Vacuum coating method for compounding combined magnetic field and lining bias-voltage straight tube

A technology of vacuum coating and magnetic field, applied in vacuum evaporation coating, sputtering coating, ion implantation coating and other directions, can solve the problems of film component pollution, large particle defects, low film deposition efficiency, etc., to ensure uniformity, The effect of improving utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias straight tube device and the composite effect of bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the lined bias straight tube with high transmission efficiency device and multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the arc plasma contained in the multi-stage magnetic field device and the lined bias straight tube device Large particle defects, while using the movable coil device to control the transmission direction of the composite plasma of twin target high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, to achieve film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber The control adjustment can reduce the loss of compound plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the shape of the substrate, and completely eliminate the multi-level magnetic field device and the lined bias straight tube device. Large particle defects may remain in the arc plasma transmitted from the medium, so that the surface of the workpiece can adjust the ion energy under the condition of applying a negative bias voltage, and the large particle defects in the arc plasma can be removed by using the suppression effect of the bias electric field on the surface of the substrate , to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of plasma, increase the deposition speed of the film, and reduce or even eliminate the impact of large particle defects on the film The adverse effects of microstructure, continuous dense deposition and service performance, a vacuum coating method combined with magnetic field and lined bias straight tube is proposed

Method used

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  • Vacuum coating method for compounding combined magnetic field and lining bias-voltage straight tube
  • Vacuum coating method for compounding combined magnetic field and lining bias-voltage straight tube
  • Vacuum coating method for compounding combined magnetic field and lining bias-voltage straight tube

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-6 Describe this embodiment. In this embodiment, a device used in a vacuum coating method in which a combined magnetic field is combined with a lined bias straight tube includes a bias power supply (1), an arc power supply (2), an arc ion plating target source (3), Twin target high power pulse magnetron sputtering power supply (4), twin target high power pulse magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), twin target high power pulse magnetron sputtering power supply waveform oscilloscope (7), waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-level magnetic field device (12), multi-level magnetic field device power supply (13), Lined bias straight tube device (14), lined bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In this device:

[0027]The workpi...

specific Embodiment approach 2

[0044] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum coating method in which the lined bias straight tube is combined, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15) to adjust the bias voltage of the lining bias straight tube device (14), turn on the movable coil device power supply (10) and adjust the movable coil device (9), Adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the twin target high-power pulse magnetron sputtering power supply (4) The period of the output pulse of the radio source (4) is an integer multiple of the output pulse of the bias power ...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum coating method in which the liner bias straight tube is compounded, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) adjust the multi-stage magnetic field device (12), turn on the lining bias power supply (15) to adjust the bias voltage of the lining bias straight tube device (14), turn on the movable coil device power supply (10) and adjust the movable coil device (9), Adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously, and the twin target high-power pulse magnetron sputtering power supply (4) The phase of the high-power pulse output by the radio source (4) and the bias pulse waveform output by the bias po...

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Abstract

The invention discloses a vacuum coating method for compounding a combined magnetic field and a lining bias-voltage straight tube, belongs to the technical field of material surface treatment, and solves the problems of the pollution of the film, the target use restriction, the loss of the magnetic filtered arc plasma and the instability of high-power pulse magnetic-controlled sputtering discharging due to the macroparticles in the arc ion plating. The vacuum coating device comprises a bias-voltage power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias-voltage straight tube device, a lining bias-voltage power supply, an movable coil device, an movable coil device power supply, a waveform matching device, a twin-target high-power pulse magnetic-controlled sputtering target source, a twin-target high-power pulse magnetic-controlled sputtering power supply and thelike. The vacuum coating method comprises the steps that the film is deposited, the device is connected, the system is started, when the vacuum degree in the vacuum chamber is less than 10 <-4>Pa, the working gas is fed, the coating power supply is started, the bias-voltage power supply adjusts the energy of the plasma, the multi-stage magnetic field device and the movable coil device eliminate the macroparticles defects and guide the transmission of the compound plasma, the loss in the vacuum chamber is reduced, and the preparation process parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method in which a combined magnetic field is compounded with a lined bias straight tube, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/35C23C14/54
CPCC23C14/325C23C14/3485C23C14/352C23C14/54
Inventor 魏永强王好平宗晓亚侯军兴蒋志强
Owner 魏永强
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