69 results about "Tin oxide thin films" patented technology

The invention relates to a rabbit meat freshness detection method based on an electronic nose technology. The volatile gas release mode of the rabbit meat under different storage conditions including temperature, humidity and time is analyzed through experiments, and key putrefying gas including dimethylamine, hydrogen sulfide and aldehydes and the concentration change trend are recognized; a metal oxide semiconductor (MOS) or an electrochemical sensor matched with the gas is screened according to the identified main decay gas, and a sensitive material means comprising a tin oxide thin film doped with platinum is optimized; a response matrix of different sensors to target gas is established through experiments, and a multi-sensor signal fusion algorithm is optimized; a temperature and humidity sensor is introduced, and environmental noise correction is performed in combination with odor signals; adopting a convolutional neural network feature extraction method to extract nonlinear features associated with the rabbit meat decay stage; docking the extracted smell features with the dynamic distribution model, and unifying the quantization dimension through a feature standardization algorithm; and correcting the predicted corruption trend in real time in combination with a smell distribution dynamic model.

Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

The invention provides a preparation method of a fluorine-doped tin oxide film. The preparation method comprises the following steps: placing a substrate in a deposition device; and carrying out at least one deposition treatment, wherein each deposition treatment independently comprises at least one tin oxide film sub-deposition treatment and at least one fluoride sub-deposition treatment. By changing the deposition treatment times, the tin oxide film sub-deposition times and the fluoride sub-deposition treatment times, the thickness of the fluorine-doped tin oxide film can be accurately regulated and controlled, the uniformity of the film is good, and the thickness difference is small.

Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

The invention relates to a perovskite / crystalline silicon laminated solar cell structure taking a tin dioxide thin film as a composite layer and a preparation method of the perovskite / crystalline silicon laminated solar cell structure, and belongs to the technical field of photovoltaics. According to the perovskite / crystalline silicon laminated solar cell structure, the tin dioxide thin film is used as a composite layer, so that the cost of cell preparation is reduced; in the preparation method of the perovskite / crystalline silicon laminated solar cell, the composite layer and the electron transport layer can adopt the same preparation method, so that the equipment cost in the preparation process is reduced; the perovskite / crystalline silicon laminated solar cell obtained by the cell structure and the preparation method provided by the invention is relatively low in preparation cost and relatively high in photoelectric conversion efficiency.

A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

The invention provides a tin dioxide transistor biosensor, a preparation method thereof and a cortisol concentration detection method. According to the tin dioxide transistor biosensor, the tin dioxide thin film layer is used as a channel material of the transistor to establish the activation layer; a channel is functionalized by using the PMMAA material layer to form a carboxylic acid functionalized activated interface, and meanwhile, the biocompatibility of the interface can be increased, the tin dioxide film is protected from being invaded and disturbed by the external environment, and the specificity and sensitivity of the tin dioxide transistor are improved; and after the target substance is tested on the tin dioxide thin film transistor, the recycled tin dioxide thin film transistor can be obtained again by washing off the PMMAA material layer on the tin dioxide thin film layer. According to the cortisol concentration detection method disclosed by the invention, along with the change of the concentration of the target substance cortisol, the cortisol concentration detection method has good linearity at 1-106pg / mL, and the detection limit is as low as fg / mL level.

The invention relates to a perovskite solar cell and a preparation method and application thereof, in the perovskite solar cell, a buffer layer is arranged between an electron transport layer and a top electrode layer; the buffer layer comprises a tin oxide thin film doped with metal oxide, and the metal oxide comprises any one of aluminum oxide or indium oxide. The perovskite solar cell provided by the invention adopts the tin oxide doped with the specific metal oxide as the buffer layer, through doping of the metal oxide, the structure defect of the tin oxide thin film is reduced, the quality and performance of the buffer layer are improved, the buffer layer with excellent quality and performance is arranged between the electron transport layer and the top electrode layer, and the performance of the solar cell is improved. The morphology and the structure of the perovskite solar cell are stabilized, and the electrochemical performance of the perovskite solar cell is improved.

Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)

Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.

