The invention relates to a method of quickly preparing Mg-Si-Sn-based thermoelectric material in a controllable manner. The method comprises the following steps: 1) dosing and tabletting, namely in the presence of inert gases, weighing Mg powder, Mg2Si powder, Sn powder and Sb powder which are used as raw materials according to a stoichiometric ratio of each element in a chemical formula Mg2(1+z)Si1-xSnxSby (z is not smaller than 0 and not greater than 0.12, x is not smaller than 0 and not greater than 1.0, and y is not smaller than 0 and not greater than 0.025), and mixing and uniformly pressing the raw materials into blocks; 2) sealing the blocks in vacuum, then, heating the blocks to 823-833K, carrying out heat preservation for 5-10 minutes, and cooling the blocks along with a furnace; 3), grinding products obtained in the step 2) into powder in the presence of inert gases, and carrying out discharge plasma activated sintering to obtain the high-performance Mg-Si-Sn-based thermoelectric material. The method has the characteristics of simple process, low energy consumption, short preparation period, good repeatability, excellent thermoelectric properties of obtained block materials, and the like.