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Gas introduction device and substrate processing apparatus using same

A gas introduction device and gas introduction technology are applied in the fields of electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., which can solve the problems of decreased productivity, inability to ensure uniform thickness of film, long deposition time, etc., to ensure that the film Thickness uniformity, secure film deposition rate, effect of shortening feed time

Pending Publication Date: 2022-05-10
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there may be a problem that a film with a uniform thickness cannot be ensured
In addition, the amount of source gas physically adsorbed to the substrate is small and the deposition time is long
As a result, there may be a problem of reduced productivity

Method used

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  • Gas introduction device and substrate processing apparatus using same
  • Gas introduction device and substrate processing apparatus using same
  • Gas introduction device and substrate processing apparatus using same

Examples

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Embodiment Construction

[0024] Embodiments that can specifically achieve the above objects will be described in detail below with reference to the accompanying drawings. These embodiments may be varied in various ways, and may have various forms. In connection therewith, specific embodiments are illustrated in the drawings and described in detail in the description.

[0025] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. It should also be understood that relative terms used below (such as "on" / "above" / "over" and "below" / "below" / "under") Can be construed as merely distinguishing one element from another without necessarily requiring or referring to some physical or logical relationship or order between the elements.

[0026] Terms used in the present disclosure are used to describe specific embodiments only, and do not limit the present disclosure. A singular expression in ...

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Abstract

A gas introduction device according to one embodiment of the present disclosure includes: a gas feeding block disposed above a chamber, the gas feeding block including a plurality of gas channels disposed in the gas feeding block to supply gas to the chamber; a valve assembly coupled with one side surface of the gas feed block, the valve assembly including a plurality of valves for selectively opening / closing at least one of the plurality of gas channels; one end of the gas introduction pipe is coupled to the valve assembly, and the other end of the gas introduction pipe is communicated with the cavity. A buffer space is provided in at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction tube, thereby accumulating gas.

Description

technical field [0001] The present disclosure relates to a gas introduction device and a substrate processing device using the gas introduction device. Background technique [0002] In order to deposit a thin film with a certain thickness on a semiconductor substrate, the thin film manufacturing method used is usually Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etc. using physical collisions (such as sputtering). [0003] Due to the ultrafine design rules of semiconductor devices, thin films with fine patterns are required. The steps in the region where such a thin film is formed become large. For this purpose, atomic layer deposition (ALD), which can very uniformly form fine patterns with an atomic layer thickness while exhibiting excellent step coverage, is increasingly used. [0004] ALD can precisely adjust the film thickness on the substrate surface by suppressing gas-phase reactions while injecting source gas, purge gas, and reaction gas in a ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67C23C16/455
CPCH01L21/67017H01L21/67098C23C16/45544C23C16/45561H01L21/67H01L21/02H01J37/3244C23C16/45525H01L21/0228H01J2237/332
Inventor 河闰圭金起范金鍾植赵一衡黄喆周
Owner JUSUNG ENG
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