6 results about "Blue light emitting diode" patented technology

This invention relates to the field of semiconductor technology, specifically to a low-stress blue light-emitting diode epitaxial wafer and its fabrication method. The low-stress blue LED epitaxial wafer includes a substrate on which a stress buffer layer, a three-dimensional nucleation layer, a single-crystal two-dimensional GaN layer, an n-type layer, an active layer, an electron blocking layer, and a P-type ohmic contact layer are sequentially deposited. The n-type layer sequentially includes a first n-type layer, a second n-type layer, and a third n-type layer. The first n-type layer is a high-Si, low-In-content n-type InGaN layer; the second n-type layer is an n-type InGaN layer with gradually decreasing Si and In concentrations; and the third n-type layer is a low-Si-doped n-type GaN layer. The low-In-ratio n-InGaN layer and n-GaN transition layer design used in this invention effectively improves crystal quality, reduces defects, and significantly improves chip reliability and luminous efficiency.

Light-emitting diode module, LED module, which is configured to emit white light, wherein the LED module has: a blue light-emitting diode (30) configured to emit blue light with a first peak wavelength in a range of 420 nm to 465 nm; at least one wavelength conversion material (54, 56) configured to convert part of the blue light into converted light of another wavelength; and a near-infrared wavelength conversion material (58) configured to be excited by the blue light of the blue light-emitting diode (30) to emit an additional light with a second peak wavelength in a range of 740 nm to 900 nm and a full width at half maximum (FWHM) of 120 nm or less, wherein the near-infrared wavelength conversion material (58) Ca(Al 12-x-y ,Ga y )O 19 :xCr 3+ (0≤x≤1, 0≤y≤6) exhibits, where the converted light, another part of the blue light, and the additional light combine to form the white light, and wherein a spectrum of the white light thus formed has a peak intensity in the range of 740 nm to 900 nm, and the peak intensity is greater than or equal to 4.5% of a peak intensity in a blue band from 420 nm to 465 nm.

This display module comprises: a substrate on which a plurality of thin film transistors are formed; and a plurality of pixels disposed on the plurality of thin film transistors. Each of the plurality of pixels includes a red LED, a green LED, and a blue LED. Among the plurality of pixels, at least one pixel in which the red LED or the green LED does not emit light includes a light conversion layer provided on the blue LED.

The present disclosure provides a backlight module and a manufacturing method thereof. The backlight module comprises a circuit board and a plurality of light emitting units. The plurality of light emitting units are arranged on the circuit board in a spaced manner and are electrically connected to the circuit board. Each light emitting unit comprises a plurality of light emitting diode chips arranged in a spaced manner and a fluorescent layer covering the plurality of light emitting diode chips. The plurality of light emitting diode chips comprises at least one blue light emitting diode chip and at least one green light emitting diode chip. The number of the blue light emitting diode chips is greater than or equal to the number of the green light emitting diode chips. The fluorescent layer is a red fluorescent layer.

The application provides a display module, a display system and a scanning method, which can be applied to the technical field of display and can realize the following technical effects: the display module comprises a display module, a row driving module and a column driving module, the display module comprises a plurality of pixel units, each pixel unit comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode, the row driving module and the column driving module are connected to the positive electrode and the negative electrode of each pixel unit respectively, the number of red column drivers is greater than the number of blue column drivers in the column driving module, and the number of red column drivers is greater than the number of green column drivers, so that the number of pixel units connected by the blue column drivers and the green column drivers is greater than the number of pixel units connected by the red column drivers, the control range of the blue column drivers and the green column drivers is expanded, and the utilization rate of the blue column drivers and the green column drivers is promoted.

The application discloses a packaged light source, a lamp with the packaged light source and a packaging method, wherein the packaged light source comprises: a packaged blue light emitting diode chip, a packaged photoluminescence fluorescent powder and silica gel mixture layer and a pre-modification glue layer which are sequentially superimposed; the packaged blue light emitting diode chip and the packaged photoluminescence fluorescent powder and silica gel mixture layer have a color temperature difference between a color temperature of light generated by the packaged blue light emitting diode chip and the packaged photoluminescence fluorescent powder and silica gel mixture layer and a target color temperature; and the pre-modification glue layer is used for modifying to the target color temperature. When the packaged light source is produced by a packaged light source manufacturer, the color temperature formed by the packaged blue light emitting diode chip and the fluorescent glue layer is set to have a color temperature difference with the target color temperature, and the pre-modification glue layer is modified to be close to the target color temperature. When the packaged light source is filled with transparent glue by a lamp manufacturer, the color temperature of the emitted light will not be deviated or the deviation is very small, so that the color temperature of the light of the lamp terminal is closer to the required color temperature.