Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof

A bismuth telluride-based, thermoelectric power generation technology is applied in the manufacture/processing of thermoelectric devices, thermoelectric device components, thermoelectric devices using only the Peltier or Seebeck effect, etc. Cost and other issues, to achieve the effect of reducing costs, reducing workload and scrap rate

Active Publication Date: 2009-04-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This kind of thermoelectric power generation device has the following problems in practical application: 1) in a humid environment, moisture accumulates in the gaps inside the device, and the device is prone to thermal short circuit, which greatly reduces the output power; The solder falls off at high temperature and fails. The operating temperature range of the device is limited by the melting point of the solder, and the potential of bismuth telluride-based materials cannot be fully utilized.
However, the manufacturing cost of this device is very high, much higher than the cost of soldering devices, because: 1) The metal molybdenum barrier layer and the aluminum electrode are sprayed by plasma, and the spraying temperature is high,

Method used

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  • Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof
  • Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof
  • Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof

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Embodiment Construction

[0026] Further illustrate substantive characteristics and remarkable progress of the present invention below in conjunction with accompanying drawing.

[0027] The manufacturing method of the bismuth telluride-based thermoelectric power generation device of the present invention includes six steps: preparation of a porous support frame, preparation of components, loading of components, soldering of cold-end electrodes, spraying of hot-end electrodes, and grinding of sprayed surfaces. Now elaborate as follows:

[0028] 1) Preparation of porous scaffolds. Select high-temperature-resistant resin (trade name: PBB) as the material of the porous support frame 10, heat the material to a liquid state, pour it into a preheated mold, keep the pressure, form, pass water to cool the mold to room temperature, and take out the support frame. Porous support frame 10 such as image 3 As shown, the holes of the porous support frame are straight holes, without slopes and component positioning...

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Abstract

The invention relates to a bismuth telluride-based thermoelectric generating device and a manufacturing method thereof. The bismuth telluride-based thermoelectric generating device is characterized by consisting of a perforated bracing frame, P/N-type elements, a barrier layer, a soldering tin layer, a low-temperature terminal electrode, a ceramic substrate, a sealant, a high-temperature terminalspraying electrode and the ceramic substrate; the pattern of the low-temperature terminal electrode corresponds to holes of the perforated bracing frame. The manufacturing method comprises the steps of preparing the perforated bracing frame, preparing the elements, mounting the elements, soldering the cold terminal electrode with tin, spaying a hot terminal electrode, grinding the sprayed surfaceand the like; the perforated bracing frame is put on the ceramic substrate covered by the low-temperature terminal electrode, the low-temperature terminal electrode is arranged in a hole of the bracing frame, the bismuth telluride-based P/N-type elements are put in the holes of the bracing frame, the soldering tin layers of the elements contact with a tin layer on the low-temperature terminal electrode, the elements are soldered on the low-temperature terminal electrode by heating; the high-temperature terminal of the device is sprayed with aluminum or aluminum alloy and taken as the high-temperature terminal electrode, and the P/N-type elements are connected in series. The device and the method overcome the problem that the existing tin soldering devices are restricted by operating environment and temperature, and the rejection rate and the manufacturing cost are far less than these of plasma spraying devices.

Description

technical field [0001] The invention relates to a thermoelectric device and a manufacturing method thereof, in particular to a sealed bismuth telluride-based low-temperature thermoelectric power generation device and a manufacturing method thereof, belonging to the technical field of thermoelectric conversion. Background technique [0002] Thermoelectric power generation is a technology that uses the Seebeck effect of semiconductor materials to realize direct conversion of thermal energy and electrical energy. It has broad application prospects and potential social and economic benefits in solar photoelectric-thermoelectric hybrid power generation and industrial waste heat thermoelectric power generation. [0003] Thermoelectric power generation devices are the key to thermoelectric power generation technology. They are mainly composed of thermoelectric elements made of P-type and N-type semiconductor materials. The voltage of a single thermoelectric element is very low. Usua...

Claims

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Application Information

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IPC IPC(8): H01L35/32H01L35/08H01L35/34
Inventor 李小亚陈立东夏绪贵唐云山陶顺衍吴燕青鲁瑞平
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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