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Gallium sulfide quantum dot material and preparation method thereof

A technology of quantum dot materials and gallium sulfide, applied in the field of gallium sulfide quantum dot materials and its preparation, can solve the problems of non-adjustability, inability to obtain products, and narrow fluorescent emission range, and achieve low cost, simple preparation method, and simple process Effect

Active Publication Date: 2021-06-18
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this product emits fluorescence under light excitation, both the preparation method and the product have shortcomings. First, the fluorescence emitted by the product comes from the rare earth element doped in it rather than the gallium sulfide matrix; second, the fluorescence emission range Too narrow and not tunable; again, the preparation method cannot obtain products with tunable fluorescence emitted by GaS over a wide range

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  • Gallium sulfide quantum dot material and preparation method thereof
  • Gallium sulfide quantum dot material and preparation method thereof
  • Gallium sulfide quantum dot material and preparation method thereof

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Embodiment 1

[0040] The concrete steps of preparation are:

[0041] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:0.5:80:20; where the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixed solution was placed in an inert atmosphere at 100°C for 10 minutes, and then reacted at 220°C for 20 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0042] Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitant is the ratio of 1:50:1400, add the solvent and the precipitant successively to the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then, the suspension is subjecte...

Embodiment 2

[0044] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:2.5:65:40; where the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixed solution was placed in an inert atmosphere at 105° C. for 8.8 minutes, and then reacted at 240° C. for 15.5 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0045] Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitant is the ratio of 1:113:1075, add the solvent and the precipitant successively to the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then, the suspension is subjected to solid-liquid separation treatment; w...

Embodiment 3

[0047] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:5:50:60; where the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixture was placed in an inert atmosphere at 110° C. for 7.5 minutes, and then reacted at 260° C. for 11 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0048]Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitating agent is the ratio of 1:175:750, add the solvent and the precipitating agent successively in the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then the suspension is subjected to solid-liquid separation treatment;...

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Abstract

The invention discloses a gallium sulfide quantum dot material and a preparation method thereof. The material is gallium sulfide quantum dots, the chemical formula is Ga x S 3 , where 1≤x≤5, the chemical formula is Ga x S 3 The gallium sulfide quantum dots have a diameter of 1-8nm; the method is to mix four or mixed to obtain a mixed solution, and then the mixed solution is placed in an inert atmosphere and reacted at 220-300°C for 2-20min to obtain a reaction solution. After that, the molar ratio of the gallium source, solvent and precipitant in the reaction solution The ratio is 1:50-300:100-1400, adding solvent and precipitant successively to the reaction liquid cooled under an inert atmosphere to obtain a suspension, and then performing solid-liquid separation on the suspension to obtain a gallium sulfide quantum dot material . Its luminescence peak under the excitation of ultraviolet light is adjustable in the range of 420-505nm, and it is very easy to be widely commercialized and applied in the fields of light-emitting devices and ion detection.

Description

technical field [0001] The invention relates to a quantum dot material and a preparation method thereof, in particular to a gallium sulfide quantum dot material and a preparation method thereof. Background technique [0002] Quantum dots are zero-dimensional nanomaterials. As the size decreases, the material will exhibit special physical and chemical properties. This size effect makes quantum dots have some special properties different from macroscopic materials, and can be used in photodetection, solar cells, luminescent materials, and ion detection. field. [0003] Gallium sulfide is a group III-VI direct bandgap semiconductor material, which is mostly used as a matrix of rare earth luminescent materials and not directly as a luminescent material, such as the title "Photoluminescence of Ga 2 S 3 :Sm 2+ Crystals", InorganicMaterials, 2008, 44, 563 ("Photoluminescence of Samarium-doped Gallium Sulfide Crystals", "Inorganic Materials" 2008, Volume 44, page 563). The produ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/62
CPCC09K11/621
Inventor 费广涛胡泽敏
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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