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112 results about "Tin oxide thin films" patented technology
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Protective layers for sputter coated article
InactiveUS6833194B1Improve throughputTendency increaseVacuum evaporation coatingSputtering coatingLow emissivityMetal Primer
Owner:VITRO FLAT GLASS LLC
Shippable heat-treatable sputter coated article and method of making same
InactiveUS7329433B2Reduce smogReduce heatVacuum evaporation coatingSputtering coatingAlloySilicon oxide
Owner:VITRO FLAT GLASS LLC
Room temperature hydrogen sensor based on palladium-nanometer-scale stannic oxide film type electrode
The invention relates to a micro hydrogen sensor, in particular to preparation and performance detection of a palladium-nanometer-scale stannic oxide film type electrode in a hydrogen sensor. In the micro hydrogen sensor, aluminum oxide is used as a substrate, and palladium and nanometer-scale stannic oxide deposit on the substrate as a hydrogen sensitive material by adopting a method of electrode-free electrolysis. The invention provides a preparation method of the palladium-nanometer-scale stannic oxide film type electrode, the palladium-nanometer-scale stannic oxide film type electrode better enhance the performance of the hydrogen sensor as the hydrogen sensitive material, development and application of a nanometer-scale stannic oxide material are beneficial to enhancing the performance of the stannic oxide hydrogen sensor, and stannic oxide is doped into noble metals such as the palladium and the like to enhance the flexibility, reduce the response time and also lower the operation temperature. The invention has the advantages of shorter response time, better stability, better repeatability, micro sensor size, low processing cost and being beneficial to minaturization, integration and industrialization, is particularly suitable for room temperature detection and can also recycle ceramic wafers of a substrate carrier.
Owner:ZHEJIANG UNIV
Stannic oxide membrane electrode material for dye-sensitized solar cell and preparing method thereof
ActiveCN103474245AImprove light scattering performanceImprove photoelectric conversion efficiencyLight-sensitive devicesFinal product manufactureSolar cellControllability
The invention provides a stannic oxide (SnO2) membrane electrode material for a dye-sensitized solar cell and a preparing method thereof. A carbon sphere synthesized through a hydrothermal method is utilized as a formwork, alkali treatment is carried out on the carbon sphere formwork to enhance the adsorbing capacity of the surface layer of the carbon sphere formwork to stannic ions, meanwhile the concentration of precursor tin salt solution is regulated to prepare the stannic oxide multi-shell hollow sphere with two adjacent outmost shells, and the hollow spheres are utilized as the dye-sensitized solar cell electrode materials to increase transmission paths of light in the membrane electrode. The stannic oxide membrane electrode material has excellent light scattering capacity, improves the absorption rate of dye molecules to light and obviously improves the photoelectric converting efficiency of the dye-sensitized solar cell. In addition, the preparing method has certain universality. The Zno, TiO2, Co3O4, CuO and Fe2O3 multi-shell hollow sphere with the two adjacent outmost shells is prepared by changing metal precursor salt solution. The preparing method is convenient to operate, high in controllability and wide in application prospect.
Owner:INST OF PROCESS ENG CHINESE ACAD OF SCI
A polycrystalline tin dioxide resistive thin film and its preparation method and application
InactiveCN102260846AGood resistive propertiesResistance stableVacuum evaporation coatingSputtering coatingTin dioxideSputtering
The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.
Owner:FUDAN UNIV
Preparation method of tin oxide film
The invention discloses a preparation method of a tin oxide film, and belongs to the technical field of film preparation. The preparation method is as follows: a fluoride of antimony is used as a doping source, a chloride of tin is used as a starting raw material, after mixed atomization, the fluoride of antimony and the chloride of tin are deposited on the surface of a high temperature resistant substrate to from a transparent fluorine-antimony co-doping tin oxide thin film with good functions. According to the method, in a SnO2 crystal structure, fluoride ions replace part of oxygen ion positions, antimony ions replace part of tin ion positions for doping, and higher carrier density is obtained, so that the tin oxide film is better in electrical conductivity, atmosphere sensitivity, transmittance and the like than single fluorine or single antimony doping film, and is a very advanced and potential semiconductor functional thin film material.
