23 results about "Tin oxide thin films" patented technology

Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)

Provided are an organometallic compound useful for deposition of high purity tin oxide, and a composition containing the compound. 【Solution means】Formula II: Sn(NR 2 (CH2) n A 2 )2 (wherein A 2 is NR 2’ or O; R 2 group is H and an alkyl group and an aryl group having 1 to 10 carbon atoms; R 2’ group is H and an alkyl group or an acyl group and an aryl group having 1 to 10 carbon atoms; n is 2 or 3; optionally, NR 2 (CH2) n NR 2’ forms a cyclic structure) of an organometallic compound is provided.

There is described a thin-film transistor (TFT) and a method for production thereof. In a preferred embodiment, the TFT comprises: a substrate; a source disposed at the substrate; a drain disposed at the substrate; a gate; and a thin film of tin oxide disposed within the influence of the gate between the source and the drain, the thin film of tin oxide to form a carrier channel between the source and the drain when sufficient voltage is applied at the gate. Advantageously, in a preferred embodiment, the thin film of tin oxide has carrier concentration of less than or equal to 1.0×1019 cm-3 and a mobility of greater than or equal to 100 cm2 / V⋅s.

To provide a method for removing a tin oxide deposit from an inner surface of a reactor chamber or from a substrate in the reactor chamber.SOLUTION: A method includes the step of introducing an etchant gas into a reactor chamber containing a tin oxide deposit. The etchant gas is a compound of a general formula A3OmXn. (In the formula, A3 is selected from a group consisting of C, N, and S. O is oxygen. Each X is independently selected from a group consisting of halogens. Subscripts m and n are greater than zero.) The method also includes the steps of: either before or after introduction, activating the etchant gas; allowing an etching reaction to proceed between the activated etchant gas and the tin oxide deposit; and evacuating the etchant gas together with gaseous products of the etching reaction.SELECTED DRAWING: None

This invention discloses a photodetector based on PVA-modulated SnO conductivity type, its fabrication method, and its applications. The detector comprises a silicon substrate, a polyvinyl alcohol (PVA) interface modulation layer, an N-type tin oxide channel layer, and an electrode layer, stacked sequentially. The fabrication method involves spin-coating a PVA thin film onto the silicon substrate and drying it. A tin oxide thin film is then deposited by magnetron sputtering, followed by high-temperature annealing in air at 520-680°C. Finally, the electrodes are fabricated. This invention utilizes the synergistic effect of PVA thermal decomposition and high-temperature annealing to transform SnO from an intrinsic P-type stable type to a high-performance N-type. The resulting detector exhibits high on / off ratio, high mobility, fast photoresponse, and low dark current. Furthermore, the process is simple and low-cost, demonstrating promising application prospects.

The invention discloses a tin oxide thin film atomic layer deposition method for a perovskite laminated cell. The perovskite laminated cell sequentially comprises an ITO conductive substrate layer, a first hole transport layer, a wide-band-gap perovskite light absorption layer, a first electron transport layer, a gradient tin oxide tunneling layer, a gold electrode composite layer, a second hole transport layer, a narrow-band-gap perovskite light absorption layer, a second electron transport layer, a gradient tin oxide barrier layer and a metal electrode from bottom to top. The atomic layer deposition process parameters of the gradient tin oxide tunneling layer and the gradient tin oxide barrier layer are regulated and controlled through at least one of gradient temperature deposition and gradient purging time regulation and control; a multi-layer tin oxide thin film structure with carrier concentration gradient electrical characteristics is constructed on the nanoscale; gradient regulation and control of the electrical performance of the perovskite laminated cell can be realized, and the multi-interface requirement of the laminated cell can be met.

The invention discloses a method for removing a tin oxide film layer and application of the tin oxide film layer in processing defective solar cells. The method for removing the tin oxide film layer comprises the steps that the tin oxide film layer is subjected to immersion cleaning through a mixed acid solution, and the mixed acid solution comprises, by mass concentration, 0.005%-0.5% of HCl, 0.1%-2% of HF and more than 50 ppm of ozone. The method is low in cost, low in bad loss, good in tin oxide thin film removing effect, high in efficiency, not prone to introduction of other impurities and impurity gas, high in safety and reliability, convenient for mass production and the like, and is suitable for reworking treatment of bad pieces of heterojunction solar cells and also suitable for reworking treatment of the bad pieces of the heterojunction solar cells. And the method is also suitable for processing other types of battery pieces or materials with tin oxide film layers.

