Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Simple preparation method of carbon self doped carbon nitride nano film electrode

A nano-film and thin-film electrode technology, applied in the field of photoelectrochemical hydrogen production semiconductor electrodes, can solve the problems of limiting the application of carbon nitride materials, lack of methods, etc., to solve the problems of current transfer, simple and easy preparation methods, and improved activity and stability. Effect

Active Publication Date: 2017-06-13
SHAANXI NORMAL UNIV
View PDF2 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of controllable and in situ growth of carbon nitride on conductive substrates is relatively lacking, and there are still significant challenges in the preparation of large-area, uniform, non-porous carbon nitride films, which limits the application of carbon nitride materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Simple preparation method of carbon self doped carbon nitride nano film electrode
  • Simple preparation method of carbon self doped carbon nitride nano film electrode
  • Simple preparation method of carbon self doped carbon nitride nano film electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1. Preparation of self-sensitizing carbon nitride film precursor solution

[0035]Add 166mg (0.9mmol) of cyanuric chloride and 5.8mg (0.045mmol) of cyanuric acid into 15mL of acetonitrile, stir it magnetically to make it fully dissolve (300 rpm), and obtain a self-sensitized carbon nitride film The precursor solution, wherein the concentration of cyanuric chloride is 0.06mol / L, and the concentration of cyanuric acid is 0.003mol / L.

[0036] 2. Preparation of self-sensitizing carbon nitride thin film electrodes

[0037] After the FTO conductive glass (1.0cm×2.5cm) was ultrasonically washed with acetone, ethanol and distilled water, respectively, it was washed with N 2 Purge and dry, then put it into a mixture of ammonia water with a mass fraction of 25% to 28%, hydrogen peroxide with a mass fraction of 30%, and a water volume ratio of 1:1:5, soak at 60°C for 3 hours, and then Sonicated and washed with N 2 Purge and dry to obtain surface hydroxylated FTO conductive glas...

Embodiment 2

[0042] 1. Preparation of self-sensitizing carbon nitride film precursor solution

[0043] This step is the same as Step 1 of Example 1.

[0044] 2. Preparation of self-sensitizing carbon nitride thin film electrodes

[0045] After the FTO conductive glass (1.0cm×2.5cm) was ultrasonically washed with acetone, ethanol and distilled water, respectively, it was washed with N 2 Purge and dry, then use metal titanium as the target material, grow a layer of metal titanium film with a thickness of about 100nm on the FTO conductive glass by sputtering, and then calcinate the FTO conductive glass with metal titanium film at 500°C in the air atmosphere 2 hours, get TiO 2 / FTO substrate. Add 15 mL of the self-sensitizing carbon nitride thin film precursor solution into a polytetrafluoroethylene autoclave, and place two pieces of TiO 2 / FTO substrate is suspended in the precursor solution of self-sensitized carbon nitride film, then the autoclave is sealed and placed in an oven, the te...

Embodiment 3

[0050] 1. Preparation of self-sensitizing carbon nitride film precursor solution

[0051] This step is the same as Step 1 of Example 1.

[0052] 2. Preparation of self-sensitizing carbon nitride thin film electrodes

[0053] This step is the same as Step 2 of Example 1.

[0054] 3. Preparation of carbon self-doped carbon nitride nanofilm electrodes

[0055] In this step, the temperature is raised to 400°C at a heating rate of 5°C / min, and the constant temperature is calcined for 2 hours to grow a carbon self-doped carbon nitride film on the FTO conductive glass. The other steps are the same as step 3 of Example 1, and the carbon self-doped Doped carbon nitride nano film electrode, wherein the thickness of carbon self-doped carbon nitride nano film is 185nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Photocurrent densityaaaaaaaaaa
Current densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a simple preparation method of carbon self doped carbon nitride nano film electrode, the method is as follows: cyanuric acid and cyanuric chloride are used as precursors, acetonitrile is used as a solvent, a simple solvothermal method is used for controllable growth of different thickness of films comprising self sensitization carbon nitride nanoparticles on surface-hydroxylated ordinary glass, quartz glass, FTO conductive glass or TiO2 / FTO and other substrates, then post heat treatment is used for carbonization of self sensitization carbon nitride to obtain different thickness and density of carbon self doped carbon nitride nano films. The preparation process is simple, by changing of solvothermal reaction time and post heat treatment temperature and the like, the thickness and density of the carbon self doped carbon nitride nano films can be controlled, the area of the film is large, the film is close contact with the substrate, by carbon doping, conductivity of carbon nitride is enhanced, and excellent photocurrent response can be showed when in use in photoelectric water decomposition.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electrodes for photoelectrochemical hydrogen production, and in particular relates to a simple preparation method of carbon self-doped carbon nitride electrodes. Background technique [0002] Photocatalytic and photocatalytic water splitting, which convert sunlight into chemical energy, has attracted much attention as the most promising solution to the sustainable energy challenge. The most commonly used electrode materials are inorganic semiconductors, such as TiO 2 , ZnO, BiVO 4 , FeOOH, NiOOH and hematite, etc. Metal-free conjugated polymer semiconductor materials such as graphitic carbon nitride (g-C 3 N 4 ) and its derivatives, although their photocatalytic efficiency is lower than that of inorganic semiconductor materials (TiO 2 , CdS, BiVO 4 etc.), but because of its many advantages, such as appropriate energy band, non-toxic, cheap and easy to obtain, etc., it has also been reg...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01M14/00H01G9/20H01G9/00
CPCH01G9/0029H01G9/20H01M14/005
Inventor 顾泉刘建妮贾巧慧高子伟张伟强
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com