110 results about "Tin oxide thin films" patented technology

The invention relates to a micro hydrogen sensor, in particular to preparation and performance detection of a palladium-nanometer-scale stannic oxide film type electrode in a hydrogen sensor. In the micro hydrogen sensor, aluminum oxide is used as a substrate, and palladium and nanometer-scale stannic oxide deposit on the substrate as a hydrogen sensitive material by adopting a method of electrode-free electrolysis. The invention provides a preparation method of the palladium-nanometer-scale stannic oxide film type electrode, the palladium-nanometer-scale stannic oxide film type electrode better enhance the performance of the hydrogen sensor as the hydrogen sensitive material, development and application of a nanometer-scale stannic oxide material are beneficial to enhancing the performance of the stannic oxide hydrogen sensor, and stannic oxide is doped into noble metals such as the palladium and the like to enhance the flexibility, reduce the response time and also lower the operation temperature. The invention has the advantages of shorter response time, better stability, better repeatability, micro sensor size, low processing cost and being beneficial to minaturization, integration and industrialization, is particularly suitable for room temperature detection and can also recycle ceramic wafers of a substrate carrier.

The invention belongs to the technical field of non-volatile resistive memory devices, in particular to a polycrystalline tin dioxide resistive thin film and its preparation method and application. The invention uses glass as a substrate, uses a pure metal tin target material, and utilizes a DC magnetron sputtering technology under a certain temperature condition to prepare a polycrystalline tin dioxide semiconductor resistive variable film. Ni top electrode and platinum titanium bottom electrode were prepared by DC magnetron sputtering to test the resistive switching properties of polycrystalline tin dioxide resistive switching films. The ratio of the high and low resistance states of the polycrystalline tin dioxide resistive film is greater than 100, the erasable times of DC scanning are greater than 250 times, and the high and low resistance state maintenance time is greater than 106 seconds. The polycrystalline tin dioxide resistive switch film can be used as a resistive switch material of a resistive switchable memory. The invention also relates to a resistive variable memory using polycrystalline tin dioxide film as a resistive variable material. The invention has good application prospect in the field of non-volatile storage.

The invention discloses a preparation method of a tin oxide film, and belongs to the technical field of film preparation. The preparation method is as follows: a fluoride of antimony is used as a doping source, a chloride of tin is used as a starting raw material, after mixed atomization, the fluoride of antimony and the chloride of tin are deposited on the surface of a high temperature resistant substrate to from a transparent fluorine-antimony co-doping tin oxide thin film with good functions. According to the method, in a SnO2 crystal structure, fluoride ions replace part of oxygen ion positions, antimony ions replace part of tin ion positions for doping, and higher carrier density is obtained, so that the tin oxide film is better in electrical conductivity, atmosphere sensitivity, transmittance and the like than single fluorine or single antimony doping film, and is a very advanced and potential semiconductor functional thin film material.

The invention relates to a preparation method of niobium-doped stannic oxide monocrystal film with a high migration rate. The method comprises the step of using an MOCVD method to grow the niobium-doped stannic oxide monocrystal film on a magnesium fluoride substrate under the condition of vacuum by using tetraethyltin and niobium ethoxide as metal organic sources, using oxygen as an oxidizing gas, and using nitrogen as a carrier gas. The stannic oxide film is an epitaxial material with a monocrystal structure, no twin crystal and domain structure exist in the film, the carrier migration rate of the niobium-doped stannic oxide film is up to 83.8cm<2>V<-1>s<-1>, and average transmittance of a visible light area reaches 83%. The method can be used for preparing transparent semiconductor devices or ultraviolet electronic devices.