In this work, a new method for synthesizing lead iodide (PbI₂) thin films was developed using the chemical bath deposition (CBD) method, which consisted of two stages. In the first stage, tin oxide films were synthesized to act as a seed layer, allowing for better adhesion of the film to be deposited. The second stage consisted of synthesizing the lead iodide films. Finally, heat treatments (100, 150°C, 200°C, 250°C, 270°C) were performed to promote polytype transitions in the material and to study the effect of these structures on the optical, chemical, and structural properties of the material. The direct influence of the heat treatment on the induction of polytypes was determined, and these polytypes clearly influence the structure and chemical composition of the resulting films.The results showed that the formulation sequence is crucial for generating a heterogeneous mechanism, which leads to the formation of lead iodide films. The samples obtained exhibited a characteristic yellow color of lead iodide films. Structural and compositional characterization using X-ray diffraction and transmission electron microscopy established that the films, both with and without heat treatment, exhibit a 2H and 4H polytypical structure. Furthermore, an increase in the contribution of the 4H structure and crystallinity was observed with increasing heat treatment temperature, a result consistent with the hypothesis and objectives of the project.Using Raman microscopy, we were able to identify the vibrational modes of the films with and without heat treatment, which correspond to the vibrational modes of 2H and 4H polytypical structures. Finally, their optical properties were measured using UV-Vis optical microscopy, establishing that temperature does not have a significant effect on the onset of fundamental absorption of the material. Applying the Kubelka-Munk method, we were able to determine the band gap for the lead iodide films, Eg 2.4 eV.

The invention provides a P-type stannous oxide thin film. The P-type stannous oxide thin film is obtained by carrying out magnetron sputtering on a Sn target material with the Te content of 1-10at%, packaging and annealing. The invention also provides a thin film transistor comprising the P-type stannous oxide and an inverter comprising the thin film transistor. Meanwhile, the invention also provides a preparation method of the thin film transistor and the phase inverter.

The invention discloses a method for improving the crystallization quality of a perovskite thin film, and belongs to the technical field of solar cells. The method for improving the crystallization quality of the perovskite thin film comprises the following steps: preparing a buried interface through atomic layer deposition; adding N-(6-aminohexyl)-1-naphthalenesulfonamide hydrochloride into the perovskite precursor solution, and then depositing the perovskite precursor solution on a buried interface to obtain a perovskite thin film; a buried bottom interface is an aluminum oxide film, a tin oxide film, a zinc oxide film, an indium oxide film or a titanium oxide film; the pulse time of the metal source in the atomic layer deposition is 0.01-0.02 s, and the pulse time of the oxidation source in the atomic layer deposition is 0.001-1 s. According to the invention, a flat buried interface is prepared by using an atomic layer deposition technology, N-(6-aminohexyl)-1-naphthalene sulfonamide hydrochloride is added into a perovskite precursor solution, and the interface and a body have a synergistic effect to jointly regulate and control the nucleation and crystallization process of perovskite.

The invention provides a method for preparing a tin oxide thin film by chemical vapor deposition based on a dibutyltin diacetate precursor, which specifically comprises the following steps of: growing a transparent SnO epitaxial thin film on a sapphire substrate in a chemical vapor deposition reaction system by taking dibutyltin diacetate (DBTAC) as a precursor and taking high-purity oxygen (O) as carrier gas and reaction gas. The method comprises the following steps: (1) pretreating a sapphire substrate and placing the sapphire substrate in a constant-temperature area of a tubular furnace; (2) heating the DBTAC precursor to about 120 DEG C for volatilization, and conveying the DBTAC precursor to a position near the sapphire substrate (1.5-2 cm away from a gas inlet) through Ocarrier gas; and (3) controlling the reaction temperature to be 900-1000 DEG C, the pressure to be about 0.81 bar and the growth time to be 120 minutes to obtain the SnO2 film with good crystallinity and smooth surface. According to the invention, by optimizing the molar ratio of DBTAC to oxygen (1: 10-1: 20), carbon residue and visible light transmittance gt are effectively inhibited; the method is suitable for the fields of power semiconductor devices, transparent conductive films, gas sensors and the like.

