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A light-emitting diode epitaxial structure based on aluminum gallium nitride material and its manufacturing method

A light-emitting diode, aluminum gallium nitride technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low efficiency, and achieve the effect of improving optical power output value, improving external quantum efficiency, and reducing optical waveguide transmission effects.

Active Publication Date: 2022-08-02
XUZHOU LIYU ADVANCED TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite years of intense research, UV LEDs, especially those emitting less than 300 nm, remain inefficient compared to blue or green devices

Method used

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  • A light-emitting diode epitaxial structure based on aluminum gallium nitride material and its manufacturing method
  • A light-emitting diode epitaxial structure based on aluminum gallium nitride material and its manufacturing method
  • A light-emitting diode epitaxial structure based on aluminum gallium nitride material and its manufacturing method

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Embodiment Construction

[0027] In order to facilitate the understanding of those skilled in the art, the present invention will be further described below with reference to the embodiments and the accompanying drawings, and the contents mentioned in the embodiments are not intended to limit the present invention. The present invention will be described in detail below with reference to the accompanying drawings.

[0028] The present invention will be further described in detail below with reference to the accompanying drawings.

[0029] A layer of aluminum gallium nitride can be grown on a substrate, a buffer layer, another III-V material layer, or another material and form part of a semiconductor structure used in optoelectronic or electronic components or devices, such as emitters , lasers, diodes, photocells, solar cells, transistors, memory devices, microprocessors, another aspect of the invention is a semiconductor structure made by the method. The semiconductor structure includes a layer conta...

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Abstract

The invention relates to an epitaxial structure of a light emitting diode based on aluminum gallium nitride material and a manufacturing method thereof. The invention optimizes the light extraction structure for an ultraviolet light emitting diode based on tunneling effect. The UV light emitting diode using the n-p-n-type tunneling structure can effectively avoid the absorption of UV light by the traditional p-type gallium nitride in the pn structure of the UV diode, that is, the use of n-type aluminum gallium nitride (its aluminum Composition high enough that its band bandwidth is substantially transparent to UV light from the active layer) and a very thin layer of n-type or undoped gallium nitride (5 nm and below), and a layer of p-type nitrogen A carrier injection structure based on the tunneling effect of aluminum gallium sulfide (the aluminum composition of which is high enough that its energy band bandwidth is substantially transparent to ultraviolet light from the active layer). The ultraviolet light emitting diode with this structure needs to be combined with a new light extraction structure and technology to effectively extract the ultraviolet light absorbed in the traditional ultraviolet light emitting diode from the p surface.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial structure based on aluminum gallium nitride material and a manufacturing method thereof. Background technique [0002] Visible spectrum LEDs based on indium gallium nitride and aluminum indium gallium phosphorous material systems have matured and are currently in volume production. However, the development of UV LEDs is still hindered by many difficulties, including the fundamental material properties of aluminum gallium nitride alloys, especially alloys with high aluminum content. For example, deep UV LEDs emitting less than 300 nanometers have only up to 1% EQE compared to LEDs in the visible spectral range with external quantum efficiencies greater than 50% (EQE, the ratio of extracted photons to injected electron-hole pairs) . UV light-emitting diodes with emission wavelengths in the range of 230-350 nanometers are expected to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/0075
Inventor 廖翊韬
Owner XUZHOU LIYU ADVANCED TECH CO LTD
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