53results about How to "Sintered to achieve" patented technology

The invention discloses high-dispersion silver powder and solar battery electrode conductive silver paste, wherein the conductive silver paste is prepared from the following components in mass percentage: 53-61.8% of high-dispersion silver powder in claim 1, 21.5-31% of glass cement and 15-17.6% of organic carrier. The high-dispersion silver powder provided by the invention has very good dispersity and by means of the conductive silver paste prepared by the high-dispersion silver powder, the usage amount of the silver powder is reduced and the conductive efficiency is improved in the mean time; in addition, the conductive silver paste provided by the invention is clean and environmental-friendly and is suitable for popularization and application. By means of the high-dispersion silver powder and the solar battery electrode conductive silver paste which are provided by the invention, the defects of poor dispersity of the conventional silver powder and large usage amount of the silver powder of the conventional conductive silver paste are overcome.

The invention relates to a bulletproof ceramic chip and a preparation method thereof, wherein the first layer, the third layer and the fifth layer of the bulletproof ceramic chip are prepared from the following components: 82-99% of Al2O3 + 9-0.5% of Y2O3 + 9-0.5% of MgO in terms of mass percent; the second layer and the fourth layer of the bulletproof ceramic chip are prepared from the following components: 70-95% of SiC + 5-30% of Si in terms of mass percent; a thickness ratio of an Al2O3 layer to an SiC layer of the sintered bulletproof ceramic chip with a composite sandwich structure is 10-20:1; the bulletproof ceramic chip can be used as a hard bulletproof material for a human body and an armor. According to the preparation method, an oxidation product SiO2 of Si is used for wrapping the surface of SiC micro powder, so that the oxidization of the SiC micro powder is prevented, and the bulletproof ceramic chip with a layer structure is obtained; SiO2 is reacted with Al2O3, so that a mullite phase is formed, the effective combination between the Al2O3 layer and an SiC+Si layer is promoted, and therefore the ceramic chip transfers energy in the process of suffering from impacts.

The invention is suitable for the field of printing electronics, and provides a method for low-temperature ink-jet printing of a nano-metal pattern. The method comprises the following steps: carrying out ink-jet printing on a substrate by using ink under a negative pressure condition to obtain an ink-jet printed pattern, wherein the ink includes a main body solvent A and a Marangoni initiation solvent B; placing the ink-jet printed pattern in vacuum environment, and carrying out primary drying treatment, wherein the pressure P2 of the vacuum environment and the saturated vapor pressure PB of the Marangoni initiation solvent B meet a formula of P2 - PB >= 1000 Pa; adjusting the relative vacuum degree to -0.08 ~ -0.1 MPa, and carrying out secondary drying treatment, wherein the temperature T2 of the vacuum drying treatment is smaller than the sintering temperature Ts of nano-metal particles in the ink; sintering the vacuum-dried ink-jet printed pattern in vacuum environment; and annealing the sintered ink-jet printed pattern in the vacuum environment.

A high-frequency and low-dielectric-constant ceramic dielectric material matched with nicket internal electrode and a method for producing capacitor using same. The ceramic dielectric material consists of main crystalline phase, modifying additive and sintering flux. The main crystalline phase is MgZrxSi(1−x)O3, wherein 0.05≰x≰0.15. The modifying additive is one or more of MnO2, Al2O3, CaO, Bi2O3 and TiO2, and the sintering flux is one or more of B2O3, SiO2, ZnO, Li2O, K2O and BaO. The ceramic dielectric material has good uniformity, and excellent dielectric properties, meets the requirements of COG characteristics in EIA standard, and meets the environmental requirements. The ceramic dielectric material can be sintered under the reducing atmosphere and can be matched with nickel electrodes. The chip multilayer ceramic capacitor made of the ceramic dielectric material and nickel internal electrodes has stable performance.

The invention discloses a method for preparing porous silicon carbide ceramics by reaction sintering and micro-oxidation treatment. First, a certain amount of mesocarbon microspheres and silicon powder are wet ball-milled to obtain mixed powder, and then dry-pressed at room temperature to prepare a green body. , and finally sintered at high temperature under micro-oxidation treatment to obtain porous silicon carbide ceramics. Under the micro-oxidation treatment, a large number of silicon carbide whiskers were generated in situ; at the same time, SiO 2 The glassy phase promotes sintering and forms sintering necks between SiC particles. The invention has simple operation and high production efficiency, and the porous silicon carbide ceramic prepared by the method has uniform pore size distribution and high bending strength, and the strength reaches 176 MPa when the porosity is 32%.

The invention discloses a high-temperature-resistant special ceramic for a sparking nozzle of an oil-fired machine and a preparation method thereof. The special ceramic is composed of the following raw materials in parts by weight: 30-40 parts of andalusite, 22-28 parts of volcanic rock, 10-15 parts of diatomite, 15-25 parts of aluminium oxide, 3-6 parts of tantalum carbide, 2-4 parts of cerous sulfide, 6-12 parts of titanium oxide, 5-10 parts of magnesium oxide, 4-8 parts of zirconium oxide, 3-5 parts of polyvinylpyrrolidone, 2.5-4.5 parts of sodium hydroxypropyl oxidized starch succinate, 4-6 parts of sorbitan trioleate, 3-5 parts of coconut oil monoethanolamide, 2-4 parts of dispersing agent NNO, and proper amount of deionized water. A bowl mill is employed for preparing an ultrafine powder, addition of proper amount of titanium oxide and magnesium oxide helps to reduce the sintering temperature of a blank and save energy, and addition of proper amount of tantalum carbide and cerous sulfide helps to reduce the possibility of the ceramic nozzle being oxidized in a high-temperature environment. experiment measuring results show that the ceramic nozzle is resistant to a high temperature up to 2500 DEG C and has the density larger than 4.0 g / cm<3>, and the nozzle has the service life larger than 10000 h.

The invention provides a growth type polycrystalline diamond sintered assembly and an application thereof. The polycrystalline diamond sintered assembly comprises a heating pipe, an insulating pipe, a melt infiltration cavity, a metal binding agent and diamond powder, wherein the heating pipe is positioned on the outermost layer of the sintered assembly; the insulating pipe is positioned in the heating pipe and is clung to the heating pipe; a first hollow cavity is formed in the insulating pipe; the melt infiltration cavity is formed in the first hollow cavity, and a second hollow cavity is formed in the melt infiltration cavity; the second hollow cavity is filled with the metal binding agent and the diamond powder.