Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Compound NH4GaS2 and preparation method and application thereof

A compound and reaction technology, applied in the field of sulfide preparation, can solve the problems of high energy consumption and complex operation of the preparation method, and achieve the effects of low energy consumption, simple and easy method, and good stability

Active Publication Date: 2019-07-26
YANGTZE NORMAL UNIVERSITY
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention also provides compound NH 4 GaS 2 The preparation method solves the problems of complex operation and high energy consumption in the existing gallium-containing sulfide preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Compound NH4GaS2 and preparation method and application thereof
  • Compound NH4GaS2 and preparation method and application thereof
  • Compound NH4GaS2 and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1) Weigh 1mmol of indium oxide and 20mmol of thiourea and mix them evenly, then add them into 20mL PTFE lining, then weigh 1.5g of oxalic acid and pour them into the PTFE lining, then seal the PTFE Lining, put the lining into the stainless steel jacket.

[0032] 2) Put the polytetrafluoroethylene lining and stainless steel jacket in step 1) into an oven, and react at 230 ° C for 72 hours. After the reaction is complete, wash the product with distilled water to remove unreacted soluble impurities and obtain white granular crystals, namely Compound NH 4 GaS 2 .

Embodiment 2

[0034] 1) Weigh 1mmol of indium oxide and 15mmol of thiourea and mix them evenly, then add them into 20mL PTFE lining, then weigh 2.0g of oxalic acid and pour them into the PTFE lining, then seal the PTFE Lining, put the lining into the stainless steel jacket.

[0035] 2) Put the polytetrafluoroethylene lining and stainless steel jacket in step 1) into an oven, and react at 240°C for 120h. After the reaction is complete, wash the product with distilled water to remove unreacted soluble impurities and obtain white granular crystals, namely Compound NH 4 GaS 2 .

Embodiment 3

[0037] 1) Weigh 1mmol of indium oxide and 30mmol of thiourea and mix them evenly, then add them into 20mL PTFE lining, then weigh 1.0g of oxalic acid and pour them into the PTFE lining, then seal the PTFE Lining, put the lining into the stainless steel jacket.

[0038]2) Put the polytetrafluoroethylene lining and stainless steel jacket in step 1) into an oven, and react at 230°C for 168h. After the reaction is complete, wash the product with distilled water to remove unreacted soluble impurities and obtain white granular crystals, namely Compound NH 4 GaS 2 .

[0039] 2. Compound NH 4 GaS 2 testing and verification

[0040] 1. The NH prepared in the above examples 4 GaS 2 The samples were observed under an optical microscope, and the results were as follows figure 1 shown.

[0041] It can be seen from the figure that when the sample is magnified 80 times, white granular crystals appear, and the large granular samples are stacked by smaller flake samples.

[0042] 2. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a compound NH4GaS2 and a preparation method and application thereof. The preparation method includes: mixing gallium oxide and thiourea evenly and adding the gallium oxide and thiourea to a reactor; adding oxalic acid and sealing the reactor; heating the reactor for reaction to obtain white granular crystal, namely the compound NH4GaS2, after reaction. The compound NH4GaS2 is synthesized by adopting the simple thiourea oxalate method which is simple and easy to implement, the method does not need to be carried out under harsh vacuum reaction conditions, raw materials arecheap and easy to obtain, and low cost, low energy consumption and easy industrial production are achieved; the compound has good photocatalytic activity for hydrogen production under simulated sunlight and can be used as raw material for the synthesis of other gallium sulfides, and good application prospect is achieved.

Description

technical field [0001] The invention relates to the technical field of sulfide preparation, in particular to a compound NH 4 GaS 2 And its preparation method and application. Background technique [0002] Gallium is a scattered metal with low melting point and high boiling point, and has the reputation of "the backbone of the electronics industry". Gallium compounds are high-quality semiconductor materials and are widely used in the optoelectronic industry and microwave communication industry. For example, commonly used semiconductors include gallium nitride, gallium arsenide, and gallium phosphide. Gallium compounds are also used in the manufacture of solar cells, such as gallium arsenide III-V solar cells, which have good heat resistance, radiation resistance and other characteristics, and their photoelectric conversion rate is very high. Initially, because of the high cost of production and use, it was often used in aerospace and military fields. In recent years, the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G15/00B01J27/24C01B3/04
CPCC01G15/006B01J27/24C01B3/042B01J35/39Y02E60/36
Inventor 杨甲孙晓瑞孙祥宇
Owner YANGTZE NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com