Preparation method of graphene film

A graphene film and graphene technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as difficult human control, affecting film quality, inconsistent graphene growth mode, etc., to reduce the impact , Improve the effect of quality and efficiency

Inactive Publication Date: 2014-04-02
上海中电振华晶体技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the previous process of growing graphene by CVD method, the deposition of carbon atoms to the substrate surface is carried out spontaneously through the diffusion process, which is difficult to control artificially, so that the carbon carried by other ions also participates in the reaction, resulting in inconsistent growth modes of graphene. affect film quality

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  • Preparation method of graphene film

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Embodiment 1

[0043] see figure 1 , the preparation method of the present invention utilizes a preparation equipment to prepare graphene thin film 4, and described preparation equipment comprises plasma chamber 12, and plasma chamber 12 is provided with plasma injection port 2, residual gas outlet 10, and plasma injection port 2 is provided with plasma The generator 1 and the carbon source 9 enter the plasma chamber 12 through the plasma injection port 2 after being processed by the plasma generator 1 , and a screening magnetic field 11 is formed in the plasma chamber 12 .

[0044] The plasma chamber 12 is provided with a baffle 3 , specifically, in this embodiment, the baffle 3 is placed at the bottom of the plasma chamber 12 . The plasma chamber 12 is also provided with a deposition chamber 8 outside, and a movable heating plate 7 is arranged in the deposition chamber 8, and a substrate (ie, a silicon substrate) 6 is arranged on the movable heating plate 7; above the silicon substrate 6, ...

Embodiment 2

[0055] This embodiment adopts the same method as Embodiment 1, and the difference from Embodiment 1 is that the screening magnetic field strength is 20 Oz, and the movement radius of carbon ions is 3.1 cm at this time. Adjust the distance between the slit on the baffle and the plasma entrance to 3.6cm, carbon ions can enter the accelerating electric field through the upper plate of the accelerating electric field, while other negative ions cannot enter the accelerating electric field.

Embodiment 3

[0057] This embodiment adopts the same method as Embodiment 1, and the difference from Embodiment 1 is that the screening magnetic field strength is 5 Oz, and the movement radius of carbon ions is 12.4 cm at this time. Adjust the distance between the slit on the baffle and the plasma entrance to 12.4cm, carbon ions can enter the accelerating electric field through the upper plate of the accelerating electric field, while other negative ions cannot enter the accelerating electric field.

[0058] In summary, the preparation method of the graphene film proposed by the present invention enhances the deposition of carbon ions to the surface of the substrate through the electromagnetic field, and can effectively separate the carbon ions from other ions by controlling the screening magnetic field at the same time, reducing the impact of other ions on the graphene film. quality impact. By controlling the accelerating electric field, the speed at which carbon ions bombard the substrate...

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Abstract

The invention discloses a preparation method of a graphene film. The preparation method comprises the following steps: providing a graphene growth substrate, and placing the substrate in a high-temperature area formed by heating; applying accelerating electric fields and screening magnetic fields vertical to the substrate and along a surface normal direction of the graphene film needing deposition along the substrate in sequence, and taking the substrate as a positive electrode of the accelerating electric fields; heating the substrate, a screening magnetic field area and an accelerating electric field area; ventilating a carbon-containing gas as a carbon source, ionizing the carbon-containing gas into plasmas before ventilating into the screening magnetic field area, and enabling the plasmas to enter the screening magnetic field area in a jet-flow form, wherein charged ions in the jet-flow have different movement radiuses under action of different screening magnetic fields according to difference of charged quantity; and enabling the screened carbon ions to enter the accelerating electric fields, accelerating the carbon ions to a certain speed under action of the accelerating electric fields to collide the substrate surface, so that graphene growth is realized. The preparation method disclosed by the invention can greatly improve production efficiency of the graphene and can obtain high-quality large-dimension graphene by virtue of continuous growth.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and relates to a thin film preparation method, in particular to a graphene thin film preparation method. Background technique [0002] Graphene is a planar film composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice, a two-dimensional material with a thickness of only one carbon atom. The chemical vapor deposition (CVD) method is a new method of preparing graphene developed in recent years. This method uses carbon-containing compounds such as methane as a carbon source, and grows graphene through its pyrolysis on the surface of the substrate. It has high product quality, The advantages of large growth area have gradually become the main method for preparing high-quality graphene. [0003] In terms of carbon sources, the carbon sources for growing graphene are mainly hydrocarbon gases, such as methane (CH4), ethylene (C2H4), acetylene (C2H2), etc....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23C16/455C23C16/26
Inventor 颜士斌马远维塔利·塔塔琴科宗志远牛沈军
Owner 上海中电振华晶体技术有限公司
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