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Sb doped BiCuSeO thermoelectric material and preparation method thereof

A technology of thermoelectric materials and particle size, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of low dimensionless thermoelectric figure of merit, poor electrical transport performance, and low power factor, etc. Achieve the effect of improving power factor and dimensionless thermoelectric figure of merit, high production efficiency and short production cycle

Inactive Publication Date: 2017-11-24
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, like other oxide thermoelectric materials, there are also defects such as low electrical conductivity, poor electrical transport performance, low power factor, and low dimensionless thermoelectric figure of merit.

Method used

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  • Sb doped BiCuSeO thermoelectric material and preparation method thereof
  • Sb doped BiCuSeO thermoelectric material and preparation method thereof
  • Sb doped BiCuSeO thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A Sb-doped BiCuSeO thermoelectric material and a preparation method thereof. The steps of the preparation method are:

[0038] The chemical formula of the Sb-doped BiCuSeO thermoelectric material is Sb x Bi 1-x CuSeO, 0.005≤x≤0.02.

[0039] The first step, according to bismuth oxide powder: copper powder: selenium grain: bismuth powder: the ratio of the amount of material of antimony grain is 1: 3: 3: (1-3y): 3y batching, 0.005≤3y=x≤0.02, Then mix evenly to get mixed powder.

[0040] In the second step, the mixed powder is put into a ball mill jar, and ball milled for 5-8 hours under an inert atmosphere to obtain a single-phase Sb x Bi 1-x CuSeO powder, 0.005≤x≤0.02.

[0041] The third step, the single-phase Sb x Bi 1-x Put the CuSeO powder into the mold, place it in the plasma activated sintering furnace, and then start to raise the temperature and pressure at a constant speed at the same time, and raise the sintering temperature to 500-600°C and the sintering ...

Embodiment 2

[0047] A Sb-doped BiCuSeO thermoelectric material and a preparation method thereof. The steps of the preparation method are:

[0048] The chemical formula of the Sb-doped BiCuSeO thermoelectric material is Sb x Bi 1-x CuSeO, 0.02≤x≤0.08.

[0049] The first step, according to bismuth oxide powder: copper powder: selenium grain: bismuth powder: the ratio of the amount of material of antimony grain is 1: 3: 3: (1-3y): 3y batching, 0.02≤3y=x≤0.08, Then mix evenly to get mixed powder.

[0050] In the second step, the mixed powder is put into a ball mill jar, and ball milled for 5-8 hours under an inert atmosphere to obtain a single-phase Sb x Bi 1-x CuSeO powder, 0.02≤x≤0.08.

[0051] The third step, the single-phase Sb x Bi 1-x Put the CuSeO powder into the mold, place it in the plasma activated sintering furnace, and then start to raise the temperature and pressure at a constant speed at the same time, and raise the sintering temperature to 500-600°C and the sintering pre...

Embodiment 3

[0057] A Sb-doped BiCuSeO thermoelectric material and a preparation method thereof. The steps of the preparation method are:

[0058] The chemical formula of the Sb-doped BiCuSeO thermoelectric material is Sb x Bi 1-x CuSeO, 0.08≤x≤0.12.

[0059] The first step, according to bismuth oxide powder: copper powder: selenium grain: bismuth powder: the ratio of the amount of material of antimony grain is 1: 3: 3: (1-3y): 3y batching, 0.08≤3y=x≤0.12, Then mix evenly to get mixed powder.

[0060] In the second step, the mixed powder is put into a ball mill jar, and ball milled for 5-8 hours under an inert atmosphere to obtain a single-phase Sb x Bi 1-x CuSeO powder, 0.08≤x≤0.12.

[0061] The third step, the single-phase Sb x Bi 1-x Put the CuSeO powder into the mold, place it in the plasma activated sintering furnace, and then start to raise the temperature and pressure at a constant speed at the same time, and raise the sintering temperature to 500-600°C and the sintering pre...

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Abstract

The invention relates to a Sb doped BiCuSeO thermoelectric material and a preparation method thereof. The technical scheme is as follows: uniformly mixing bismuth oxide powder, copper powder, selenium granules, bismuth powder and antimony powder according to a mass ratio of 1: 3:3:(1-3Y): 3Y, wherein 3y is not smaller than 0.005 = x is not greater than 0.12, filling the mixture in a ball milling tank, ball milling in an inert gas atmosphere to prepare single-phase SbxBi1-xCuSeO powder, wherein x is not smaller than 0.005 and is not greater than 0.12, filling the single-phase SbxBi1-xCuSeO powder in a mold, placing the mold in a plasma activated sintering furnace, and heating up to 500-700 DEG C at a constant speed, boosting to 30-100MPa at a constant speed, cooling to the room temperature at a constant speed and reducing to the normal pressure at a constant speed, taking out the sintered mold, and demolding to obtain the Sb doped BiCuSeO thermoelectric material. The Sb doped BiCuSeO thermoelectric material has the advantages of simple process, short production cycle and high production efficiency. The products have the advantages of high purity, high density, low thermal conductivity, high power factor and high dimensionless thermoelectric merit value.

Description

technical field [0001] The invention belongs to the technical field of BiCuSeO thermoelectric materials. In particular, it relates to a Sb-doped BiCuSeO thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials can realize the direct conversion of thermal energy and electrical energy, and have good application prospects in the use of high-temperature industrial low-grade waste heat and dispersed distributed low-temperature waste heat for thermoelectric power generation, and have become a research hotspot in the field of materials. The key parameter "dimensionless figure of merit" that determines the thermoelectric conversion efficiency of materials can be expressed as: ZT=(S 2 σ / κ)T; where ZT is the dimensionless figure of merit coefficient, S is the Seebeck coefficient, σ is the electrical conductivity and κ is the thermal conductivity. A good thermoelectric material should meet the requirements of high electromotive ...

Claims

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Application Information

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IPC IPC(8): H01L35/14H01L35/16H01L35/18H01L35/22H01L35/34
CPCH10N10/851H10N10/852H10N10/853H10N10/855H10N10/01
Inventor 樊希安冯波江程鹏李光强贺铸李亚伟
Owner WUHAN UNIV OF SCI & TECH
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