Preparation method of nitrogen-doped tin dioxide film

A tin dioxide and nitrogen doping technology, applied in cable/conductor manufacturing, conductive layer on insulating carrier, ion implantation plating, etc. The effect of extensive, simple and easy-to-control preparation process
CN102644055AInactive Publication Date: 2012-08-22SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2012-08-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a preparation method of a nitrogen-doped tin dioxide film. The tin dioxide film is prepared by a magnetron sputtering method; and in magnetron sputtering, the mixed gas of O2 and N2 is led in according to a proportion of O2:N2=(1-6):(99-94), and the air pressure in a magnetron sputtering room is controlled to be lower than or equal to 5Pa. In the invention, a nitrogen-doped SnO2 film is prepared by a reaction magnetron sputtering method; the preparation technology is simple and easy to control and is a basic technology for industrially producing a film at present; the nitrogen element is widely available, the cost is low, and the reaction product is nontoxic and pollution-free to the environment; and the resistivity of a transparent conductive film obtained by controlling the technological parameters is lower than 2.4x10<-3>(ohm).cm, and the visible light transmittance is greater than 80%, thus the requirements for the performance of a commercial transparent conductive film are met.
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Description

technical field

[0001] The invention relates to the preparation of a transparent conductive film, in particular to a preparation method of a nitrogen (N) doped tin dioxide film. Background technique

[0002] Transparent Conducting Oxide (TCO) film, a material with both transparency and conductivity, is widely used in various portable electronic products (such as notebook computers, mobile phones, etc.), solar cells and other industries. For transparent conductive films with application value, it is generally believed that the resistivity should reach 10 -3 On the order of Ω·cm, the visible light transmittance should be greater than 80%.

[0003] After years of research, ZnO, In 2 o 3 and SnO 2 The representative TCO film has been practically applied. Tin-doped In 2 o 3 Thin film (ITO) resistivity between 10 -3 ~10 -4 Ω·cm, with a visible light transmittance of more than 85%, is currently the most successful TCO film; aluminum-doped ZnO film (AZO) is a representative...

Claims

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