The invention discloses an antimony selenide thin film solar cell and a preparation method thereof. The cell comprises a conductive substrate, an n-type layer, a p-type layer and an electrode, whereinthe n-type layer is a tin oxide thin film, and the p-type layer is an antimony selenide thin film. Compared with a traditional n-type layer cadmium sulfide, tin oxide used in the antimony selenide thin film is green and non-toxic and can be used for a novel green and non-toxic antimony selenide thin film solar cell; and moreover, the tin oxide is large in energy gap and stable in chemical property, the light absorption of the cell on a short wave band can be improved, a light current of the cell is increased, and higher device stability is obtained. By the method, the high-efficiency, green and non-toxic antimony selenide thin film solar cell is expected to be obtained.

The invention discloses a preparation method of a nitrogen-doped tin dioxide film. The tin dioxide film is prepared by a magnetron sputtering method; and in magnetron sputtering, the mixed gas of O2 and N2 is led in according to a proportion of O2:N2=(1-6):(99-94), and the air pressure in a magnetron sputtering room is controlled to be lower than or equal to 5Pa. In the invention, a nitrogen-doped SnO2 film is prepared by a reaction magnetron sputtering method; the preparation technology is simple and easy to control and is a basic technology for industrially producing a film at present; the nitrogen element is widely available, the cost is low, and the reaction product is nontoxic and pollution-free to the environment; and the resistivity of a transparent conductive film obtained by controlling the technological parameters is lower than 2.4x10<-3>(ohm).cm, and the visible light transmittance is greater than 80%, thus the requirements for the performance of a commercial transparent conductive film are met.

The invention discloses a tin oxide room-temperature gas-sensitive element and its preparation method. The method comprises the following steps: 1, depositing a metal tin film having a thickness of 400-1200nm on a clean alumina substrate, and polishing the surface of the metal tin film; 2, placing an anode which is the alumina substrate deposited with the metal tin film and a cathode which is a titanium sheet in an electrolyte solution, oxidizing by applying a 5-12V direct-current voltage on two ends of the cathode and the anode to form an oxide film of tin, cleaning the surface of the oxide film of tin with deionized water, and naturally drying; 3, carrying out thermal treatment of the oxide film of tin to obtain a tin oxide film; and 4, coating a silver slurry on the tin oxide film, and sintering to obtain the gas-sensitive element. The preparation method adopts anode oxidation before the film sintering to form a porous structure is benefit for the gas diffusion and the gas adsorption, so the contact surface of a material with a gas is increased, and the sensitivity and the response time of the gas-sensitive element are improved.

The invention discloses a spraying method for a large-area double-sided and fluorine-doped tin oxide transparent conductive film. In the spraying method, a large amount of fog drops containing a fluorine-doped tin oxide precursor spraying liquid are sprayed into a coating chamber by adopting a spraying pyrolysis preparation technology; the fog drops are driven by an exhaust fan to regularly and directionally move; under the action of high temperature, the fog drops are subjected to solvent volatilization, a thermal decompose reaction of solute and the like and then uniformly form nucleuses and grow on the front side and the back side of a vertically-arranged glass matrix to form the fluorine-doped tin oxide film; residual waste gas is exhausted from an exhaust system; and finally, the prepared double-sided and fluorine-doped tin oxide film is cooled under strong wind to finish the preparation process of the film. The double-sided and fluorine-doped tin oxide film prepared by the method has the advantages of low cost, small pollution to a film surface, high transmissivity of visible light and infrared reflectivity and favorable conduction performance; meanwhile, since the spraying pyrolysis preparation technology is adopted, the process is simple and feasible, the preparation efficiency of the film is high and the film can be prepared in double sides and a large area.

The invention discloses a preparation method of a nano-grade porous tin dioxide film gas sensitive material. According to the invention, nano-grade porous gold is adopted as a growth template, and tin dioxide is deposited with an atomic layer deposition technology; and through annealing crystallization and growth template aqua regia corrosion processes, the double-linked tin dioxide gas sensitive film with nano-grade porous gold is finally obtained. The nano-grade porous tin dioxide film gas sensitive material prepared by the preparation method provided by the invention can be used for detecting nitrogen dioxide, and has an optimal working temperature of 300 DEG C. The material has ultra-low nitrogen dioxide gas sensitive detection limit and ultrahigh gas sensitive responsivity.

