Rectangular plane cathode arc source and cathode target material ablation device

A planar cathode and cathode target technology, which is applied in the metal material coating process, ion implantation plating, coating, etc., can solve the problems of high heating on the surface of the cathode target, complex device structure, and difficult scanning.

Active Publication Date: 2014-01-22
AVIC BEIJING AERONAUTICAL MFG TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] 2) Using electromagnetic coils for control, the use of electromagnetic coils for control is mainly to adjust the strength of the magnetic field by changing the magnitude of the current of the electromagnetic coil, so the variable range is relatively large, but the disadvantage is that the structure of the device is more complicated
[0008] However, limited by the shape and arrangement of permanent

Method used

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  • Rectangular plane cathode arc source and cathode target material ablation device
  • Rectangular plane cathode arc source and cathode target material ablation device
  • Rectangular plane cathode arc source and cathode target material ablation device

Examples

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Effect test

example 1

[0061] Example 1: Preparation of chromium nitride thin film under the control of permanent magnet magnetic field

[0062] based on figure 1 The arc source structure shown is controlled by a permanent magnet magnetic circuit, using such as Figure 4 The shown device carries out the technology of cathodic arc deposition chromium nitride film and prepares the experiment, and its operation steps are as follows:

[0063] 1) Cleaning of parts

[0064] Clean the parts ultrasonically with acetone for 30 minutes, dry them with a hair dryer, put them in a vacuum chamber, pump them down to 0.004Pa, let in argon gas, adjust the argon gas flow rate to 8 sccm, control the air pressure at 0.08Pa, turn on the gas ion source, and carry out Argon ion bombardment cleaning, the cleaning time is controlled at 45min.

[0065] 2) Preparation of Cr transition layer

[0066] Adjust the argon gas flow rate to 50sccm, control the air pressure at 0.6Pa, manually adjust the distance between the cathod...

example 2

[0069] Example 2: Preparation of titanium nitride thin films under the control of the composite magnetic field of permanent magnets and electromagnetic coils

[0070] based on figure 1 The shown arc source structure adopts the combined magnetic circuit control method of permanent magnet group and electromagnetic coil. Figure 6 The shown device carries out the preparation experiment of the technique of depositing titanium nitride film by cathodic arc method, and its operation steps are as follows:

[0071] 1) Cleaning of parts

[0072] Clean the parts ultrasonically with acetone for 30 minutes, dry them with a hair dryer, put them in a vacuum chamber, pump them down to 0.004Pa, let in argon gas, adjust the argon gas flow rate to 8 sccm, control the air pressure at 0.08Pa, turn on the gas ion source, and carry out Argon ion bombardment cleaning, the cleaning time is controlled at 45min.

[0073] 2) Preparation of Ti transition layer

[0074] Adjust the argon gas flow rate to ...

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PUM

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Abstract

The invention provides a rectangular plane cathode arc source and a cathode target material ablation device. The rectangular plane cathode arc source comprises an electromagnetic coil, a central permanent magnet group, and a peripheral permanent magnet group which is opposite to the central permanent magnet group in polarity, wherein the central permanent magnet group is arranged at the center of the electromagnetic coil; the peripheral permanent magnet group is arranged at the periphery of the electromagnetic coil. By adopting the rectangular plane cathode arc source and the cathode target material ablation device provided by the invention, the utilization rate and the deposition rate of the cathode target material can be ensured simultaneously when the quality of the prepared coating is improved.

Description

technical field [0001] The invention relates to the technical field of physical vapor deposition, in particular to a rectangular planar cathode arc source and cathode target material ablation device. Background technique [0002] Physical vapor deposition (PVD) refers to the process of using physical processes to realize material transfer, and transfer atoms or molecules from the source to the surface of the substrate. It can spray some particles with special properties on the matrix with lower performance, so that the matrix has better performance. The basic methods of PVD are: vacuum evaporation, sputtering, ion plating, etc. [0003] As a kind of PVD method, the cathode arc technology is widely used in the preparation of photoelectric and corrosion-resistant coatings and films. Compared with other PVD methods, the cathode arc not only has high deposition rate, plasma beam energy High advantages, and the obtained film has small internal stress, high bonding strength and ...

Claims

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Application Information

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IPC IPC(8): C23C14/32
Inventor 马国佳王明娥刘星孙刚张林
Owner AVIC BEIJING AERONAUTICAL MFG TECH RES INST
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