Bismuth-telluride-based thermoelectric electrification device and manufacturing method thereof

Abstract

The invention relates to a bismuth telluride-based thermoelectric generating device and a manufacturing method thereof. The bismuth telluride-based thermoelectric generating device is characterized by consisting of a perforated bracing frame, P / N-type elements, a barrier layer, a soldering tin layer, a low-temperature terminal electrode, a ceramic substrate, a sealant, a high-temperature terminalspraying electrode and the ceramic substrate; the pattern of the low-temperature terminal electrode corresponds to holes of the perforated bracing frame. The manufacturing method comprises the steps of preparing the perforated bracing frame, preparing the elements, mounting the elements, soldering the cold terminal electrode with tin, spaying a hot terminal electrode, grinding the sprayed surfaceand the like; the perforated bracing frame is put on the ceramic substrate covered by the low-temperature terminal electrode, the low-temperature terminal electrode is arranged in a hole of the bracing frame, the bismuth telluride-based P / N-type elements are put in the holes of the bracing frame, the soldering tin layers of the elements contact with a tin layer on the low-temperature terminal electrode, the elements are soldered on the low-temperature terminal electrode by heating; the high-temperature terminal of the device is sprayed with aluminum or aluminum alloy and taken as the high-temperature terminal electrode, and the P / N-type elements are connected in series. The device and the method overcome the problem that the existing tin soldering devices are restricted by operating environment and temperature, and the rejection rate and the manufacturing cost are far less than these of plasma spraying devices.

Description

technical field [0001] The invention relates to a thermoelectric device and a manufacturing method thereof, in particular to a sealed bismuth telluride-based low-temperature thermoelectric power generation device and a manufacturing method thereof, belonging to the technical field of thermoelectric conversion. Background technique [0002] Thermoelectric power generation is a technology that uses the Seebeck effect of semiconductor materials to realize direct conversion of thermal energy and electrical energy. It has broad application prospects and potential social and economic benefits in solar photoelectric-thermoelectric hybrid power generation and industrial waste heat thermoelectric power generation. [0003] Thermoelectric power generation devices are the key to thermoelectric power generation technology. They are mainly composed of thermoelectric elements made of P-type and N-type semiconductor materials. The voltage of a single thermoelectric element is very low. Usua...

AI Technical Summary

Problems solved by technology

This kind of thermoelectric power generation device has the following problems in practical application: 1) in a humid environment, moisture accumulates in the gaps inside the device, and the device is prone to thermal short circuit, which greatly reduces the output power; The solder falls off at high temperature and fails. The operating temperature range of the device is limited by the melting point of the solder, and the potential of bismuth telluride-based materials cannot be fully utilized.

However, the manufacturing cost of this device is very high, much higher than the cost of soldering devices, because: 1) The metal molybdenum barrier layer and the aluminum electrode are sprayed by plasma, and the spraying temperature is high, and the heat is accumulated on the grid basket, causing the grid The temperature of the grid basket rises and deforms, which increases the workload of the subsequent process-grinding. If the deformation is serious, the device will be scrapped and the yield of the device will be reduced; 2) The cost of plasma spraying equipment is expensive, and the operating cost is high, spraying a certain thickness The electrodes often need to be sprayed dozens of times, and the cost is quite high

[0006] The use temperature of bismuth telluride-based power generation devices prepared by tin soldering is limited, while the yield of devices prepared by plasma spraying is low and the cost is high, so its large-scale application is limited by high cost

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