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Preparation method for high-performance n-type bismuth telluride base thermoelectricity power generation material

A bismuth telluride-based, thermoelectric power generation technology, which is applied in the manufacture/processing of thermoelectric devices, etc., can solve the problem that the performance of n-type bismuth telluride-based materials is not significantly improved, cannot be mass-produced stably in industrialized production, and reduces lattice thermal conductivity. rate and other issues, to achieve long-term stable performance, uniform performance, and simple equipment.

Active Publication Date: 2011-06-08
江西纳米克热电电子股份有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the improvement of bismuth telluride-based thermoelectric materials is limited to the nanostructure to greatly reduce the thermal conductivity of the lattice, increase the Seebeck coefficient, and then improve the thermal conductivity at a certain temperature. ZT value, rather than a certain operating temperature range ZT value or power generation per unit of material
At the same time, the performance of n-type bismuth telluride-based materials is not significantly improved by nanometerization, the preparation cost of nanometerization is expensive, and subsequent hot pressing or SPS sintering is required to form a block. It cannot be mass-produced in a stable manner and has been stuck in the scientific research stage.

Method used

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  • Preparation method for high-performance n-type bismuth telluride base thermoelectricity power generation material
  • Preparation method for high-performance n-type bismuth telluride base thermoelectricity power generation material
  • Preparation method for high-performance n-type bismuth telluride base thermoelectricity power generation material

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Embodiment 1

[0029] see figure 2 , a method for preparing a high-performance n-type bismuth telluride-based thermoelectric power generation material, the preparation steps are as follows:

[0030] (1) Use a copper wire brush or a blade to remove the oxide layer on the surface of the tellurium block, bismuth block and selenium block with a commercial purity of 4N, and then pulverize them with a pulverizer;

[0031] (2) Seal one end of the glass tube with an inner diameter of 32 mm with a propane lamp and fully anneal it for 2 minutes. After cleaning with deionized water, dehydrate with alcohol and dry for later use;

[0032] (3) According to the stoichiometric ratio Bi 2 (Te 1-x Se x ) 3 +ywt%TeI 4 , x=0.07, y=0.15, take a total of 1.70Kg of Bi, Se and Te pulverization, add 0.15wt% TeI 4 placed in a dried glass tube;

[0033] (4) After the vacuum degree of the glass tube containing the material is evacuated to 4Pa, seal it at a place 3cm away from the material plane;

[0034] (5) ...

Embodiment 2

[0039] A method for preparing a high-performance n-type bismuth telluride-based thermoelectric power generation material, the preparation steps of which are as follows:

[0040] (1) Use a copper wire brush or a blade to remove the oxide layer on the surface of the tellurium block, bismuth block and selenium block with a commercial purity of 4N, and then pulverize them with a pulverizer;

[0041] (2) Seal one end of the glass tube with an inner diameter of 35mm with a gas lamp and fully anneal for ≥ 3 minutes. The edge of the other end is melted and smoothed. Rinse off the attachments in the glass tube with tap water, and then use glass cleaner, tap water, deionized After cleaning with water, dehydrate with alcohol and dry for later use;

[0042] (3) According to the stoichiometric ratio Bi 2 (Te 1-x Se x ) 3 +ywt%TeI 4 , x=0.06, y=0.14, a total of 1.9Kg of Bi, Se and Te pulverized products, adding 0.14wt% TeI 4 placed in a dried glass tube;

[0043] (4) After the vacuum...

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Abstract

The invention discloses a preparation method for a high-performance n-type bismuth telluride base thermoelectricity power generation material. High-purity tellurium blocks, bismuth blocks and selenium blocks which are industrially produced on a large batch serve as raw materials; after the raw materials are subjected to oxide layer removal and smashing, a proper quantity of dopant is added; the mixture is put into a processed glass tube after being weighed at a certain ratio; and an n-type bismuth telluride base thermoelectricity semiconductor crystal bar is obtained by packaging, smelting and zone-melting growth. At the temperature of 30-300 DEG C, the average ZT value is 0.75, and the average power factor is 4.5*10<-3>W. m. K<-2>. The adopted raw materials are cheap and easy to get, have the advantages of no toxin, environment protection, simple equipment process, low energy consumption and large yield and can be industrially produced on a large scale.

Description

technical field [0001] The invention relates to the manufacture of new materials, and belongs to the field of new energy materials, in particular to a preparation method of a high-performance n-type bismuth telluride-based thermoelectric power generation material. Background technique [0002] New energy materials and technologies are one of the indispensable important material and technological foundations for the sustainable development of mankind in the 21st century. Thermoelectric materials are a new type of environmentally friendly new energy materials, which are more and more widely used in thermoelectric cooling and thermoelectric power generation. Due to the unique advantages of thermoelectric power generation in the recovery and utilization of low-temperature waste heat, it will become the main development direction of the thermoelectric industry in the future. Therefore, a high-performance n-type bismuth telluride-based thermoelectric material is developed to meet...

Claims

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Application Information

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IPC IPC(8): H01L35/34
Inventor 郑俊辉郑艳丽陈果张卫华
Owner 江西纳米克热电电子股份有限公司
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