The present invention discloses a process method for improving the bonding performance of a thermally evaporated tin oxide electrothermal film, belonging to the technical field of thin film preparation. The feature of this method is to add an auxiliary tube with the same diameter as the tube to be evaporated at both the upper and lower ends of the tube to be evaporated, and the length of the auxiliary tube is in a certain proportion to the length of the tube to be evaporated; and the tin oxide thin film is evaporated in a way of high temperature first and then low temperature. The present invention uses the method of parallel operation of the auxiliary tube process and the high-low temperature evaporation process, significantly improving the bonding performance of the thermally evaporated tin oxide electrothermal film and ensuring the power stability of the tin oxide electrothermal film during use.

This invention discloses a transparent zinc tin oxide (ZTO) electrothermal film comprising zinc oxide and tin oxide in a molar ratio of 6:4 to 8:2, with a film thickness of 50–200 nm. The film exhibits a transmittance ≥85% at 550 nm, a sheet resistance of 10–50 Ω / □, and resistivity changes of no more than 5% and 8% after 1000 h of energization at 100°C and 100 cycles at -40°C to 80°C, respectively. This invention also discloses a transparent electrothermal material containing this film, a method for preparing the material using roll-to-roll magnetron sputtering, and its application in transparent heating devices such as architectural glass, automotive windshields, electronic display panels, and medical equipment. This invention replaces expensive In with low-cost Zn / Sn, and through optimized target ratios, roll-to-roll sputtering in an oxygen-containing sputtering atmosphere, and an oxygen-containing atmosphere annealing process, achieves a balance between low cost, high electrothermal stability, high transmittance, and easy industrial mass production of the transparent electrothermal material.

The invention provides a solar cell and a preparation method thereof. The method for preparing the solar cell comprises the following steps: forming a tin dioxide thin film on one side of the front surface of a silicon substrate; performing hydrogen plasma treatment on the tin dioxide thin film; and after the hydrogen plasma treatment, annealing treatment is carried out on the silicon substrate on which the tin dioxide thin film is formed, and the annealing treatment is carried out in a nitrogen trifluoride-containing gas environment. Therefore, the conductivity of the tin dioxide thin film on one side of the front surface of the silicon substrate can be improved, and the performance of the solar cell can be improved.

There is described a thin-film transistor (TFT) and a method for production thereof. In a preferred embodiment, the TFT comprises: a substrate; a source disposed at the substrate; a drain disposed at the substrate; a gate; and a thin film of tin oxide disposed within the influence of the gate between the source and the drain, the thin film of tin oxide to form a carrier channel between the source and the drain when sufficient voltage is applied at the gate. Advantageously, in a preferred embodiment, the thin film of tin oxide has carrier concentration of less than or equal to 1.0×1019 cm-3 and a mobility of greater than or equal to 100 cm2 / V⋅s.

The invention provides a tin oxide thin film and a preparation method and application thereof, relates to the technical field of solar cells, and can improve the proportion of tetravalent tin in the tin oxide thin film and enable the energy level of the tin oxide thin film to be better matched with perovskite, thereby improving the performance of a device. According to the preparation method of the tin oxide thin film, the tin oxide thin film is deposited on a substrate through an atomic layer deposition technology, and in the deposition process, a first oxygen source and a second oxygen source are continuously used as oxygen sources to react with a tin metal organic source, the first oxygen source is selected from one or more of water, hydrogen peroxide and oxygen, the process temperature of the reaction between the second oxygen source and the tin metal organic source is less than 100 DEG C, the oxidation intensity of the second oxygen source to tin metal is greater than that of the first oxygen source, and the generated product is tetravalent tin oxide.