Owner:YANGZHOU MINGSHENG NEW TECH
Preparation method of niobium-doped stannic oxide monocrystal film with high migration rate
InactiveCN107419333APrecise control of doping ratioImprove mobilityPolycrystalline material growthFinal product manufactureNiobiumCharge carrier mobility
The invention relates to a preparation method of niobium-doped stannic oxide monocrystal film with a high migration rate. The method comprises the step of using an MOCVD method to grow the niobium-doped stannic oxide monocrystal film on a magnesium fluoride substrate under the condition of vacuum by using tetraethyltin and niobium ethoxide as metal organic sources, using oxygen as an oxidizing gas, and using nitrogen as a carrier gas. The stannic oxide film is an epitaxial material with a monocrystal structure, no twin crystal and domain structure exist in the film, the carrier migration rate of the niobium-doped stannic oxide film is up to 83.8cm<2>V<-1>s<-1>, and average transmittance of a visible light area reaches 83%. The method can be used for preparing transparent semiconductor devices or ultraviolet electronic devices.
Owner:SHANDONG UNIV
Antimony selenide thin film solar cell and preparation method thereof
InactiveCN107546289AIncrease photocurrentImprove stabilityFinal product manufacturePhotovoltaic energy generationCadmium sulfideAntimony
The invention discloses an antimony selenide thin film solar cell and a preparation method thereof. The cell comprises a conductive substrate, an n-type layer, a p-type layer and an electrode, whereinthe n-type layer is a tin oxide thin film, and the p-type layer is an antimony selenide thin film. Compared with a traditional n-type layer cadmium sulfide, tin oxide used in the antimony selenide thin film is green and non-toxic and can be used for a novel green and non-toxic antimony selenide thin film solar cell; and moreover, the tin oxide is large in energy gap and stable in chemical property, the light absorption of the cell on a short wave band can be improved, a light current of the cell is increased, and higher device stability is obtained. By the method, the high-efficiency, green and non-toxic antimony selenide thin film solar cell is expected to be obtained.
Owner:HUAZHONG UNIV OF SCI & TECH
Preparation method of nitrogen-doped tin dioxide film
InactiveCN102644055AWide variety of sourcesReduce pollutionConductive layers on insulating-supportsVacuum evaporation coatingTin dioxideSputtering
The invention discloses a preparation method of a nitrogen-doped tin dioxide film. The tin dioxide film is prepared by a magnetron sputtering method; and in magnetron sputtering, the mixed gas of O2 and N2 is led in according to a proportion of O2:N2=(1-6):(99-94), and the air pressure in a magnetron sputtering room is controlled to be lower than or equal to 5Pa. In the invention, a nitrogen-doped SnO2 film is prepared by a reaction magnetron sputtering method; the preparation technology is simple and easy to control and is a basic technology for industrially producing a film at present; the nitrogen element is widely available, the cost is low, and the reaction product is nontoxic and pollution-free to the environment; and the resistivity of a transparent conductive film obtained by controlling the technological parameters is lower than 2.4x10<-3>(ohm).cm, and the visible light transmittance is greater than 80%, thus the requirements for the performance of a commercial transparent conductive film are met.
Owner:SOUTHEAST UNIV
Tin oxide room-temperature gas-sensitive element and its preparation method
InactiveCN102788819AHigh sensitivityShort response timeAnodisationMaterial analysis by electric/magnetic meansSlurryHeat treated
The invention discloses a tin oxide room-temperature gas-sensitive element and its preparation method. The method comprises the following steps: 1, depositing a metal tin film having a thickness of 400-1200nm on a clean alumina substrate, and polishing the surface of the metal tin film; 2, placing an anode which is the alumina substrate deposited with the metal tin film and a cathode which is a titanium sheet in an electrolyte solution, oxidizing by applying a 5-12V direct-current voltage on two ends of the cathode and the anode to form an oxide film of tin, cleaning the surface of the oxide film of tin with deionized water, and naturally drying; 3, carrying out thermal treatment of the oxide film of tin to obtain a tin oxide film; and 4, coating a silver slurry on the tin oxide film, and sintering to obtain the gas-sensitive element. The preparation method adopts anode oxidation before the film sintering to form a porous structure is benefit for the gas diffusion and the gas adsorption, so the contact surface of a material with a gas is increased, and the sensitivity and the response time of the gas-sensitive element are improved.
