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Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof

A humidity sensor and resistive technology, applied in the field of sensors, can solve the problems of limited performance and effect, limited use environment, short service life, etc., and achieve the effects of short recovery time, simple process and low energy consumption

Pending Publication Date: 2016-01-06
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current humidity sensors have shortcomings such as short service life, limited use environment, hysteresis, and pollution, which greatly limit their performance and effect.

Method used

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  • Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof
  • Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof
  • Resistance-type humidity sensor based on Pd/SnO2/Si heterojunction and preparation method thereof

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Embodiment 1

[0026] We selected a monocrystalline silicon wafer with a thickness of 0.5 mm as the substrate, and retained its natural oxide layer. Silicon wafers were cleaned in ultrasonic waves for 30 minutes with deionized water, ethanol, and acetone in sequence.

[0027] Tin dioxide film was prepared by DC magnetron sputtering method: put the cleaned silicon substrate into the sputtering chamber, and turn on the vacuum system for vacuuming; when the background vacuum was 2×10 -4 At Pascal, argon / oxygen mixed gas is introduced, the ratio of the two gases is 1:1, and the pressure is maintained at 5 Pascals. After the pressure is stable, the sputtering tin target is started, the sputtering power is 90 watts, and the sputtering time for 5 minutes, and the sputtering temperature was room temperature. A tin dioxide film with a thickness of about 70 nm is formed on the silicon wafer. After sputtering, keep the ventilated state for 30 minutes, then stop the argon and oxygen, and the vacuum sy...

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Abstract

The invention particularly provides a high-performance humidity sensor which comprises n-n homotype heterojunction materials formed by a stannic oxide thin film and a silicon substrate covered with a silicon-dioxide layer and takes palladium as a catalytic layer. A preparation method of the resistance-type humidity sensor comprises the steps that the stannic oxide thin film is grown on the silicon substrate covered with silicon dioxide through a sputtering method firstly; then the palladium catalytic layer with the area smaller than the stannic oxide film is prepared on the surface of the thin film through a mask film and the sputtering method. According to the resistance-type humidity sensor based on the Pd / SnO2 / Si heterojunction and the preparation method thereof, the Pd / SnO2 / Si heterojunction humidity sensor is prepared by means of the catalytic effect of the palladium film and the amplification effect of the stannic oxide-silicon heterojunction, the technology is simple, the cost is low, a heater is not needed, the humidity sensor can work at the room temperature, the humidity sensor has the advantages of being low in energy consumption, high in sensitivity and short in response and recovery time, the good detection property to water vapor is achieved, and important application prospect is achieved.

Description

technical field [0001] The invention belongs to the field of sensors, in particular to a resistive humidity sensor based on palladium / tin dioxide / silicon heterojunction. Background technique [0002] With the rapid development and popularization of science and technology, there are more and more high-performance equipment, and the requirements for humidity in all walks of life are also getting higher and higher. The traditional humidity monitoring mode is based on people, relying on manual shifts, manual inspections, etc. to measure and record environmental status information. In this mode, not only low efficiency is not conducive to the full utilization of human resources, but also lacks a scientific and complete management system. Humidity sensors have been widely used in industrial production, production process control, environmental monitoring, storage and so on. However, the current humidity sensors have shortcomings such as short service life, limited use environmen...

Claims

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Application Information

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IPC IPC(8): G01N27/04
Inventor 凌翠翠韩治德郭天超韩雪
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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