Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof
A humidity sensor and resistive technology, applied in the field of sensors, can solve the problems of limited performance and effect, limited use environment, short service life, etc., and achieve the effects of short recovery time, simple process and low energy consumption
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[0026] We selected a monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Silicon wafers were cleaned in ultrasonic waves for 30 minutes with deionized water, ethanol, and acetone in sequence.
[0027] Tin dioxide film was prepared by DC magnetron sputtering method: put the cleaned silicon substrate into the sputtering chamber, and turn on the vacuum system for vacuuming; when the background vacuum was 2×10 -4 At Pascal, argon / oxygen mixed gas is introduced, the ratio of the two gases is 1:1, and the pressure is maintained at 5 Pascals. After the pressure is stable, the sputtering tin target is started, the sputtering power is 90 watts, and the sputtering time for 5 minutes, and the sputtering temperature was room temperature. A tin dioxide film with a thickness of about 70 nm is formed on the silicon wafer. After sputtering, keep the ventilated state for 30 minutes, then stop the argon and oxygen, and the vacuum sy...
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