Owner:HUAZHONG UNIV OF SCI & TECH
Method for preparing antimony-doping tin oxide thin film carrier material
InactiveCN101235480AGood chemical stabilityImprove surface hydrophilicityVacuum evaporation coatingSputtering coatingTin dioxideVolumetric Mass Density
The invention relates to a method for preparing antimony doped tin dioxide thin film carrier material and the carrier material which is prepared is suitable for gene chips of an unmarked electrical measuring technique. The method comprises: using antimony doped tin dioxide to sputter target material, utilizing a magnetron sputtering method to prepare antimony doped tin dioxide thin film, then, hydroxylating, amino-silanizating, and aldehydizing the thin film to modify, and preparing the antimony doped tin dioxide thin film carrier material which is modified by aldehyde groups and used for the gene chips. The carrier material which is prepared through adopting the method of the invention is characterized in that the surface is flat and compact, the thickness is even, the concentration of active groups is high, the hydrophilic property is good, the chemical stability is high, the electrical resistivity is low, and the like, the carrier material can realize unmarked electrical measurement, recognition and analysis for the high sensitivity, the high reliability and the strong specificity of biological signals, and the material is very suitable for the carrier material of the gene chips of the unmarked electrical measuring technique. The method of the invention is also characterized in that the preparing technique is simple and easy to do, the cost is low, and industrial production is easily realized.
Owner:KUNMING UNIV OF SCI & TECH
Spaying method for large-area double-sided and fluorine-doped tin oxide transparent conductive film
InactiveCN102372442AOvercome serious pollution problemsCost-effectiveTin thin filmsMaterials science
The invention discloses a spraying method for a large-area double-sided and fluorine-doped tin oxide transparent conductive film. In the spraying method, a large amount of fog drops containing a fluorine-doped tin oxide precursor spraying liquid are sprayed into a coating chamber by adopting a spraying pyrolysis preparation technology; the fog drops are driven by an exhaust fan to regularly and directionally move; under the action of high temperature, the fog drops are subjected to solvent volatilization, a thermal decompose reaction of solute and the like and then uniformly form nucleuses and grow on the front side and the back side of a vertically-arranged glass matrix to form the fluorine-doped tin oxide film; residual waste gas is exhausted from an exhaust system; and finally, the prepared double-sided and fluorine-doped tin oxide film is cooled under strong wind to finish the preparation process of the film. The double-sided and fluorine-doped tin oxide film prepared by the method has the advantages of low cost, small pollution to a film surface, high transmissivity of visible light and infrared reflectivity and favorable conduction performance; meanwhile, since the spraying pyrolysis preparation technology is adopted, the process is simple and feasible, the preparation efficiency of the film is high and the film can be prepared in double sides and a large area.
Owner:XIAN UNIV OF TECH
Tin amino-alkoxide complexes and process for preparing thereof
ActiveUS8030507B2Increase relative volatilityQuality improvementTin organic compoundsNanostructure manufactureHalogenCoordination complex
Owner:KOREA RES INST OF CHEM TECH
Nano-grade porous tin dioxide film gas sensitive material, and preparation method and application thereof
InactiveCN106395739ALow gas sensitivity detection limitHigh gas responsivityMaterial nanotechnologyIndividual molecule manipulationTin dioxideLow nitrogen
The invention discloses a preparation method of a nano-grade porous tin dioxide film gas sensitive material. According to the invention, nano-grade porous gold is adopted as a growth template, and tin dioxide is deposited with an atomic layer deposition technology; and through annealing crystallization and growth template aqua regia corrosion processes, the double-linked tin dioxide gas sensitive film with nano-grade porous gold is finally obtained. The nano-grade porous tin dioxide film gas sensitive material prepared by the preparation method provided by the invention can be used for detecting nitrogen dioxide, and has an optimal working temperature of 300 DEG C. The material has ultra-low nitrogen dioxide gas sensitive detection limit and ultrahigh gas sensitive responsivity.
Owner:SHANGHAI NORMAL UNIVERSITY
Water-resistant perovskite photovoltaic material and preparation method therefor
ActiveCN105489765AAvoid failureImprove waterproof performanceFinal product manufactureSolid-state devicesWater resistantMoisture
The invention provides a water-resistant perovskite photovoltaic material used for a solar cell and used as a light-absorbing layer of the solar cell. The surface of the perovskite material is coated with a nanometer stannic oxide thin film, so that the perovskite material can be effectively prevented from being degraded by moisture in the air to result in battery failure, and the water repellency and the stability of the perovskite material are improved; meanwhile, the light-absorbing property of the perovskite material can be reinforced by the nanometer stannic oxide thin film, and the photoelectric conversion efficiency can be improved; and when the water-resistant perovskite photovoltaic material provided by the invention is used for assembling a solar cell, the photoelectric conversion efficiency of the solar cell can reach 12.8%.
