60results about How to "Dense crystal structure" patented technology

The invention discloses a combined method of arc ion plating and twin target bipolar high-power pulsed magnetron sputtering, and belongs to the technical field of material surface treatment. The method aims to solve the problem of large particles due to use of low-melting-point pure metal (like aluminum) or multicomponent alloy materials and non-metallic materials (like graphite) in arc ion plating and the limitation of semiconductor material silicon, and discharge arcing in the unipolar high-power pulsed magnetron sputtering technique and the limit in using of high-melting-point and difficult-to-ionize target materials (like zirconium) are eliminated. The method includes the steps that first, workpieces are placed on a sample table inside a vacuum chamber and connected with related equipment; second, thin film deposition is performed, working gas is introduced when vacuumizing is executed to 10<-4> Pa, and a film coating power supply is switched on; and the large-particle defect in arc ion plating is overcome through high-power pulsed magnetron sputtering, the high-melting-point and difficult-to-ionize materials are ionized through arc ion plating, twin targets generate multi-component plasma and further adjust the content of the plasma in a thin film, plasma energy is regulated through a grid bias power supply, and accordingly the thin film can be prepared.