5results about How to "Reduced wiring area" patented technology

The utility model provides a grid driving control circuit, a display driving chip, a display panel and a display device. The circuit comprises a plurality of gate drive control units, each gate drive control unit comprises a decoding module, an electric balance control module, an electric balance function module and a signal output module, and the decoding module is used for outputting a decoding output signal according to a digital control signal; the electric balance control module is used for generating a function control signal according to the digital control signal and the electric balance starting signal; the electric balance function module is used for opening or closing an electric balance function according to the function control signal, and controlling the signal output module to increase an intermediate voltage between the lowest voltage and the highest voltage of the gate driving signal under the condition that the electric balance function is opened; and the signal output module is used for outputting a gate driving signal according to the decoding output signal under the condition that the electric balance function is closed, so that the area of a display driving chip is reduced.

This invention discloses a flexible temperature and stress integrated sensor array based on shielded strips and its fabrication method, relating to the field of microelectronics technology. The array includes: a first conductive layer comprising multiple first conductive lines arranged parallel to a first direction; a second conductive layer comprising multiple second conductive lines arranged parallel to a second direction; the first and second conductive lines define multiple regions of the array, each region comprising four diagonally arranged sub-regions, each region housing two stress sensors and one temperature sensor; and a shielded strip layer located between the first and second conductive layers, comprising multiple shielded strips arranged parallel to the second direction, with the second conductive lines located on the upper surface of the shielded strips; wherein the first and second directions intersect. This invention significantly reduces the area ratio of conductive lines in traditional layouts, greatly improving the effective utilization rate of the sensing area.

The application discloses a storage structure and a memory, wherein the storage structure comprises: a first storage chip and a second storage chip; the first storage chip is stacked on one side of the second storage chip, and the first storage chip and the second storage chip are connected in three dimensions; the first storage chip is provided with a plurality of pins for being connected to a preset circuit board, a signal transmission line of the first storage chip is connected with the pins, and a signal transmission line of the second storage chip is connected with the pins through the first storage chip; the storage structure is configured to read or write the first storage chip through the signal transmission line of the first storage chip after receiving a preset first chip select signal; and the storage structure is further configured to read or write the second storage chip through the signal transmission line of the second storage chip after receiving a preset second chip select signal. In the process of realizing storage capacity expansion, the application avoids increasing the wiring resources of the PCB board and reduces the packaging cost.

The invention provides a semiconductor device, a manufacturing method thereof and a memory device. The semiconductor device comprises a word line; the word lines extend along a first direction; a bit line; the bit lines extend along a second direction; the second direction intersects with the first direction; a first conductive connection structure; the first conductive connection structure is located between the first surface and the word line; one end of the first conductive connection structure is connected with the word line; the first surface and the second surface are two opposite surfaces of the semiconductor device along the first direction; a second conductive connection structure; the second conductive connection structure is located between the second surface and the bit line; one end of the second conductive connection structure is connected with the bit line.

The utility model relates to the technical field of car light circuit, specifically disclose a miniaturized integrated car light BUCK circuit, including BUCK IC integrated chip, BUCK IC integrated chip includes VIN pin, EN pin, VOUT pin, FB pin, VCC pin and BST pin, has the first capacitor group and second capacitor group on VIN pin, the first resistance formation POWER IN is connected on EN pin, the voltage -division resistance for voltage division is provided with on FB pin, VOUT pin is connected with third capacitor group, the utility model discloses a purpose at to solve the traditional car light circuit reliability problem through car light BUCK circuit, help system improves stability.