Owner:深圳市德朗能电子科技有限公司
Technique for treating organic substance difficukt to be degradated in water through opto-electronic electrode
InactiveCN1760139AEfficient degradationMass transfer coordinationWater/sewage treatment by irradiationWater/sewage treatment by electrochemical methodsUltraviolet lightsOxygen
A process for treating the organic substance difficult to degradate in water by photoelectric electrode features that the Sb doped SnO2 film electrode used as the photoelectric electrode and the air oxygen electrode as cathode are parallelly used and vertically arranged in photoelectrically catalytic reactor and the 365-nm ultraviolet light source is arranged in the center of said reactor or at its outside. Its advantage is the combination of oxidizing action of anode with reducing action of cathode to remove said organic substance from water thoroughly.
Owner:TAIYUAN UNIV OF TECH
Solar battery adopting multifunctional transparent electrode and preparation method of solar battery
PendingCN107658387ARealize large-scale industrial productionSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringSolar battery
Disclosed is a solar battery adopting a multifunctional transparent electrode. The solar battery comprises a tin oxide thin film layer which is used as an electrode layer and an electron transport layer as well, a metal electrode layer, and a perovskite active layer arranged between the tin oxide thin film layer and the metal electrode layer. The solar battery also comprises a hole transport layerarranged between the perovskite active layer and the metal electrode layer. The invention also provides a preparation method of the solar battery adopting the multifunctional transparent electrode. By taking one layer of multifunctional tin oxide nanomaterial thin film as the transparent electrode layer and the electron transport layer (electron extraction layer) in the perovskite battery structure, the perovskite solar battery is established on the basis, so that the battery structure is simplified and the preparation cost is lowered.
Owner:CHINA HUANENG GRP CO LTD +1
Nano-whisker growth and films
Methods for making tin oxide films comprising nano-whiskers comprises providing a solution comprising a tin precursor and a solvent; preparing aerosol droplets of the solution; and applying the aerosol droplets to a heated glass substrate, converting the tin chloride to tin oxide to form a tin oxide film on the glass substrate, wherein the tin oxide film comprises nano-whiskers.
Owner:CORNING INC
Germanium tin oxide thin films for uncooled infrared detectors
ActiveUS10337927B1High TCR valueReduce noise valueSemiconductor/solid-state device manufacturingPyrometry using electric radation detectorsExtinctionRefractive index
Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Oxide thin films mixed with Sn (Ge—Sn—O) for uncooled infrared detection. Ge—Sn—O were deposited by co-sputtering of Sn and Ge targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Sn—O was most sensitive in the wavelength ranges between 1.0-3.0 μm. The transmission data was further used to determine the optical energy band gap (0.678 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (1.4802×105 m-1-1.0097×107 m−1), refractive index (1.242-1.350), and the extinction coefficient (0.3255-8.010) for the wavelength ranges between 1.0-3.0 μm. The thin film's resistivity measured by the four point probe was found to be 4.55 Ω-cm and TCR was in the range of −2.56-−2.25 (% / K) in the temperature range 292-312K. In light of these results it can be shown that this thin film is in keeping with the current standards while also being more cost and time effective.
Owner:RANA MUKTI +1
Preparation method of perovskite solar cell module
ActiveCN108389975ASolve the problem of effective concatenationMeet the needs of industrial productionSolid-state devicesSemiconductor/solid-state device manufacturingThermal sprayingPerovskite solar cell
Owner:CHANGZHOU UNIV +1
Cerium-antimony codoped tin oxide thin film, powder and preparation method thereof
The invention discloses a cerium-antimony codoped tin oxide thin film and a preparation method thereof, and the thin film comprises cerium oxide, antimony oxide and tin oxide, wherein the ratio of the amount-of-substance ratio of cerium element to antimony element to tin element is 1-4: 1-4: 100. The invention further discloses cerium-antimony codoped tin oxide powder and the preparation method thereof, and the powder comprises the cerium oxide, the antimony oxide and the tin oxide, wherein the amount-of-substance ratio of the cerium element to the antimony element to the tin element is 1-4: 1-4: 100. The preparation method of the cerium-antimony codoped tin oxide thin film / powder, disclosed by the invention is simple, low in cost, simple in production process and suitable for production by various enterprises; and the prepared cerium-antimony codoped tin oxide thin film is plated on a white glass base material, the shielding efficiency of obtained film-coated glass at 300-380nm is above 60%, and the transmittance at 380-780nm is 85-92% (used white glass is only 85%).
