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n-type Mg-Sb based room temperature thermoelectric material and preparation method thereof

A thermoelectric material and technology of electrical materials, which are applied in the field of n-type Mg-Sb-based room temperature thermoelectric materials and their preparation, can solve the problem of limiting the service temperature range and application fields of materials, thermoelectric figure of merit and mechanical properties are not ideal, limiting thermoelectricity Device diversity and other issues, to achieve the effect of low cost, strong controllability and high use value

Active Publication Date: 2018-09-14
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The current commercial room temperature n-type thermoelectric material is bismuth telluride-based material, but its poor mechanical properties often limit the diversity of thermoelectric devices, and its fracture toughness is between 0.8 and 1.3 MPa m 1 / 2 between
[0003] At present, many scholars have conducted research on the above problems, such as using Mg-Sb-based Zintl compounds as new thermoelectric materials, but the thermoelectric figure of merit and mechanical properties at room temperature are not very ideal, which limits the service temperature range and application fields of this material

Method used

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  • n-type Mg-Sb based room temperature thermoelectric material and preparation method thereof

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preparation example Construction

[0030] The present invention also provides a preparation method of the above n-type Mg-Sb based room temperature thermoelectric material, comprising the following steps:

[0031] S1 according to the general chemical formula Mg3+δ mn x Sb 2-y-z Bi y A z Select a single material with a purity ≥ 99% as a raw material, weigh the ingredients in an argon atmosphere with an oxygen content of less than 1ppm, and then place them in a planetary ball mill, and add a certain amount of stainless steel balls to the ball mill to utilize the stainless steel in the ball mill. The impact energy of the ball makes the above raw materials pulverized and mixed, and the powder Mg is initially synthesized. 3+δ mn x Sb 2-y-z Bi y A z Mutually.

[0032] In this step, the stainless steel balls and raw materials added to the ball mill are protected by argon gas when they are rotating in the ball mill, so as to prevent the powder from oxidation.

[0033] In order to further change the grain size,...

Embodiment 1

[0042] Prepare as follows:

[0043] S1 selects flaky Mg (purity 99.8%), granular Sb (purity 99.999%), Bi (purity 99.999%), Te (purity 99.999%), powdery Mn (purity 99.95%) as raw materials, according to the general formula Mg 3+δ mn x Sb 2-y-z Bi y Te z The stoichiometric ratio (where δ=-0.1, x=0.1, y=0.5, z=0.01, that is, the general chemical formula is Mg 2.9 mn 0.1 Sb 1.49 Bi 0.5 Te 0.01 ), weigh the ingredients in a vacuum drying oven with an argon atmosphere with an oxygen content of less than 1ppm, and put stainless steel balls with a diameter of 6mm and 20mm into a planetary ball mill at a ratio of 10:1, and pass through argon Gas protection to prevent powder oxidation, the ball to material weight ratio is 20:1. The operating speed of the planetary ball mill is 500r / min, and the ball milling time is 7.5h.

[0044] S2 Take the powder obtained in the above steps out of a vacuum drying oven with an argon atmosphere with an oxygen content of less than 0.1ppm, weigh...

Embodiment 2

[0053] Prepare as follows:

[0054] S1 uses flake Mg (purity 99.8%), granular Sb (purity 99.999%), Bi (purity 99.999%), Te (purity 99.999%), powdered Mn (purity 99.95%) as raw materials, according to Mg 3+δ mn x Sb 2-y-z Bi y Te z Stoichiometric ratio (δ=0.1x=0.2, y=0.3, z=0.05, that is, the general chemical formula is Mg 3.1 mn 0.2 Sb 1.65 Bi 0.3 Te 0.05 ), weigh the ingredients in an argon atmosphere vacuum drying oven with an oxygen content of less than 1ppm, and put stainless steel balls with a diameter of 6mm and 20mm into the ball mill according to the ratio of 10:2, and pass through the argon protection , to prevent powder oxidation, the ball to material weight ratio is 15:1. The running speed of the ball mill is 400r / min, and the ball milling time is 10h.

[0055] S2 Take out the powder obtained in the above steps in a vacuum drying oven with an argon atmosphere with an oxygen content of less than 0.1ppm, weigh them separately and put them in figure 1 In the...

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Abstract

The invention provides a n- type Mg-Sb based room temperature thermoelectric material. A chemical general formula of the material is Mg3+DeltaMnxSb2-y-zBiyAz, wherein A represents oxygen family elements such as S, Se or Te, Delta is greater than or equal to -0.2 and is less than or equal to 0.3, x, y and z represent atomic ratios, x is 0.001-0.4, y is 0-1.0 and z is 0-0.2. The preparation method comprises the steps of selecting single elements with purity greater than or equal to 99% as raw materials according to the chemical general formula, proportioning and weighing the raw materials separately in an argon atmosphere, then putting the raw materials in a ball milling machine, adding stainless steel balls into the ball milling machine, and obtaining powder after the ball milling machine rotates at high speed; weighing the powder separately and then putting the powder in a graphite mold, then putting the mold in a high-temperature furnace, vacuumizing, sintering when the total air pressure is less than 4Pa, then cooling to room temperature after the sintering is ended. The thermoelectric material provided by the invention has higher room temperature thermoelectric figure of merit and better mechanical performance than traditional n-type bismuth telluride, and is low-cost; and the preparation method is easy to operate, is lower in cost, and has high controllability and repeatability.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to an n-type Mg-Sb-based room temperature thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials, as the key materials of power generation technology using waste heat and solar energy as heat source, have been highly concerned by countries all over the world. Excellent thermoelectric materials usually have good electrical conductivity and poor thermal conductivity. Thermoelectric materials can generally be divided into n-type and p-type. Multiple pairs of p-type and n-type thermoelectric materials can be integrated to form thermoelectric devices, which are used to directly realize the mutual conversion between electrical energy and thermal energy. The energy conversion efficiency of thermoelectric devices mainly depends on the thermoelectric figure of merit (ZT) of thermoelectric materials. How ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C23/00C22C1/05H01L35/16H01L35/18H01L35/34H10N10/01H10N10/852H10N10/853
CPCC22C1/05C22C23/00H10N10/853H10N10/852H10N10/01C22C1/0408B22F9/04B22F2009/041B22F2999/00C22C12/00B22F2009/043B22F3/10
Inventor 刘玮书舒瑞朱永滨冯世达张双猛刘勇
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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