Vacuum film-coating method through combined magnetic field and compounding of lining special-shaped pipe and porous baffle

Abstract

The invention provides a vacuum film-coating method through a combined magnetic field and compounding of a lining special-shaped pipe and a porous baffle, and belongs to the technical field of material surface treatment. The vacuum film-coating method is used for solving the problems of pollution of large particles to a film, target using limitation, loss of magnetic filtration arc plasma, instability of high-power pulse magnetron sputtering discharge and the like in arc ion plating. A device adopted by the vacuum film-coating method comprises an arc ion plating target source, a multi-stage magnetic field device, a lining bias-voltage special-shaped pipe and multi-porous baffle combination device, a movable coil device, a twin target high-power pulse magnetron sputtering target source andrelated power supply, a waveform matching device, a grid bias power supply and the like. Film deposition is conducted, specifically, the device is connected, a system is started, when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, working gas is introduced, a film-coating power supply is started, energy of the plasma is adjusted through the grid bias power supply, the combined magnetic field, the lining special-shaped pipe and a porous baffle device eliminate the defects of the large particles and guide transmission of the compound plasma, loss of the plasma in the vacuum chamber is reduced, and preparation process parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method combining a magnetic field and a lined special-shaped tube with a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit ...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube, stepped tube and porous baffle combined device and the combined effect of bias electric field attraction can eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma has a higher The transmission efficiency is eliminated from the multi-level magnetic field through the combination of the lined bias conical tube, the stepped tub

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