Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof

A technology of molybdenum disulfide and thin-film devices, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve problems such as resistance changes, and achieve the effects of high reliability, elimination of dependencies, and simple preparation process
CN104049022AInactive Publication Date: 2014-09-17CHINA UNIV OF PETROLEUM (EAST CHINA)
3 Cites 19 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CHINA UNIV OF PETROLEUM (EAST CHINA)
Publication Date
2014-09-17
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a molybdenum disulfide (MoS2) / silicon (Si) heterogeneous film component with a hydrogen sensitivity effect as well as a preparation method and application thereof. The MoS2 / Si heterogeneous film component comprises a Si substrate and a MoS2 film layer which is deposited on the surface of the Si substrate by a direct current magnetron sputtering technology. According to the preparation method, by depositing the MoS2 film on the surface of the Si substrate, the MoS2 / Si heterogeneous film component having an H2 sensitivity effect is prepared by virtue of H2 adsorption of the MoS2 film and electrical transport amplification action of a semiconductor heterogeneous interface. Test results show that under the condition of pure H2, when impressed voltage is -5V, the electric current of the MoS2 / Si heterogeneous film component is reduced by two orders of magnitude; meanwhile, the heterogeneous film component shows obvious response to H2 concentration change. Compared with an existing semiconductor type H2 sensing component, the MoS2 / Si heterogeneous film component has advantages of having obvious H2 response performance, and being good in repeatability, high in reliability and free of dependence on oxygen atmosphere condition and noble metal.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of nano-semiconductor technology, and relates to semiconductor thin film preparation and device processing technology, in particular to a molybdenum disulfide / silicon heterogeneous thin film device with a hydrogen sensitive effect and its preparation method and application. Background technique

[0002] As a reducing and carrier gas, H 2 Has been widely used in petrochemical, electronics, medical, aviation and other fields. At the same time, H 2 As a new type of efficient and clean energy, it has also attracted widespread attention and a lot of research. However, hydrogen molecules are very small and are prone to leakage during production, transmission and use. When H in the air 2 When the content reaches 5% to 75%, it can explode violently under open flame conditions. Therefore, the rapid and accurate in situ measurement of hydrogen content in air and specific environments has great application value and also ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More