The application discloses a preparation method of a tin oxide electron transport layer and application of the tin oxide electron transport layer in a perovskite solar module, and belongs to the technical field of new energy photovoltaic materials. The steps are as follows: 1) providing a tin precursor solution for preparing tin dioxide by a bivalent tin chemical bath deposition, and adding a first additive and a second additive to obtain a chemical bath deposition solution; wherein the first additive is a molecule with a phosphoric acid group and a choline group; and the second additive is a polyanion molecule with high electronegativity; 2) immersing a conductive substrate into the chemical bath deposition solution to perform chemical bath deposition; and 3) finally performing cleaning and heat treatment to obtain the tin oxide electron transport layer. The application can obtain a large-area, dense and uniform tin oxide film, and the tin oxide film has excellent optical transmittance, electrical uniformity and interface charge transport capacity, is used in the perovskite solar module, and significantly improves photoelectric conversion efficiency and a fill factor, reduces performance attenuation in an area amplification process, and has excellent comprehensive performance.

The present application relates to the field of materials, and in particular to a preparation method for a fluorine-doped tin oxide target material. A powder mixture of raw materials is press-formed and is then sintered. The powder mixture comprises 70 wt.%-99.8 wt.% of SnO2, 0.1wt.%-10 wt.% of metal fluoride, 0 wt.%-10 wt.% of metal oxide, and 0 wt.%-10 wt.% of sintering aid. The melting point of the metal fluoride is greater than 800°C. According to the preparation method for the fluorine-doped tin oxide target material provided by the present application, the metal fluoride having a high melting point (greater than 800°C) is used for replacing stannous fluoride to serve as a fluorine source of a fluorine-doped tin oxide target material, thereby fundamentally solving the problem of metal fluoride decomposition in the high-temperature sintering process of the target material, improving the control accuracy of components of the target material, and effectively improving the photoelectric performance of a fluorine-doped tin oxide film.

The invention relates to a contact switch assembly production device, which comprises a clamping assembly, and is characterized in that the clamping assembly is used for clamping a contact switch and transferring the contact switch among a tin bonding assembly, a polishing assembly and a cleaning assembly; the vacuum adsorption assembly is used for clamping the contact switch and transferring the contact switch among the cleaning assembly, the throwing-drying assembly and the transferring assembly. The clamping assembly can drive the clamped contact switch to be transferred among different components such as the tin pick-up assembly, the polishing assembly and the cleaning assembly. The tin pick-up assembly scrapes off a layer of tin oxide film formed by oxidation of the upper surface of the tin liquid through a scraper. By means of the structural design, the tin liquid filling device can be widely applied to switch assembly lines of various types and the like, and is particularly suitable for occasions where operation tasks need to be rapidly replaced or diversified products need to be processed.

To provide a method for removing a tin oxide deposit from an inner surface of a reactor chamber or from a substrate in the reactor chamber.SOLUTION: A method includes the step of introducing an etchant gas into a reactor chamber containing a tin oxide deposit. The etchant gas is a compound of a general formula A3OmXn. (In the formula, A3 is selected from a group consisting of C, N, and S. O is oxygen. Each X is independently selected from a group consisting of halogens. Subscripts m and n are greater than zero.) The method also includes the steps of: either before or after introduction, activating the etchant gas; allowing an etching reaction to proceed between the activated etchant gas and the tin oxide deposit; and evacuating the etchant gas together with gaseous products of the etching reaction.SELECTED DRAWING: None

The invention belongs to the technical field of solar cells, and relates to a preparation method, a product and application of a strong-polarity tin oxide nano material. A Meerwein reagent is used for carrying out ligand modification on an organic amine and organic acid modified SnO2 nano material to obtain a nano material modified by one or more ligands of tetrafluoroborate BF4 <->, Me3O <-> and Et3O <->, so that the nano material can be dispersed in a strong-polarity organic solvent and then is spin-coated or blade-coated on an ITO / FTO (indium tin oxide / fluorine-doped tin oxide) substrate or a perovskite layer; the obtained tin oxide film has relatively good conductivity and leveling property, excellent film-forming property and relatively good spreadability; meanwhile, the tin oxide organic strong-polarity dispersion liquid has long-term stability in the aspect of storage stability; and the material has excellent light conversion efficiency in the aspect of device performance.

