Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tin oxide room-temperature gas-sensitive element and its preparation method

A technology of gas sensor and tin oxide, which is applied in anodic oxidation, instruments, analytical materials, etc., can solve the problems of complex process, unsuitable low-concentration toxic gas detection, and low sensitivity, so as to increase the contact area, improve sensitivity and response Time and structure are simple and practical

Inactive Publication Date: 2012-11-21
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies and defects of the prior art, the purpose of the present invention is to provide a method for preparing a tin oxide room temperature gas sensor, which aims to solve the problems of the existing gas sensor with complex process, low sensitivity and inappropriate for low-concentration toxic gases. detection problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tin oxide room-temperature gas-sensitive element and its preparation method
  • Tin oxide room-temperature gas-sensitive element and its preparation method
  • Tin oxide room-temperature gas-sensitive element and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] The preparation method of tin oxide room temperature gas sensor comprises the steps:

[0027] S1: Deposit a layer of metal tin film with a thickness of 400-1200 nanometers on a clean alumina substrate, and polish the surface of the metal tin film; among them, the method of magnetron sputtering can be used on a clean alumina substrate Metal tin film deposited on; SiO can be used 2 The polishing liquid polishes the surface of the film. If the film deposited by magnetron sputtering is too thin, the film will be discontinuous; if it is too thick, the film will not be fully oxidized; if the oxidation voltage is too low, the film will not be oxidized or oxidized too slowly; if it is too high, the film structure will be damaged due to excessive oxidation.

[0028] S2: The aluminum oxide substrate deposited with a metal tin film is used as the anode, and the titanium sheet is used as the cathode. The anode and the cathode are placed in the electrolyte solution, and a 5-12 volt...

Embodiment 1

[0034] (1) Deposit a film with a thickness of 400nm on a clean alumina substrate by magnetron sputtering, and use SiO 2 The polishing liquid polishes the surface of the film.

[0035] (2) The sputtered film is used as the anode, the titanium sheet is used as the cathode, the distance between the electrodes is 1.5cm, a DC voltage of 5 volts is applied, the solution is 0.1mol / L potassium hydroxide solution, and tin oxide porous can be formed after oxidation for 2 minutes Film (most of which is stannous oxide), the surface of the film was cleaned with deionized water and dried naturally.

[0036] (3) During sintering, first raise the heating rate to 180°C at a heating rate of 50°C / h and keep it warm for 1 hour to oxidize the unoxidized tin to prevent the metal tin from dissolving and destroying the film structure, and then raise the heating rate to 650°C at a heating rate of 150°C / h Keep warm for 3 hours to completely oxidize the product to tin dioxide.

[0037] (4) Use the met...

Embodiment 2

[0040](1) Deposit a metal tin film with a thickness of 1000nm on a clean alumina substrate by magnetron sputtering, and use SiO 2 The polishing liquid polishes the surface of the film.

[0041] (2) Use the above-mentioned polished film as the anode, use the titanium sheet as the cathode, the distance between the electrodes is 2 cm, the solution is 0.3 mol / L oxalic acid solution, apply a DC voltage of 8 volts, and form a tin oxide porous film after oxidation for 1 min. Wash with deionized water and dry naturally.

[0042] (3) During sintering, first heat the above obtained film at 180°C for 1 hour to oxidize the non-oxidized tin to prevent the dissolution of metal tin from destroying the film structure, and then raise it to 500°C for 3 hours to completely oxidize the product into tin dioxide .

[0043] (4) Use the screen printing method to coat the silver paste on the tin oxide film, and get the gas sensor after firing.

[0044] The gas sensor prepared by the method provided...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a tin oxide room-temperature gas-sensitive element and its preparation method. The method comprises the following steps: 1, depositing a metal tin film having a thickness of 400-1200nm on a clean alumina substrate, and polishing the surface of the metal tin film; 2, placing an anode which is the alumina substrate deposited with the metal tin film and a cathode which is a titanium sheet in an electrolyte solution, oxidizing by applying a 5-12V direct-current voltage on two ends of the cathode and the anode to form an oxide film of tin, cleaning the surface of the oxide film of tin with deionized water, and naturally drying; 3, carrying out thermal treatment of the oxide film of tin to obtain a tin oxide film; and 4, coating a silver slurry on the tin oxide film, and sintering to obtain the gas-sensitive element. The preparation method adopts anode oxidation before the film sintering to form a porous structure is benefit for the gas diffusion and the gas adsorption, so the contact surface of a material with a gas is increased, and the sensitivity and the response time of the gas-sensitive element are improved.

Description

technical field [0001] The invention belongs to the technical field of gas sensitive materials and components, and more specifically relates to a tin oxide room temperature gas sensitive component and a preparation method thereof. Background technique [0002] Gas sensors are widely used in environmental protection, industrial production, health and safety, and medical diagnosis and other fields. Compared with other oxide gas-sensing materials, tin oxide has a lower working temperature and higher stability, and can realize reliable detection of various flammable, explosive and toxic gases at a lower cost. Taking the detection of hydrogen sulfide gas as an example, the previous tin oxide gas sensor needs to work in the range of 150~300°C, and its higher working temperature wastes energy on the one hand, reduces portability, and increases safety hazards , It is not conducive to use in special environments such as underground. For this reason, a gas sensor with high sensitivi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00C25D11/34
Inventor 周东祥刘欢龚树萍傅邱云胡云香郑志平赵俊万久晓
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com