Aluminum nitride ceramic low-temperature sintering aid system

A low-temperature sintering technology for aluminum nitride ceramics, applied in the field of sintering aid system, can solve the problems of ineffective cost reduction, thermal conductivity decrease, long holding time, etc., and achieve low sintering cost, high thermal conductivity, simple and reliable process Effect

Active Publication Date: 2017-11-21
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These sintering aid systems often require a long holding time, and after the introduction of Ca, it can form a liquid phase with alumina and has good wettability to AlN particles, which often leads to a serious drop in thermal conductivity and cannot effectively reduce costs.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Add 95g of aluminum nitride powder and 5g of sintering aids titanium oxide and vanadium oxide to 21g of ethanol / butanone solvent system (the mass ratio of ethanol and acetone is 40:60), the ratio of titanium oxide and vanadium oxide is 1:1 . Using 2g triolein as a dispersant, adding 8g PVB as a binder and 8g DBP as a plasticizer after ball milling, defoaming and casting after ball milling again, and preparing a cast film with a thickness of 0.15-0.2mm. After the cast film is debonded, it is sintered in a carbon tube furnace, and the temperature is raised to 1650 °C at a rate of 5 °C / min, and the sintering is achieved by keeping the temperature for 2 hours. A dense and complete aluminum nitride substrate can be obtained.

Embodiment 2

[0039] Add 94g of aluminum nitride powder and 6g of sintering aids titanium oxide and niobium oxide to 21g of ethanol / toluene solvent system (the mass ratio of ethanol and toluene is 40:60), and the ratio of titanium oxide and niobium oxide is 1:2. Using 2.5g phosphate ester as dispersant, after ball milling, add 8.5g PVB as binder, 9g DBP as plasticizer, after ball milling again, defoaming, casting, and prepare casting film with thickness of 0.15-0.2mm. After the cast film is debonded, it is sintered in a carbon tube furnace, and the temperature is raised to 1650 °C at a rate of 5 °C / min, and the sintering is achieved by keeping the temperature for 2 hours. A dense and complete aluminum nitride substrate can be obtained.

Embodiment 3

[0041] Add 93g of aluminum nitride powder and 7g of sintering aids titanium oxide and tantalum oxide to 21g of ethanol / n-hexane solvent system (the mass ratio of ethanol and n-hexane is 50:50), the ratio of titanium oxide and tantalum oxide is 1: 3. Using 2.0g castor oil as dispersant, after ball milling, add 9g PVB as binder, 10g DBP as plasticizer, after ball milling again, defoaming, casting, and prepare cast film with thickness of 0.15-0.2mm. After the cast film is debonded, it is sintered in a carbon tube furnace, and the temperature is raised to 1650°C at a rate of 5°C / min, and the sintering is achieved by holding the heat for 2 hours. A dense and complete aluminum nitride substrate can be obtained.

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Abstract

The present invention relates to an aluminum nitride ceramic low-temperature sintering aid system, which comprises a component A and a component B, wherein the component A is at least one selected from TiO2, ZrO2 and HfO2, and the component B is at least one selected from V2O5, Nb2O5 and Ta2O5. Compared to the scheme reported in the current literatures, the sintering aid scheme of the present invention has the following advantages that the densification process of the material can be achieved within the short time, the process is simple and reliable, and the high thermal conductivity can be obtained.

Description

technical field [0001] Aiming at the problems of high sintering temperature, long sintering time, and high cost of aluminum nitride ceramics, the present invention proposes a sintering aid system with low sintering temperature, short holding time, and effective densification, which belongs to the preparation process and application field of ceramics . Background technique [0002] With the development of modern technology, especially the development of electronic packaging technology, the increase in the integration of power electronic devices, and the application of LED lighting, heat dissipation has become a key issue that needs to be solved urgently. If the heat generated cannot be dissipated in time, it will cause the temperature of the semiconductor chip to rise, resulting in unstable performance of electronic devices, or the rise of the junction temperature of the LED, resulting in a decrease in luminous efficiency and shortened life. At present, the problem of heat d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/622
CPCC04B35/581C04B35/622C04B2235/3232C04B2235/3239C04B2235/3244C04B2235/3251C04B2235/6562C04B2235/9607
Inventor 张景贤李晓光江东亮
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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