Method for preparing porous silicon carbide ceramics by reaction sintering and micro-oxidation treatment
A porous silicon carbide and micro-oxidation technology, applied in the field of structural ceramics manufacturing, can solve problems such as unfavorable mass production, high sintering temperature, low production efficiency, etc., and achieve the effects of low cost, uniform pore size distribution, and improved strength
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1
[0025] (1) Weigh the molar ratio of Si: MCMB=1:1, mix the weighed two powders with absolute ethanol in a volume ratio of 1:3, ball mill for 24 hours, at 80°C Dry for 24 hours and pass through a 200-mesh sieve;
[0026] (2) molding the powder after ball milling under a pressure of 200MPa to obtain a green body;
[0027] (3) Place the obtained green body in a graphite crucible, and then place them together in an atmosphere sintering furnace, and raise the temperature to 1100° C. at a rate of 300° C. / h under the condition of flowing argon;
[0028] (4) Introduce a small amount of air into the furnace cavity to make it at a slight positive pressure of 0.01MPa, continue to heat up to 1450°C at a heating rate of 300°C, and keep it for 1h.
[0029] (5) Porous silicon carbide ceramics are obtained by cooling with the furnace.
[0030] The physical performance test and microstructure analysis of the porous silicon carbide ceramics obtained in this embodiment showed that the bending s...
example 2
[0032] (1) Weigh according to the molar ratio Si:MCMB=0.6:1, mix the weighed powder with absolute ethanol in a volume ratio of 1:2, ball mill for 12 hours, and dry at 100°C for 18 hours , through a 200-mesh sieve;
[0033] (2) molding the powder after ball milling under a pressure of 80 MPa to obtain a green body;
[0034] (3) Place the obtained green body in a graphite crucible, and then place them together in an atmosphere sintering furnace, and raise the temperature to 1000° C. at a rate of 300° C. / h under the condition of flowing argon;
[0035] (4) Introduce a small amount of air into the furnace cavity to make it at a slight positive pressure of 0.005MPa, continue to heat up to 1450°C at a heating rate of 200°C / h, and keep it warm for 2h.
[0036] (5) Porous silicon carbide ceramics are obtained by cooling with the furnace.
[0037] The bending strength of the porous silicon carbide ceramic obtained in this example is 160 MPa, and the corresponding porosity is 37%.
example 3
[0039] (1) Weigh the molar ratio of Si:MCMB=0.8:1, mix the weighed powder with absolute ethanol at a volume ratio of 1:1.5, ball mill for 18 hours, and dry at 90°C for 20 hours, through a 200-mesh sieve;
[0040] (2) The ball-milled powder is molded under a pressure of 75 MPa to obtain a green body.
[0041] (3) Place the obtained green body in a graphite crucible, and then place them together in an atmosphere sintering furnace, and raise the temperature to 1200° C. at a rate of 250° C. / h under the condition of flowing argon;
[0042] (4) Introduce a small amount of air into the furnace cavity to make it at a slight positive pressure of 0.015MPa, continue to heat up to 1450°C at a heating rate of 200°C / h, and keep it warm for 1.5h
[0043] (5) Obtain high-strength porous silicon carbide ceramics with furnace cooling.
[0044] The bending strength of the porous silicon carbide obtained in this example is 170 MPa, and the corresponding porosity is 34%.
PUM
Property | Measurement | Unit |
---|---|---|
bending strength | aaaaa | aaaaa |
particle size | aaaaa | aaaaa |
particle diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com