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Method for fast manufacturing n-type bismuth telluride based high-performance thermoelectric materials

A thermoelectric material, bismuth telluride technology, applied in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of restricting large-scale production of materials, difficult to precisely control the composition, and expensive equipment, etc., to achieve The effect of short preparation time, excellent thermoelectric performance, and uniform distribution of components

Active Publication Date: 2014-07-16
武汉新赛尔科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are complex in process, long in preparation period, expensive in use of equipment, and difficult to precisely control the composition, which seriously restricts the large-scale production of materials. Therefore, a new high-performance bismuth telluride that can precisely control the composition of the material, has a short preparation period, and is convenient for industrial production has been developed. The preparation technology of bulk thermoelectric materials is an important topic for its research

Method used

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  • Method for fast manufacturing n-type bismuth telluride based high-performance thermoelectric materials
  • Method for fast manufacturing n-type bismuth telluride based high-performance thermoelectric materials
  • Method for fast manufacturing n-type bismuth telluride based high-performance thermoelectric materials

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Embodiment 1

[0042] A method for ultra-fast preparation of n-type bismuth telluride-based high-performance thermoelectric materials, which comprises the following steps:

[0043] 1) With Bi powder, Te powder and Se powder as raw materials, the molar ratio of Bi powder, Te powder and Se powder is 2:2.7:0.3 to weigh, and the total amount of weighing is 25 g. After the raw materials are mixed evenly, put them into a steel mold, and use a pressure of 10 MPa on a tablet press to form a cylindrical block of f16 mm;

[0044] 2) The cylindrical block is vacuum-sealed in a quartz glass tube (the inner diameter of the quartz glass tube is 17 mm, the outer diameter is 20 mm), and the bottom end of the quartz glass tube is heated on a heat source at 500 °C to trigger the self-propagating reaction When the heating is stopped, the reaction spreads from the bottom to the top in the form of a combustion wave. After the self-propagating reaction is completed, the single-phase Bi is naturally cooled. 2 Te ...

Embodiment 2

[0052] A method for ultrafast preparation of n-type bismuth telluride-based high-performance thermoelectric materials, the steps of which are as follows:

[0053] (1) Use Bi powder, Te powder and Se powder as raw materials, and weigh according to the molar ratio of Bi powder, Te powder and Se powder as 2:2.7:0.3, and the total weight is 25 g. After the raw materials are mixed evenly, put them into a steel mold, and use a pressure of 10 MPa on a tablet press to form a cylindrical block of f16 mm;

[0054] (2) Vacuum-seal the cylindrical block in a quartz glass tube (the inner diameter of the quartz glass tube is 17 mm, and the outer diameter is 20 mm), and place the bottom end of the quartz glass tube in a constant temperature furnace at a temperature of 500 °C. Take it out after 3 min to get single-phase Bi 2 Te 2.7 Se 0.3 compound.

[0055] Figure 8 The XRD spectrum of the product that is the present embodiment obtains, as can be seen from the figure, the product obtain...

Embodiment 3

[0057] A method for ultrafast preparation of n-type bismuth telluride-based high-performance thermoelectric materials, the steps of which are as follows:

[0058] (1) Use Bi powder, Te powder and Se powder as raw materials, and weigh according to the molar ratio of Bi powder, Te powder and Se powder as 2:2:1, and the total weight is 25 g. After the raw materials are mixed evenly, put them into a steel mold, and use a pressure of 10 MPa on a tablet press to form a cylindrical block of f16 mm;

[0059] (2) Vacuum-seal the cylindrical block in a quartz glass tube (the inner diameter of the quartz glass tube is 17 mm, and the outer diameter is 20 mm), and heat the bottom end of the quartz glass tube on a heat source at 500 °C until self-propagating After the reaction, the heating is stopped, and the reaction spreads from the bottom to the top in the form of a combustion wave. After the self-propagating reaction is completed, the single-phase Bi is naturally cooled. 2 Te 2 Se 1 ...

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Abstract

The invention provides a method for fast manufacturing n-type bismuth telluride based high-performance thermoelectric materials. The method specifically comprises the steps that 1), Bi powder, Te powder and Se powder are weighed according to the stoichiometric ratio of all elements in Bi2Te3-xSex, 0=<x<=3, and the Bi powder, the Te powder and the Se powder are evenly mixed and pressed to be blocks; 2), a self-propagating reaction is generated on the blocks in the step 1), cooling is carried out after the reaction is completed, and a single-phase Bi2Te3-xSex compound is obtained; 3), the single-phase Bi2Te3-xSex compound obtained in the step 2) is ground to be powder, then plasma activation sintering is carried out, and the high-performance Bi2Te3-xSex thermoelectric materials are obtained. The technology with self-propagating combustion synthesis combined with plasma activation sintering is adopted, the n-type bismuth telluride block thermoelectric materials with the thermoelectric optimal value zT reaching 0.95 within 426 K are manufactured within 20 min, and the advantages of being short in manufacturing time, simple in technology, high in thermoelectric performance of the materials and the like are achieved.

Description

technical field [0001] The invention belongs to the field of new energy materials, and in particular relates to a method for ultrafast preparation of n-type bismuth telluride-based high-performance thermoelectric materials. Background technique [0002] About 70% of the energy consumed in the world every year is wasted in the form of waste heat. If the waste heat can be effectively recycled, the problem of energy shortage will be greatly alleviated. Thermoelectric conversion technology is a technology that uses the Seebeck effect and Peltier effect of semiconductor thermoelectric materials to directly convert thermal energy and electrical energy, including thermoelectric power generation and thermoelectric refrigeration. This technology has the characteristics of small system size, high reliability, low operating cost, long life, simple manufacturing process, environmental friendliness, and wide applicable temperature range. field has been widely used. As a new type of en...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16B22F3/08B22F3/105
Inventor 唐新峰郑刚苏贤礼鄢永高
Owner 武汉新赛尔科技有限公司
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