Preparation method for diamond/copper-based composite material

A copper-based composite material and diamond technology, which is applied in the field of diamond metal-based composite materials, can solve problems affecting the performance of composite materials, and achieve the effects of short holding time, uniform grains, and accelerated densification process

Inactive Publication Date: 2014-09-24
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the addition of binder in the infiltration method, it cannot be completely removed during the reaction, and part of it will remain in the diamond / copper matrix composite material, thereby affecting the performance of the composite material

Method used

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  • Preparation method for diamond/copper-based composite material
  • Preparation method for diamond/copper-based composite material
  • Preparation method for diamond/copper-based composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Use magnetron sputtering process to plate 0.8 μm thick titanium coating on the surface of 10 μm diamond powder to form titanium-coated diamond composite powder; then use electroless copper plating process to plate 5 μm thick copper coating on the surface of the above-mentioned diamond composite powder to form copper clad Titanium-coated diamond composite powder; then the copper-clad titanium-coated diamond composite powder is mixed with copper powder to form a mixed powder, wherein the volume fraction of the diamond powder in the mixed powder is 20%. Put the mixed powder in the prefabricated graphite mold, and then carry out surface activation and plasma activation sintering (PAS) in the plasma activation sintering furnace. The surface activation time is 30s, the activation voltage is 20kV, the activation current is 100A, and the vacuum degree is ≤ 10Pa, the temperature was raised rapidly after surface activation, the heating rate was 100°C / min, the pressure was 30MPa, t...

Embodiment 2

[0030] Use magnetron sputtering process to plate 1.5 μm thick titanium coating on the surface of 10 μm diamond powder to form titanium-coated diamond composite powder; then use electroless copper plating process to plate 1 μm thick copper coating on the surface of the above-mentioned diamond composite powder to form copper clad Titanium-coated diamond composite powder; then the copper-clad titanium-coated diamond composite powder is mixed with copper powder to form a mixed powder, wherein the volume fraction of the diamond powder in the mixed powder is 30%. Put the mixed powder in the prefabricated graphite mold, then carry out surface activation and plasma activation sintering in the plasma activation sintering furnace, the surface activation time is 30s, the activation voltage is 20kV, the activation current is 100A, the vacuum degree is ≤10Pa, After activation, the temperature was raised rapidly, with a heating rate of 100°C / min and a pressure of 30MPa. The temperature was r...

Embodiment 3

[0033] Use magnetron sputtering process to plate 0.8 μm thick titanium coating on the surface of 10 μm diamond powder to form titanium-coated diamond composite powder; then use electroless copper plating process to plate 5 μm thick copper coating on the surface of the above-mentioned diamond composite powder to form copper clad Titanium-coated diamond composite powder; then the copper-clad titanium-coated diamond composite powder is mixed with copper powder to form a mixed powder, wherein the volume fraction of the diamond powder in the mixed powder is 40%. Put the mixed powder in the prefabricated graphite mold, then carry out surface activation and plasma activation sintering in the plasma activation sintering furnace, the surface activation time is 30s, the activation voltage is 20kV, the activation current is 100A, the vacuum degree is ≤10Pa, After activation, the temperature was raised rapidly, with a heating rate of 100°C / min and a pressure of 40MPa. The temperature was r...

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Abstract

The invention relates to the field of diamond / copper-based composite materials and preparation technologies thereof, and specifically discloses a diamond / copper-based composite material and a preparation method thereof. Mass fraction of the diamond in the composite material is 20%-50%, and diamond particles are uniformly distributed in a matrix. The specific preparation method comprises the following steps: firstly, preparing copper-coated titanium-coated diamond composite powder; then, mixing the copper-coated titanium-coated diamond composite powder with copper powder to form mixed powder; and finally, preparing a sintering test sample with high compactness by surface activating and plasma activating and sintering. The plasma activating and sintering process is as follows: a heating rate is 50-200 DEG C / min, vacuum degree is not greater than 10Pa, pressure applied while sintering is 30-40 MPa, a sintering temperature is 800-900 DEG C, and a heat preserving time is 5-7 minutes. The prepared diamond / copper-based composite material is low in sintering temperature, high in compactness, fine in crystalline grain, simple to operate, and good in controllability.

Description

technical field [0001] The invention belongs to the research field of diamond metal matrix composite materials, and relates to a preparation method of diamond / copper matrix composite materials. Background technique [0002] Diamond is the material with the best thermal conductivity in nature. The thermal conductivity at room temperature can reach 2200W / (m·K). Copper is one of the most important engineering materials in the industrial field. It has excellent thermal conductivity and electrical conductivity. It The coefficient of thermal expansion is 17×10 -6 K -1 , the thermal conductivity is 400W / (m·K). By adjusting the volume fraction of diamond in the diamond / copper-based composite material, many advantages such as high thermal conductivity and controllable thermal expansion coefficient of the composite material can be realized, thereby meeting the needs of electronic packaging materials in the field of microelectronics. Although the wetting of the interface between dia...

Claims

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Application Information

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IPC IPC(8): C22C1/05C22C1/10C22C9/00
Inventor 罗国强刘茹霞张联盟沈强李美娟王传彬陈斐
Owner WUHAN UNIV OF TECH
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