Owner:广东泰祥建材实业发展有限公司 +1
Film layer, manufacturing method thereof and photovoltaic device with film layer
ActiveCN101621087AImprove controllabilityIncrease deposition rateFinal product manufactureSemiconductor devicesElectrically conductiveTin oxide thin films
The invention discloses a film layer, a manufacturing method thereof and a photovoltaic device with the film layer, which belong to the technical field of solar cells. By using magnetron sputtering technology, a laminated structure of a titanium oxide film, a silicon oxide film and a tin oxide film which are orderly deposited on the surface of a substrate is used as a front electrode of a transparent conductive oxide, so that the front electrode of the laminated transparent conductive oxide can be manufactured in multi-chamber sputtering equipment on line to improve the production efficiency and reduce the manufacturing cost.
Owner:杨与胜 +1
Preparation method of novel composite flat plate electric heating film
InactiveCN109862631AThickness is easy to controlUniform structureOhmic-resistance electrodesSpecial surfacesAcrylic resinLow voltage
The invention discloses a preparation method of a novel composite flat plate electric heating film. The method comprises the steps of dissolving butyltin trichloride (MBTC), SbCl3 and NH4F which are used as a precursor in a solvent prepared from ethyl alcohol and water according to a proportion so as to use as a first precursor liquid; dispersing silver nanoparticle in deionized water to use as asecond precursor liquid; preparing acrylic resin to form a template agent, dropwise adding the template agent onto a quartz substrate, and drying to form a chapped template network; dropwise adding and spin-coating the second precursor liquid onto a substrate for forming a template, and performing annealing after drying; depositing the first precursor liquid onto the substrate and performing thermal processing by a method of ultrasonic spray pyrolysis; and fabricating an electrode to from an electric heating film device. The method has the advantages that the novel composite flat plate electric heating film has relatively high oxidization-resistant performance by a tin oxide thin film at the outermost layer, and stable film layer resistance during the application process can be maintained;the silver nanoparticle has excellent electric and heat conversion efficiency, a relatively high temperature can be achieved under a low voltage; and meanwhile, the novel composite flat plate electric heating film has excellent light transmittance with the adoption of the quartz substrate, and the light transmittance reaches 80% or above.
Owner:ZHEJIANG UNIV
Tantalum doping tin oxide thin film carrier material for gene chip
InactiveCN101265501AImprove conductivityGood chemical stabilityMicrobiological testing/measurementMaterial analysis by electric/magnetic meansHigh densityChemical stability
The invention relates to thin-film carrier material of tantalum-doped jewellers putty. The material comprises simple glass slide or monocrystalline silicon chip substrate material, thin films of tantalum-doped jewellers putty and an aldehyde group activity modificatory coat; and composition of the thin films of tantalum-doped jewellers putty has the following mass percent that Ta is between 0.8 percent and 8.2 percent; Sn is between 70.9 percent and 78 percent; and O is between 20.9 percent and 21.2 percent. The provided carrier material has the characteristics that the surface is flat and compact; the thickness is symmetrical; the active group has high density; the hydrophilicity is good; the chemical durability is high; the specific resistance is low and the organism compatibility is good, etc. The no marks electrics detecting, discrimination and analysis with high-sensitivity, high reliability and strong specificity can be realized on a biological signal. The carrier material adapts to a gene chip adopting the no marks electrics detecting technology. The thin-film carrier material of tantalum-doped jewellers putty also has the advantages that the preparation technology is simple and easy, the cost is low, and the industrialization production is easy to be realized, etc.
