Multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method

Abstract

The invention discloses a multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method and belongs to the technical field of material surface treatment. The problems that low-melting-point pure metal (such as aluminum) or multi-component alloy materials (such as aluminum and silicon) and non-metallic materials (such as graphite and semiconducting material silicon) have the micro-particle defect in a traditional arc ion plating method, a common magnetron sputtering technology is low in ionization rate and thin film deposition efficiency, the melting point is high, a target material difficult to ionize has using limitations, and high-power pulse magnetron sputtering discharge is unstable in ignition are solved. The multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method comprises the steps that 1, a workpiece is placed on a sample stage inside a vacuum chamber and connected with related equipment; and 2, thin film deposition is conducted, specifically, vacuumizing is conducted till the pressure reaches 10-4 Pa, then, working gas is injected, a film plating power source is turned on, the energy of composite plasma is adjusted through a bias power source, the micro-particle defect is eliminated through a multistage magnetic field filtering device, the transmission efficiency of the arc plasma is ensured, and the arc plasma and twin targets are combined to produce high-ionization-rate multi-component plasma, and a thin film is prepared.

Description

technical field [0001] The invention relates to a composite method of multi-level magnetic field ion plating and twin target high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology can obtain almost all metal ions including carbon ions. At the same time, it has the advantages of high ionization rate, good diffraction, good film-substrate bonding force, good coating quality, high deposition efficiency and easy operation of equipment. Attention is paid to it, and it is one of the physical vapor deposition preparation technologies widely used in industry at present. It can not only be used to prepare metal protective coatings, but also realize the preparation of high-temperature ceramic coatings such as nitrides and carbides through the adjustment of process methods, and it is also used in the field of functional thin films. Arc ion plating can achieve rapid deposition of ...

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the traditional arc ion plating method is easy to produce large particle defects, and the magnetic filter technology causes low arc plasma transmission efficiency, and break through the pure metal with low melting point (such as aluminum) or multi-component alloy materials (such as aluminum-silicon alloy), non-metallic materials (such as graphite) and semiconductor materials (such as silicon) as the limitations of the traditional arc ion plating method, the traditional magnetron sputtering technology Low melting rate and film deposition efficiency, limitations of high melting point target materials, high power pulse magnetron sputtering discharge and ignition instability, low melting point pure metals (such as aluminum) or multi-element alloy materials and non-metallic materials (such as Graphite and semiconductor material silicon, etc.) are used as the target material of twin target high-power pulse magnetron sputtering, and then the arc ion plating method is used to ionize the high-melting point target material to produce continuous and stable plasma with high ionization rate. The straight tube magnetic filtration method eliminates the large particle defects contained in the arc plasma, and at the same time ensures that the arc plasma passes through the filter device with a high transmission efficiency, so that the surface of the workpiece can be continuously and densely prepared with high-quality films under the condition of applying a negative bias voltage. At the same time, it can control the addition of elements in the film, reduce the production cost of using alloy targets, improve the deposition efficiency of the film, reduce the adverse effects of discharge instability and large particle defects on the growth and performance of the film, and propose a multi-level magnetic field ion plating and Combination method of twin target high power pulsed magnetron sputtering

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