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High efficiency N-type double-faced solar cell and preparation method thereof

A double-sided solar cell, N-type technology, which is applied in the field of solar cells to achieve the effects of high efficiency, easy operation, and increased open circuit voltage

Active Publication Date: 2015-06-24
常州顺风太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another object of the present invention is to provide the above-mentioned high-efficiency N-type double-sided solar cell preparation method, the preparation process is simple and easy to control, and effectively solves the problem of edge interaction caused by front and back diffusion

Method used

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  • High efficiency N-type double-faced solar cell and preparation method thereof

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Embodiment 1

[0044] The preparation method of the above-mentioned N-type double-sided solar cell comprises the following steps:

[0045] (1) Select an N-type single crystal raw silicon wafer with a resistivity of 1-12Ω·cm, dilute it with a mixture of hydrogen peroxide and ammonia water, and then treat it at 60-80°C for 3-10min to remove the mechanical properties on the surface of the silicon wafer. damage layer. After the above-mentioned treatment, the silicon wafer is corroded with potassium hydroxide solution and texturing buffer with a concentration of 1.6-2.0% and a temperature of 70-90 ° C. The time is controlled at 20-30 minutes, and then washed with diluent hydrofluoric acid. Finally, a pyramid-shaped suede structure is obtained.

[0046] (2) On the front side of the double-sided textured silicon wafer, an n+ diffusion layer is formed by doping, and the diffusion method is boron tribromide (BBr 3 ) source tube diffusion, or ion implantation method, or spray boron source on-line di...

Embodiment 2

[0056] The preparation method of the above-mentioned N-type double-sided solar cell comprises the following steps:

[0057] (1) Select an N-type single crystal raw silicon wafer with a resistivity of 1-12Ω·cm, dilute it with a mixture of hydrogen peroxide and ammonia water, and then treat it at 60-80°C for 3-10min to remove the mechanical properties on the surface of the silicon wafer. damage layer. After the above-mentioned treatment, the silicon wafer is corroded with potassium hydroxide solution and texturing buffer with a concentration of 1.6-2.0% and a temperature of 70-90 ° C. The time is controlled at 20-30 minutes, and then washed with diluent hydrofluoric acid. Finally, a pyramid-shaped suede structure is obtained.

[0058] (2) On the front side of the double-sided textured silicon wafer, an n+ diffusion layer is formed by doping, and the diffusion method is boron tribromide (BBr 3 ) source tube diffusion, or ion implantation method, or spray boron source on-line di...

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Abstract

The invention relates to a high efficiency N-type double-faced solar cell and a preparation method thereof. The structure of the solar cell comprises an N-type silicon slice substrate, a front side boron doping layer, a back side phosphor doping layer, double-faced silicon dioxide passivation layers, doubled-faced silicon nitride antireflection layers and double-faced electrodes. The invention further discloses a preparation method for the solar cell, the preparation method particularly comprises the first step that double-faced texturization is conducted; the second step that front side boron diffusion is conducted; the third step that front side film masking is conducted; the fourth step that back side washing is conducted; the fifth step that back side phosphorus diffusion is conducted; the sixth step that a mask film is removed; the seventh step that double-faced passivation is conducted; the eighth step that double-faced film coating is conducted; the ninth step that the front side electrodes and the back side electrodes are formed; the tenth step that laser edge carving is conducted. According to the high efficiency N-type double-faced solar cell and the preparation method thereof, knots are formed on both the front side and the back side of the N-type silicon slice, the front side and the back side both have high photoelectric converting rates, the output power of an assembly of the high efficiency N-type double-faced solar cell is 20% higher than the output power of a common solar cell, and meanwhile the high efficiency N-type double-faced solar cell is applicable to large-scale industrial production due to the fact that the preparation technology is simple and practical.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a high-efficiency N-type double-sided solar cell and a preparation method thereof. Background technique [0002] With the continuous development of photovoltaic technology, photovoltaic cells with high efficiency, high stability and low cost will become the mainstream products pursued by the photovoltaic market. N-type double-sided solar cells have the advantages of high conversion efficiency, low light-induced attenuation, good stability, high cost performance, and double-sided power generation, and are receiving more and more attention in the photovoltaic market. [0003] Because of the photoelectric conversion effect on both the front and the back of the double-sided solar cell, the total output power is far superior to that of conventional solar cells. At present, there are some N-type double-sided solar cells on the market, but the rear conversion efficiency is relative...

Claims

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Application Information

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IPC IPC(8): H01L31/0687H01L31/0352H01L31/0216H01L31/18
CPCY02E10/544Y02P70/50
Inventor 瞿辉徐春曹玉甲张伟波
Owner 常州顺风太阳能科技有限公司
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