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Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film

A solar cell, copper-zinc-tin-sulfur technology, applied in coatings, circuits, electrical components, etc., can solve the problems of high equipment requirements and cumbersome stack sputtering process, and achieve good repeatability, easy operation, and controllability strong effect

Inactive Publication Date: 2013-06-19
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The magnetron sputtering preparation method of the absorbing layer film of copper-zinc-tin-sulfur solar cells generally adopts multi-target co-sputtering or stacked sputtering. Multi-target co-sputtering requires high equipment and the process of stacked sputtering is cumbersome

Method used

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  • Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film

Examples

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Embodiment 1

[0027] 1) Substrate preparation: Soak the molybdenum-coated soda-lime glass substrate (SLG) in acetone, alcohol, deionized water in sequence, clean it ultrasonically, and dry it with nitrogen gas for later use;

[0028] 2) Preparation of CuZnSn metal precursor thin film: a DC magnetron sputtering system was used, and Cu-Zn-Sn alloy with a size of 50×4mm was used as a target for single-target sputtering, and the vacuum degree was 3.5×10 -4 More than Pa, the initiation argon gas flow rate is 45sccm, the initiation pressure is 1.2Pa, the sputtering power is 30W, the working pressure is 1.0Pa, and the sputtering time is 50min, and the thickness obtained on the surface of the above-mentioned molybdenum-coated soda-lime glass substrate is 600nm uniform and dense CuZnSn metal precursor film;

[0029] 3) Vacuum vulcanization of CuZnSn metal precursor thin film: Put the molybdenum-coated soda-lime glass substrate with CuZnSn metal precursor thin film sputtered on the surface and approp...

Embodiment 2

[0031] Embodiments 2-3: basically the same as Embodiment 1, only the working air pressure is different, the working air pressure of Embodiment 2 is 0.7Pa, and the working air pressure of Embodiment 3 is 0.3Pa.

Embodiment 4

[0032] Examples 4-5: are basically the same as Example 1, only the sputtering power is different, the sputtering power of Example 4 is 20W, and the sputtering power of Example 5 is 50W.

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Abstract

The invention discloses a method of preparing a copper-zinc tin-sulphur solar cell absorbed layer thin film. The method of preparing the copper-zinc tin-sulphur solar cell absorbed layer thin film comprises the following steps: 1) a substrate can be soaked in acetonum, ethyl alcohol and deionized water in sequence, the substrate can be cleaned ultrasonically and then the substrate can be blow-dried to be reserved; 2) a direct current magnetron sputtering system can be used and a copper (Cu)-zinc (Zn)-stannum (Sn) alloy can be used as target materials to be in signal-target sputtering. Vacuum degree is above 3.5*10-4 pascals, sputtering power is 10-50 watts and working air pressure is 0.2-1.2 pascals so as to obtain a Cu-Zn-Sn precursor thin film; 3) under the condition that argon can be entered into a vacuum and the argon flow is in 35-50 standard-state cubic centimeter per minute, the temperature of the Cu-Zn-Sn precursor thin film and powdered sulfur can be respectively raised to 200-250 DEG C. The powdered sulfur can be kept under 200-250 DEGC in 5.5-6.5 hours and then the powdered sulfur can be cooled naturally; after the substrate is kept under the temperature of 200-250 DEGC in 10-15 minutes, the temperature can be increased to 500-600 DEGC to be in vacuum vulcanization for 30-40 minutes. After the substrate is naturally cooled, the copper-zinc tin-sulphur solar cell absorbed layer thin film can be obtained. The method of preparing the copper-zinc tin-sulphur solar cell absorbed layer thin film has the advantages of being easy to operate, strong in controllability, good in repeatability and capable of preparing high quality copper-zinc tin-sulphur solar cell absorbed layer thin film in large areas. The method is an environmental friendly preparation method.

Description

technical field [0001] The invention relates to a method for preparing a thin film of an absorbing layer of a solar cell, in particular to a method for preparing a thin film of an absorbing layer of a copper-zinc-tin-sulfur solar cell. Background technique [0002] Thin-film solar cells have become one of the promising photovoltaic technologies due to their advantages such as less consumables, low price, easy large-scale production, deposition on flexible substrates, and easy building-integrated applications. The direct narrow bandgap semiconductor material with 1.4-1.6eV is considered to be an ideal solar cell absorber thin film material, and the current commercial non-silicon-based thin film solar cells are mainly based on CdTe or Cu(In,Ga)Se 2 (CIGS for short), but the toxicity of Cd and the scarcity of In limit the application and development of these materials in the field of solar cells. [0003] Copper zinc tin sulfur (i.e. Cu 2 ZnSnS 4 , referred to as CZTS) semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/35
CPCY02P70/50
Inventor 周珊珊谭瑞琴宋伟杰许炜沈祥戴世勋徐铁峰聂秋华
Owner NINGBO UNIV
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