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Composite material as well as preparation method and application thereof

A technology of composite materials and transfer method, which is applied in the field of composite materials and its preparation, can solve the problem of the need to improve the life of carriers, and achieve the effects of low cost, prolonging the life of carriers, and simple process

Active Publication Date: 2022-04-12
BEIJING INST OF RADIO METROLOGY & MEASUREMENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although single-layer tungsten disulfide is a good photoelectric material, its carrier lifetime still needs to be improved

Method used

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  • Composite material as well as preparation method and application thereof
  • Composite material as well as preparation method and application thereof
  • Composite material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A kind of composite material, its preparation method comprises the steps:

[0032] First, thallium gallium sulfide (TlGaS 2 ) and monolayer tungsten disulfide (WS 2 ), and then firstly transfer GaS-Tl nanosheets to Si / SiO by micromanipulating the transfer platform 2 (300nm) on the substrate, then transfer a single layer of tungsten disulfide in the same way and make it overlap with gallium thallium sulfide on the substrate at least partially to form a heterogeneous structure to obtain a composite material (the structure of the composite material is as follows figure 1 shown).

Embodiment 2

[0034] An optoelectronic device comprising the composite material prepared in Example 1, said optoelectronic device comprising: light-emitting diodes, laser diodes, photodetectors, avalanche photodiodes, cascode switches, transistors, rectifiers and thyristors, high electron mobility Power Transistor, Metal Semiconductor Field Effect Transistor, Metal Oxide Field Effect Transistor, Power Metal Oxide Semiconductor Field Effect Transistor, Power Metal Insulator Semiconductor Field Effect Transistor, Bipolar Junction Transistor, Metal Insulator Field Effect Transistor, Heterojunction Bipolar Transistor , a power insulated gate bipolar transistor, a power vertical junction field effect transistor, an infrared photodetector or a combination thereof, wherein the composite material constitutes a heterojunction in the optoelectronic device.

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Abstract

The invention provides a composite material as well as a preparation method and application thereof. The composite material comprises: a substrate; the gallium thallium sulfide layer is arranged on the substrate; the single-layer tungsten disulfide layer is arranged on the gallium thallium sulfide layer and at least partially covers the gallium thallium sulfide layer, and the single-layer tungsten disulfide layer and the gallium thallium sulfide layer form a heterojunction. According to the invention, gallium thallium sulfide and single-layer tungsten disulfide are combined to form a heterojunction for regulating and controlling the service life of the carrier of the single-layer tungsten disulfide for the first time, and the composite material provided by the invention can obviously prolong the service life of the carrier of the single-layer tungsten disulfide.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials. More specifically, it relates to a composite material and its preparation method and application. Background technique [0002] Tungsten disulfide (WS 2 )'s natural mineral is tungstenite, which is relatively rare in nature and is mainly prepared by chemical methods; because of its radiation resistance and good thermal and chemical stability, it is regarded as an excellent semiconductor material. The layered structure of tungsten disulfide also has the characteristics of wide band gap in the visible light range and the band gap can change with the thickness, high carrier mobility, etc. Among them, the single layer tungsten disulfide has the characteristics of traditional layered In addition to the characteristics of tungsten sulfide, it also has a larger absorption coefficient, exciton binding energy up to hundreds of millielectron volts and other excellent characteristics, mak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCY02P70/50
Inventor 付洋张升康杨宏雷
Owner BEIJING INST OF RADIO METROLOGY & MEASUREMENT
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