Owner:KUNMING UNIV OF SCI & TECH
Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof
The invention particularly provides a high-performance humidity sensor which comprises n-n homotype heterojunction materials formed by a stannic oxide thin film and a silicon substrate covered with a silicon-dioxide layer and takes palladium as a catalytic layer. A preparation method of the resistance-type humidity sensor comprises the steps that the stannic oxide thin film is grown on the silicon substrate covered with silicon dioxide through a sputtering method firstly; then the palladium catalytic layer with the area smaller than the stannic oxide film is prepared on the surface of the thin film through a mask film and the sputtering method. According to the resistance-type humidity sensor based on the Pd / SnO2 / Si heterojunction and the preparation method thereof, the Pd / SnO2 / Si heterojunction humidity sensor is prepared by means of the catalytic effect of the palladium film and the amplification effect of the stannic oxide-silicon heterojunction, the technology is simple, the cost is low, a heater is not needed, the humidity sensor can work at the room temperature, the humidity sensor has the advantages of being low in energy consumption, high in sensitivity and short in response and recovery time, the good detection property to water vapor is achieved, and important application prospect is achieved.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
FTO thin film preparation using magnetron sputtering deposition with pure tin target
InactiveUS20130243967A1Reduce manufacturing costQuality improvementVacuum evaporation coatingSputtering coatingReactive gasIngot
A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the purity of the tin target, and the step of applying reactive gases containing F atoms (CF4) and oxygen (O2) for enabling tetrafluoromethane (CF4) to be dissociated by the generated plasma into fluorine ions and excited fluorine atoms for deposition with tin ions from the tin target on a substrate to form a thin film of fluorine-doped tin oxide on the substrate.
Owner:NAT CENT UNIV
Bipolar resistive access memory and preparation method thereof
InactiveCN103199195AObvious rectification effectImprove conductivityElectrical apparatusDigital storagePlatinumEngineering
The invention discloses a bipolar resistive access memory and a preparation method thereof. The bipolar resistive access memory comprises an insulating substrate, an upper electrode film, a lower electrode film, wherein a resistive layer material is arranged between the upper electrode film and the lower electrode film. The bipolar resistive access memory is characterized in that the upper electrode film is a film made of one of platinum, copper or gold, the lower electrode film is a fluorine-doped tin oxide film, and the resistive layer material is an alpha-Fe2O3 polycrystalline film; and the structure of the memory is made of Pt or Cu or Au / alpha-Fe2O3 / FTO. The bipolar resistive access memory has the advantages of small size, simple structure, no volatilization, quick read-write availability, low working voltage, low energy-consumption, no moving part, no destructive read out and the like.
Owner:HEBEI UNIVERSITY
Novel tin amino-alkoxide complexes and process for preparing thereof
ActiveCN101538277AIncrease relative volatilityImprove thermal stabilityNanostructure manufactureTin organic compoundsOrganic chemistryPolymer chemistry
Owner:KOREA RES INST OF CHEM TECH
Ultraviolet detector based on palladium/tin dioxide/silicon heterojunction and preparation method thereof
PendingCN105244406ASimple processEasy to integrateFinal product manufactureSemiconductor devicesTin dioxideHeterojunction
The invention particularly provides a p-n heterotypic heterojunction material formed by a nanometer tin dioxide thin film and a silicon substrate, and a high performance ultraviolet detector using palladium as a catalyst layer. The tin dioxide thin film grows on the silicon substrate through a sputtering method. Mask and sputtering methods are used to prepare the palladium catalyst layer whose area is smaller than the area of the tin oxide film on the surface of the thin film. According to the invention, the palladium / tin dioxide / silicon heterojunction hydrogen ultraviolet detector which is prepared through the catalytic effect of the palladium film and the amplification effect of tin dioxide / silicon heterojunction has the advantages of simple process, low cost, low energy consumption, high sensitivity and fast response and recovery, does not need a heater, can work under room temperature, can well detect ultraviolet, and has an important application prospect.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)
Optical fiber methane sensor based on graphene sensitivity enhancing and preparation method thereof
ActiveCN106769890AHigh resistivityHigh refractive indexPolarisation-affecting propertiesFiberAlcohol
The invention discloses an optical fiber methane sensor based on graphene sensitivity enhancing and a preparation method thereof. The optical fiber methane sensor based on graphene sensitivity enhancing comprises a side polishing optical fiber, wherein the surface of the side polishing optical fiber exposing a fiber core is coated with a graphene doped tin oxide film. The preparation method comprises the following steps: adding graphene into a tin salt alcohol solution, mixing, and aging to obtain a graphene doped tin oxide film solution; and coating the tin oxide film solution on the surface of the side polishing optical fiber exposing the fiber core. The sensor provided by the invention has favorable methane sensing property and high sensitivity.
Owner:DEZHOU UNIV
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