The invention provides a water-resistant perovskite photovoltaic material used for a solar cell and used as a light-absorbing layer of the solar cell. The surface of the perovskite material is coated with a nanometer stannic oxide thin film, so that the perovskite material can be effectively prevented from being degraded by moisture in the air to result in battery failure, and the water repellency and the stability of the perovskite material are improved; meanwhile, the light-absorbing property of the perovskite material can be reinforced by the nanometer stannic oxide thin film, and the photoelectric conversion efficiency can be improved; and when the water-resistant perovskite photovoltaic material provided by the invention is used for assembling a solar cell, the photoelectric conversion efficiency of the solar cell can reach 12.8%.

A process for treating the organic substance difficult to degradate in water by photoelectric electrode features that the Sb doped SnO2 film electrode used as the photoelectric electrode and the air oxygen electrode as cathode are parallelly used and vertically arranged in photoelectrically catalytic reactor and the 365-nm ultraviolet light source is arranged in the center of said reactor or at its outside. Its advantage is the combination of oxidizing action of anode with reducing action of cathode to remove said organic substance from water thoroughly.

Microbolometer is a class of infrared detector whose resistance changes when the temperature changes. In this work, we deposited and characterized Germanium Oxide thin films mixed with Sn (Ge—Sn—O) for uncooled infrared detection. Ge—Sn—O were deposited by co-sputtering of Sn and Ge targets in the Ar+O environment using a radio frequency sputtering system. Optical characterization shows that the absorption in Ge—Sn—O was most sensitive in the wavelength ranges between 1.0-3.0 μm. The transmission data was further used to determine the optical energy band gap (0.678 eV) of the thin-film using Tauc's equation. We also found the variations of absorption coefficient (1.4802×10⁵ m-¹-1.0097×10⁷ m⁻¹), refractive index (1.242-1.350), and the extinction coefficient (0.3255-8.010) for the wavelength ranges between 1.0-3.0 μm. The thin film's resistivity measured by the four point probe was found to be 4.55 Ω-cm and TCR was in the range of −2.56-−2.25 (%/K) in the temperature range 292-312K. In light of these results it can be shown that this thin film is in keeping with the current standards while also being more cost and time effective.

The present invention relates to a preparation method of a perovskite solar cell module. The method comprises the steps of: allowing FTO to scribe a shielding wire P1 with a distance of 1cm by laser;shielding the FTO by a stainless steel wire with a diameter of 100[Mu]m at a position having a 100[Mu]m distance from the P1, employing a thermal spraying method to prepare titanium oxide or tin oxide, removing the stainless steel wire, and forming a shielding wire P2-1; employing a co-evaporation method to prepare a lead iodide/cesium iodide thin film, putting the lead iodide/cesium iodide thin film into a vacuum chamber, heating FAI powder, and performing reaction of FAI steam and the lead iodide/cesium iodide thin film to form a CsxFA1-xPbI3 perovskite thin film; spraying hole transport layer materials, and employing laser to scribe a shielding wire P2-2 along the shielding wire P2-1; and performing thermal evaporation of gold to employ laser to scribe a shielding wire P3 at a positionhaving a 100[Mu]m distance from the P2-2, and performing package to obtain a perovskite solar cell module. The preparation method employs the stainless steel wire to shield the FTO, employs thermal spraying to prepare a titanium oxide/tin oxide thin film and employs the shielding wire P2-1 formed by removal of the stainless steel wire to solve the effective series problem between the perovskite solar cells and improve the implementation efficiency.

The invention discloses a film layer, a manufacturing method thereof and a photovoltaic device with the film layer, which belong to the technical field of solar cells. By using magnetron sputtering technology, a laminated structure of a titanium oxide film, a silicon oxide film and a tin oxide film which are orderly deposited on the surface of a substrate is used as a front electrode of a transparent conductive oxide, so that the front electrode of the laminated transparent conductive oxide can be manufactured in multi-chamber sputtering equipment on line to improve the production efficiency and reduce the manufacturing cost.

