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Method for improving efficiency of flexible copper indium gallium sulfide selenide thin film solar cell

A copper indium gallium sulfide selenide, solar cell technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of harsh preparation conditions, high cost, low photoelectric conversion efficiency, etc., to promote grain growth, low equipment requirements , the effect of reducing the time and temperature of selenization

Active Publication Date: 2020-02-04
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems in the prior art that the preparation of CIGSSe solar cells requires high-vacuum equipment and harsh preparation conditions, high cost, and low photoelectric conversion efficiency, the present invention provides a method for improving the efficiency of flexible copper indium gallium sulfur selenide thin film solar cells method

Method used

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  • Method for improving efficiency of flexible copper indium gallium sulfide selenide thin film solar cell
  • Method for improving efficiency of flexible copper indium gallium sulfide selenide thin film solar cell
  • Method for improving efficiency of flexible copper indium gallium sulfide selenide thin film solar cell

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Embodiment 1

[0030] Step A. Sputter molybdenum electrode on a clean polyimide / stainless steel substrate: When the pressure of argon reaches 2Pa, turn on the DC sputtering power supply, adjust the power to 200W, pre-sputter for 5min, and then remove the metal stopper Plate, sputter on the substrate for 30 minutes, then adjust the argon pressure in the cavity to 1 Pa, sputter for 30 minutes, turn off the power supply, and obtain a molybdenum electrode with good density and adhesion.

[0031] Step B. Preparation of CIGSSe precursor solution: First, weigh copper powder (0.0699g, 1.10mmol), indium powder (0.0960g, 0.83mmol), gallium powder (0.0250g, 0.35mmol), selenium powder (0.1812g, 2.29 mmol), bismuth chloride powder (0.0104g, 0.0456mmol) and potassium chloride powder (0.0034g, 0.0456mmol) were added to a 25mL Erlenmeyer flask; then 5mL ethylenediamine and 5mL ethanedithiol were added. Finally, the round-bottomed flask was sealed and placed on a heating platform, and magnetically stirred at 60...

Embodiment 2

[0041] Step A. Sputter molybdenum electrode on a clean polyimide / stainless steel substrate: when the pressure of argon reaches 3Pa, turn on the DC sputtering power supply, adjust the power to 250W, pre-sputter for 5min, and then remove the metal stopper The plate was sputtered on the substrate for 60 minutes, then the argon gas pressure in the cavity was adjusted to 0.1 Pa, sputtered for 60 minutes, and the power was turned off to obtain a molybdenum electrode with good density and adhesion.

[0042] Step B. Preparation of CIGSSe precursor solution: first, weigh copper nitrate (0.206g, 1.10mmol), indium nitrate (0.250g, 0.83mmol), gallium nitrate (0.0895g, 0.35mmol), selenium dioxide (0.2541g, 2.29mmol), bismuth nitrate powder (0.193g, 0.4mmol) and potassium hydroxide powder (0.0228g, 0.4mmol) were added to a 25mL Erlenmeyer flask; then 5mL ethylenediamine and 5mL ethanedithiol were added. Finally, the round-bottomed flask was sealed and placed on a heating platform, and magnetic...

Embodiment 3

[0050] The steps in this embodiment are roughly similar to those in embodiment 1, and the similarities will not be repeated. The difference is that bismuth chloride powder is not added in step B.

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Abstract

The present invention belongs to the field of solar cell preparation, in particular to a method for improving efficiency of a flexible copper indium gallium sulfide selenide thin film solar cell. Thespecific steps are as follows: firstly, a molybdenum electrode is sputtered on a substrate; a CIGSSe precursor solution is prepared; the precursor solution is spin-coated on the substrate to prepare aCIGSSe prefabricated film, which is heated, selenized and annealed to obtain a CIGSSe film; then a cadmium sulfide film is prepared on the CIGSSe film; zinc oxide and indium doped tin oxide thin films are sputtered on the cadmium sulfide film in turn; finally silver electrode evaporation is carried out, then the flexible CIGSSe thin film solar cell is obtained. By introducing bismuth and potassium compounds into the CIGSSe precursor solution, the growth of CIGSSe crystals is promoted; grain boundary defects are passivated; and then the performance of the CIGSSe solar cell is improved. The invention is environmental, safe and low-cost, and the efficiency of the CIGSSe thin film solar cell is effectively improved.

Description

Technical field [0001] The invention belongs to the field of solar cell preparation, and specifically relates to a method for improving the efficiency of a flexible copper indium gallium sulfur selenium thin film solar cell. Background technique [0002] Solar energy has the advantages of inexhaustible, widely distributed, safe, green and environmental protection, and it is the most potential renewable energy. Solar cells are devices that directly convert solar energy into electrical energy, and have become the main research direction in the field of renewable energy in countries around the world. At present, silicon solar cells have been widely used in people’s production and life, such as large power stations, distributed power stations, photovoltaic street lamps, etc. However, because silicon solar cells are fragile and fragile, they need to be sealed and protected by tempered glass, which makes silicon solar cells very It is thick and cannot be bent and cannot be applied to ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032C23C14/08C23C14/16C23C14/20C23C14/24C23C14/34C23C14/35
CPCC23C14/086C23C14/16C23C14/165C23C14/20C23C14/205C23C14/24C23C14/34C23C14/35H01L31/0323H01L31/18Y02E10/541Y02P70/50
Inventor 肖振宇訾威程念高梦格刘文元李昱森吴月月孙书杰赵志强孙柱柱李彦磊房良刘江峰涂友超耿晓菊
Owner XINYANG NORMAL UNIVERSITY
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