This invention discloses a photodetector based on PVA-modulated SnO conductivity type, its fabrication method, and its applications. The detector comprises a silicon substrate, a polyvinyl alcohol (PVA) interface modulation layer, an N-type tin oxide channel layer, and an electrode layer, stacked sequentially. The fabrication method involves spin-coating a PVA thin film onto the silicon substrate and drying it. A tin oxide thin film is then deposited by magnetron sputtering, followed by high-temperature annealing in air at 520-680°C. Finally, the electrodes are fabricated. This invention utilizes the synergistic effect of PVA thermal decomposition and high-temperature annealing to transform SnO from an intrinsic P-type stable type to a high-performance N-type. The resulting detector exhibits high on / off ratio, high mobility, fast photoresponse, and low dark current. Furthermore, the process is simple and low-cost, demonstrating promising application prospects.

The invention provides a tantalum-doped tin oxide thin film, a preparation method thereof and a photoelectric device, the preparation method comprises the following steps: magnetron sputtering treatment is carried out on a tantalum-doped tin oxide target material, the tantalum-doped tin oxide thin film is prepared, the sputtering atmosphere of magnetron sputtering comprises argon, oxygen and hydrogen, and the tantalum-doped tin oxide thin film is prepared; the sputtering atmosphere flows into the gas volume of the sputtering chamber in unit time, the volume ratio of the argon gas is 95%-97%, the volume ratio of the oxygen gas is 1%-2%, and the volume ratio of the hydrogen gas is 1%-4%. The preparation method provided by the invention is relatively low in preparation process cost, and the prepared tantalum-doped tin oxide thin film has good photoelectric properties.

The invention discloses a tin oxide thin film atomic layer deposition method for a perovskite laminated cell. The perovskite laminated cell sequentially comprises an ITO conductive substrate layer, a first hole transport layer, a wide-band-gap perovskite light absorption layer, a first electron transport layer, a gradient tin oxide tunneling layer, a gold electrode composite layer, a second hole transport layer, a narrow-band-gap perovskite light absorption layer, a second electron transport layer, a gradient tin oxide barrier layer and a metal electrode from bottom to top. The atomic layer deposition process parameters of the gradient tin oxide tunneling layer and the gradient tin oxide barrier layer are regulated and controlled through at least one of gradient temperature deposition and gradient purging time regulation and control; a multi-layer tin oxide thin film structure with carrier concentration gradient electrical characteristics is constructed on the nanoscale; gradient regulation and control of the electrical performance of the perovskite laminated cell can be realized, and the multi-interface requirement of the laminated cell can be met.

The invention discloses a preparation method and application of a tin oxide thin film through staged chemical bath deposition, and the preparation method comprises the following steps: placing a conductive substrate at the bottom of a first reaction container in a manner that the conductive surface faces downwards, and then placing a second reaction container in the first reaction container, the second reaction container is filled with a tin oxide precursor solution, and then the first reaction container is sealed and heated; then inclining the first reaction container, enabling the heated tin oxide precursor solution to flow into the first reaction container until the conductive substrate is immersed, and keeping the temperature; and taking out, cleaning, blow-drying, and annealing to obtain the deposited tin oxide film on the conductive substrate. According to the preparation method, the thickness, the density, the morphology and the energy level structure associated with the time parameters can be regulated and controlled at the same time, so that the quality of the tin oxide thin film is improved. When the prepared tin oxide thin film is applied to an electron transport layer of a perovskite solar cell, a device with excellent photovoltaic performance can be prepared.

The invention discloses a method for removing a tin oxide film layer and application of the tin oxide film layer in processing defective solar cells. The method for removing the tin oxide film layer comprises the steps that the tin oxide film layer is subjected to immersion cleaning through a mixed acid solution, and the mixed acid solution comprises, by mass concentration, 0.005%-0.5% of HCl, 0.1%-2% of HF and more than 50 ppm of ozone. The method is low in cost, low in bad loss, good in tin oxide thin film removing effect, high in efficiency, not prone to introduction of other impurities and impurity gas, high in safety and reliability, convenient for mass production and the like, and is suitable for reworking treatment of bad pieces of heterojunction solar cells and also suitable for reworking treatment of the bad pieces of the heterojunction solar cells. And the method is also suitable for processing other types of battery pieces or materials with tin oxide film layers.