The invention discloses a preparation method of a novel composite flat plate electric heating film. The method comprises the steps of dissolving butyltin trichloride (MBTC), SbCl3 and NH4F which are used as a precursor in a solvent prepared from ethyl alcohol and water according to a proportion so as to use as a first precursor liquid; dispersing silver nanoparticle in deionized water to use as asecond precursor liquid; preparing acrylic resin to form a template agent, dropwise adding the template agent onto a quartz substrate, and drying to form a chapped template network; dropwise adding and spin-coating the second precursor liquid onto a substrate for forming a template, and performing annealing after drying; depositing the first precursor liquid onto the substrate and performing thermal processing by a method of ultrasonic spray pyrolysis; and fabricating an electrode to from an electric heating film device. The method has the advantages that the novel composite flat plate electric heating film has relatively high oxidization-resistant performance by a tin oxide thin film at the outermost layer, and stable film layer resistance during the application process can be maintained;the silver nanoparticle has excellent electric and heat conversion efficiency, a relatively high temperature can be achieved under a low voltage; and meanwhile, the novel composite flat plate electric heating film has excellent light transmittance with the adoption of the quartz substrate, and the light transmittance reaches 80% or above.

A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the purity of the tin target, and the step of applying reactive gases containing F atoms (CF₄) and oxygen (O₂) for enabling tetrafluoromethane (CF₄) to be dissociated by the generated plasma into fluorine ions and excited fluorine atoms for deposition with tin ions from the tin target on a substrate to form a thin film of fluorine-doped tin oxide on the substrate.

The invention discloses a bipolar resistive access memory and a preparation method thereof. The bipolar resistive access memory comprises an insulating substrate, an upper electrode film, a lower electrode film, wherein a resistive layer material is arranged between the upper electrode film and the lower electrode film. The bipolar resistive access memory is characterized in that the upper electrode film is a film made of one of platinum, copper or gold, the lower electrode film is a fluorine-doped tin oxide film, and the resistive layer material is an alpha-Fe2O3 polycrystalline film; and the structure of the memory is made of Pt or Cu or Au/alpha-Fe2O3/FTO. The bipolar resistive access memory has the advantages of small size, simple structure, no volatilization, quick read-write availability, low working voltage, low energy-consumption, no moving part, no destructive read out and the like.

The invention particularly provides a p-n heterotypic heterojunction material formed by a nanometer tin dioxide thin film and a silicon substrate, and a high performance ultraviolet detector using palladium as a catalyst layer. The tin dioxide thin film grows on the silicon substrate through a sputtering method. Mask and sputtering methods are used to prepare the palladium catalyst layer whose area is smaller than the area of the tin oxide film on the surface of the thin film. According to the invention, the palladium/tin dioxide/silicon heterojunction hydrogen ultraviolet detector which is prepared through the catalytic effect of the palladium film and the amplification effect of tin dioxide/silicon heterojunction has the advantages of simple process, low cost, low energy consumption, high sensitivity and fast response and recovery, does not need a heater, can work under room temperature, can well detect ultraviolet, and has an important application prospect.

The invention discloses an optical fiber methane sensor based on graphene sensitivity enhancing and a preparation method thereof. The optical fiber methane sensor based on graphene sensitivity enhancing comprises a side polishing optical fiber, wherein the surface of the side polishing optical fiber exposing a fiber core is coated with a graphene doped tin oxide film. The preparation method comprises the following steps: adding graphene into a tin salt alcohol solution, mixing, and aging to obtain a graphene doped tin oxide film solution; and coating the tin oxide film solution on the surface of the side polishing optical fiber exposing the fiber core. The sensor provided by the invention has favorable methane sensing property and high sensitivity.

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.