable coil device (9 ), adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse magnetron sputtering power supply (4) The period of the output pulse is an integer multiple of the output pulse of the bias power supply (1), such as Figure 4 As shown...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lined bias conical tube is compounded, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply ( 5) Adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15) to adjust the bias voltage of the lining bias conical tube device (14), turn on the movable coil device power supply (10) and adjust the movable coil device (9 ), adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the high-power pulse magnetron sputtering power supply (4) Output high-power pulse and bias power supply (1) The phase of the output bias pulse waveform is adjustable, such as Figure 4 As shown...

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Abstract

The invention discloses a combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltage conical pipe device and bias voltage power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects andguiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field and a lining bias conical tube, belonging to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit time is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/564C23C14/352C23C14/3485
Inventor 魏永强王好平宗晓亚蒋志强
Owner 魏永强
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