In this work, a new method for synthesizing lead iodide (PbI₂) thin films was developed using the chemical bath deposition (CBD) method, which consisted of two stages. In the first stage, tin oxide films were synthesized to act as a seed layer, allowing for better adhesion of the film to be deposited. The second stage consisted of synthesizing the lead iodide films. Finally, heat treatments (100, 150°C, 200°C, 250°C, 270°C) were performed to promote polytype transitions in the material and to study the effect of these structures on the optical, chemical, and structural properties of the material. The direct influence of the heat treatment on the induction of polytypes was determined, and these polytypes clearly influence the structure and chemical composition of the resulting films.The results showed that the formulation sequence is crucial for generating a heterogeneous mechanism, which leads to the formation of lead iodide films. The samples obtained exhibited a characteristic yellow color of lead iodide films. Structural and compositional characterization using X-ray diffraction and transmission electron microscopy established that the films, both with and without heat treatment, exhibit a 2H and 4H polytypical structure. Furthermore, an increase in the contribution of the 4H structure and crystallinity was observed with increasing heat treatment temperature, a result consistent with the hypothesis and objectives of the project.Using Raman microscopy, we were able to identify the vibrational modes of the films with and without heat treatment, which correspond to the vibrational modes of 2H and 4H polytypical structures. Finally, their optical properties were measured using UV-Vis optical microscopy, establishing that temperature does not have a significant effect on the onset of fundamental absorption of the material. Applying the Kubelka-Munk method, we were able to determine the band gap for the lead iodide films, Eg 2.4 eV.

The invention relates to the field of materials, in particular to a preparation method of a fluorine-doped tin oxide target material. Carrying out compression molding on the powder mixture of the raw materials and sintering; the powder mixture comprises the following components in percentage by weight: 70 to 99.9 percent of SnO2 and 0.1 to 10 percent of metal fluoride; 0 wt.% to 10 wt.% of a metal oxide; 0 wt.% to 10 wt.% of a sintering aid; the melting point of the metal fluoride is greater than 800 DEG C. According to the preparation method of the fluorine-doped tin oxide target material provided by the invention, a high-melting-point (gt; compared with the prior art, the metal fluoride with high temperature (800 DEG C) is used as a fluorine source of the fluorine-doped tin oxide target instead of stannous fluoride, so that the problem of decomposition of the metal fluoride in the high-temperature sintering process of the target is fundamentally solved, the control precision of the components of the target is improved, and the photoelectric property of the fluorine-doped tin oxide film can be effectively improved.

The invention provides a P-type stannous oxide thin film. The P-type stannous oxide thin film is obtained by carrying out magnetron sputtering on a Sn target material with the Te content of 1-10at%, packaging and annealing. The invention also provides a thin film transistor comprising the P-type stannous oxide and an inverter comprising the thin film transistor. Meanwhile, the invention also provides a preparation method of the thin film transistor and the phase inverter.

The invention discloses a method for improving the crystallization quality of a perovskite thin film, and belongs to the technical field of solar cells. The method for improving the crystallization quality of the perovskite thin film comprises the following steps: preparing a buried interface through atomic layer deposition; adding N-(6-aminohexyl)-1-naphthalenesulfonamide hydrochloride into the perovskite precursor solution, and then depositing the perovskite precursor solution on a buried interface to obtain a perovskite thin film; a buried bottom interface is an aluminum oxide film, a tin oxide film, a zinc oxide film, an indium oxide film or a titanium oxide film; the pulse time of the metal source in the atomic layer deposition is 0.01-0.02 s, and the pulse time of the oxidation source in the atomic layer deposition is 0.001-1 s. According to the invention, a flat buried interface is prepared by using an atomic layer deposition technology, N-(6-aminohexyl)-1-naphthalene sulfonamide hydrochloride is added into a perovskite precursor solution, and the interface and a body have a synergistic effect to jointly regulate and control the nucleation and crystallization process of perovskite.