Porous structure organic field effect transistor photosensitive memory and preparation method thereof

Abstract

The invention relates to a porous structure organic field effect transistor photosensitive memory and a preparation method thereof, and belongs to the field of semiconductor industry memory technologies and biofilm technologies. The memory comprises source and drain electrodes, an organic photosensitive semiconductor, a porous polymer film layer and a gate insulating layer which are arranged from top to bottom in sequence. The polymer film layer of a porous structure is arranged between the organic photosensitive semiconductor and the gate insulating layer. The source and drain electrodes and the organic photosensitive semiconductor are totally or partially of a porous structure which grows periodically. According to the invention, a spin-coating method is adopted to prepare the polymer film layer of the porous structure on a gate insulating layer substrate, and the polymer film layer is used as a porous template layer, the organic photosensitive semiconductor and the metal source and drain electrodes are induced to form the periodic porous growing features. The storage performance and the photosensitive performance of the device are improved by simple process means, the storage capacity, the switching speed and the light response capability are substantially improved, the preparation cost is lowered, and the popularization and the application are facilitated.

Description

Technical field [0001] The invention belongs to the field of memory technology and light detection technology in the semiconductor industry, and specifically relates to an organic field effect transistor photosensitive memory and a preparation method thereof. Background technique [0002] As the basic components in electronic circuits, organic field-effect transistors have the characteristics of wide material sources, softness and simple processing technology, and can be applied to large-area printing processes, which are very suitable for the development direction of the next generation of wearable electronics industry. At the same time, the structure of the organic field effect transistor determines that it has rich functional applications, such as light emitting, storage, sensing, switching, etc., so it has a wide range of application prospects in the field of information electronics. [0003] As a multifunctional integrated device, Organic Photosensitive Field Effect Transistor...

AI Technical Summary

Problems solved by technology

However, there are also disadvantages such as high cost of new material development, long cycle and complicated process, and relatively high equipment cost.

[0004] Judging from the overall research progress at home and abroad, OPTM still faces the following challenges: (1) The current research is still mainly focused on the storage phenomenon and storage behavior of OPTM, and there is a lack of research on the joint enhancement effect of photoresponse and storage characteristics ; (2) The operating voltage is too high (>100V), the light response speed is too slow (incident light>1s), the storage density is low (difficult to achieve multi-level storage), the light-dark current ratio is low (5 s); (3) The light-induced electrical storage mechanism needs to be further elucidated and systematically explored

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