The invention relates to a preparation method of a tin oxide film, and relates to the technical field of semiconductor materials, and the preparation method comprises the following steps: firstly carrying out tetra (dimethylamino) tin pulse on the surface of a substrate, then carrying out nitrogen first purging, then carrying out pulse by using an H2O2 solution, then carrying out nitrogen second purging, and then carrying out mixed gas pulse. And carrying out third purging with nitrogen, repeating the steps until the target thickness is reached, and carrying out annealing treatment on the deposited substrate to obtain the tin oxide thin film. Through the synergistic effect of different oxygen sources, the tin oxide film which is high in crystallinity, few in defect, excellent in electrical property and good in uniformity is prepared under the low-temperature condition, and therefore the comprehensive performance of the film is comprehensively improved.

[Problem] To easily produce p-type tin(II) oxide. [Solution] A first film, which is made of tin metal, and a second film, which is made of tin(IV) oxide, are alternately deposited to form a multilayer object, and the multilayer object is subjected to a heat treatment to produce p-type tin(II) oxide from the multilayer object.

The invention provides certain mixed Sn (II) amide / alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and / or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

The invention provides a fog chemical vapor deposition method for preparing a high-quality stannic oxide film and tantalum doping thereof, which comprises the following steps: taking sapphire as a substrate, taking stannous acetate as a tin source, taking ethanol / ethylene glycol and deionized water as solvents, and adding a proper amount of hydrochloric acid to promote the stannous acetate to dissolve; placing the prepared solution as a precursor into an atomizer container, placing a substrate at a certain position in a tubular furnace, heating the tubular furnace and preserving heat, atomizing the precursor solution in the heat preservation process, and transmitting the atomized precursor solution to the substrate through carrier gas to obtain the high-quality stannic oxide single crystal film. Tantalum pentachloride is used as a doped tantalum source, ethyl alcohol / ethylene glycol and deionized water are used as solvents, the precursor is placed into an atomizer, ethyl alcohol / ethylene glycol is added, the source material is atomized in the heat preservation process, and the tantalum-doped tin dioxide single crystal film is obtained on a substrate through carrier gas transmission. The method is simple in operation steps and easy to implement. And the used source materials are easy to obtain, so that the production cost is reduced.

This invention belongs to the field of photovoltaic technology and discloses a post-processing method for ALD-SnO2 thin films, including the following steps: immersing the ALD-SnO2 thin film in water or a DMPS aqueous solution, heating, cleaning, and annealing to obtain a water-treated or DMPS aqueous solution-treated ALD-SnO2 thin film, respectively denoted as W-SnO2 thin film or D-SnO2 thin film. This invention uses immersion water bath or DMPS aqueous solution bath treatment to solve the problems of poor performance of ALD-SnO2 thin films and subsequent perovskite film formation. Specifically, the organic residues on the surface of the W-SnO2 thin film are almost completely removed; however, with prolonged water bath time, the film morphology gradually transforms into an island-like distribution, and the density is impaired. The DMPS aqueous solution bath treatment optimizes the surface groups and energy level structure of the film without destroying the initial morphology and density.

The invention provides an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin compounds in high purity crystalline form that are particularly suitable for use as precursors for depositing high purity tin oxide films in, for example, extreme ultraviolet (EUV) photolithography techniques used in the manufacture of certain microelectronic devices.

Separator (3) for a fuel cell (1, 10), wherein the separator (3) is suitable to be in contact with a power generation section (2) including a membrane electrode assembly (4) of a fuel cell (1) in order to separate the power generation section (2) from a power generation section (2) of an adjacent fuel cell (1), wherein the separator (3) comprises: a metal substrate (31) made of metal; and a tin oxide film (32) covering at least one surface of the metal substrate (31) on one side of the power generation section (2), where: the tin oxide film (32) is made of tin oxide which contains 0.2 to 10 atomic% antimony and the tin oxide film (32) made of tin oxide with a structure formed by SnO 2-X (0.1 ≤ X ≤ 0.4) represents the oxygen deficiency shown.

The invention relates to the technical field of perovskite solar cells, in particular to an application for constructing a passivation layer by using micromolecular urea phosphate and improving the performance of a perovskite solar cell by passivating an interface formed by a perovskite photoactive layer and an electron transport layer. And the passivation layer is formed by mixing and dispersing urea phosphate and an aqueous solution. According to the invention, the passivation layer covers the electron transport layer, so that a low-roughness tin oxide thin film and an ultra-smooth and hole-free perovskite buried interface can be realized. When the urea phosphate is dissolved in an aqueous solution to serve as a surface passivator to be spin-coated on the tin oxide electron transport layer, the defect of tin oxide can be passivated, and meanwhile, the chemical interaction between the urea phosphate and the perovskite is beneficial to optimization of nucleation and growth of crystals, so that the crystallization quality of the perovskite is improved, formation of gaps at a buried interface is inhibited, and the performance of the perovskite solar cell is improved. More effective interface contact is realized, the stability of the device is improved, and the hysteresis of the device is reduced by improving the transmission matching of electrons and holes. And finally, the device performance and the operation stability are effectively improved.

The invention discloses a method for adjusting and controlling the growth uniformity of a tin oxide film, which comprises the following steps of: placing a polished silicon wafer in a carrier boat for bearing the silicon wafer, and arranging a flow uniformizing device below the carrier boat; and after the cavity reaches a vacuum state and the temperature reaches 80-120 DEG C, sequentially introducing a tin source, introducing large-flow argon for primary purging, introducing small-flow argon for secondary purging, introducing an oxygen source, introducing large-flow argon for tertiary purging and introducing small-flow argon for quaternary purging, and repeating for 50-200 times. According to the scheme, through the Bernoulli principle, the pressure intensity of places with small flow velocity in fluid is large, the pressure intensity of places with large flow velocity is small, the movable baffle with the opening degree controlled through the pressure intensity is manufactured at the air exhaust position, airflow is redistributed, and the air uniformity is improved. And through a large and small flow superposition purging mode, it is guaranteed that gas pressure difference is not generated in the source introduction step to affect airflow flowing, the purging capacity is enhanced, and the film thickness uniformity is improved.

The present application provides a preparation method for a fluorine-doped tin oxide film, comprising the following steps: placing a substrate in a deposition apparatus; and performing at least one deposition treatment, wherein each deposition treatment independently comprises performing at least one tin oxide film sub-deposition treatment and at least one fluoride sub-deposition treatment. The present application allows for precise control of the thickness of a fluorine-doped tin oxide film by changing the number of deposition treatments, the number of tin oxide film sub-deposition treatments, and the number of fluoride sub-deposition treatments; and in addition, the film exhibits good uniformity and minimal thickness difference.

There is described a thin-film transistor (TFT) and a method for production thereof. The TFT can include: a substrate; a source disposed at the substrate; a drain disposed at the substrate; a gate; and a thin film of tin oxide disposed within the influence of the gate between the source and the drain, the thin film of tin oxide to form a carrier channel between the source and the drain when sufficient voltage is applied at the gate. Advantageously, the thin film of tin oxide has carrier concentration of less than or equal to 1.0×1019 cm−3 and a mobility of greater than or equal to 100 cm2 / V·s.

Fuel cell separator comprising a metal substrate and a surface layer formed on a surface of the substrate, wherein the surface layer comprises an antimony-containing tin oxide film in an outermost surface of the same, the antimony-containing tin oxide film has a value (%) which represents the orientation of the (200) plane and is calculated according to expression (1): [Mathematical expression 1] Peak intensity (200) − level 21 Peak intensity (110) − level 100 + peak intensity (101) − level 75 + peak intensity (200) − level 21 × 100 where the values ​​of the respective peak intensities are obtained by means of X-ray diffraction, has a value of 35 or greater, the antimony-containing tin oxide film comprises a first layer of a tin oxide film or an antimony-containing tin oxide film, which is formed relatively close to the surface of the substrate, and a second layer of an antimony-containing tin oxide film on the first layer, and wherein, if both the first layer and the second layer comprise an antimony-containing tin oxide film, the first layer is produced at a lower temperature at which the oxidation of the substrate is suppressed, and the second layer is produced at a higher temperature at which the crystallinity is improved.