Broadband terahertz metamaterial absorber based on L-shaped structures

A metamaterial and terahertz technology, applied in the field of broadband terahertz metamaterial absorbers, can solve the problems of limited number of resonant unit structures, limited number of stacked layers, complicated process, etc., and achieve the effect of easy integration and simple graphic structure

Active Publication Date: 2015-02-18
BEIJING UNIV OF TECH +1
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Problems solved by technology

The first method, due to the limited number of resonant unit structures that can be tiled in the plane, limits the broadening of the absorption bandwidth
In the second method, due to the need for multiple alignments during the processing process, the process is complex and the number of stacked layers is limited, which also limits the bandwidth of the absorber.

Method used

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  • Broadband terahertz metamaterial absorber based on L-shaped structures
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  • Broadband terahertz metamaterial absorber based on L-shaped structures

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Embodiment Construction

[0019] The technical solution of the present invention will be further described below in conjunction with the examples, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be covered by the technical solution of the present invention. in the scope of protection.

[0020] A broadband terahertz metamaterial absorber based on an L-shaped structure, such as figure 1 , 2 As shown, it includes a metal reflective layer, a dielectric layer and a metal pattern layer. The metal reflective layer is a continuous metal aluminum film with a conductivity of 1×10 7 S / m, the thickness is 100nm; the dielectric layer is a silicon dioxide film, the complex refractive index is 2.0+0.025i, and the thickness of the medium is 6μm; the material of the metal pattern layer is aluminum, and the thickness is 100nm. Among them, th...

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Abstract

The invention discloses a broadband terahertz metamaterial absorber based on L-shaped structures and belongs to the technical field of metamaterials and electromagnetic function materials. The broadband terahertz metamaterial absorber comprises a metal reflection layer, a dielectric layer and a metal pattern layer, the metal reflection layer is a continuous metal thin film, thickness of the metal reflection layer is larger than skin depth of working terahertz wave, the dielectric layer is positioned between the metal reflection layer and the metal pattern layer and is a silicon dioxide thin film, the metal pattern layer is formed by periodically arranging the L-shaped unit metamaterial structures, and each L-shaped unit metamaterial structure is formed by connecting a horizontal arm and a vertical arm which are perpendicular to each other. By reasonably designing geometric size and lattice period of the L-shaped structures and thickness of the dielectric layer in the middle, the characteristic that electromagnetic waves vertically coming to the surface of a metamaterial are absorbed completely can be realized. The broadband terahertz metamaterial absorber is simple in graph pattern and needless of stacking of multiple layers of materials, has characteristics of wide frequency band and high absorptivity and can be used for an electromagnetic wave collecting and detecting device.

Description

technical field [0001] The invention belongs to the technical field of metamaterials and electromagnetic functional materials, and relates to a terahertz absorber, in particular to a broadband terahertz metamaterial absorber based on an L-shaped structure. Background technique [0002] Terahertz waves generally refer to electromagnetic waves with frequencies in the range of 0.1 THz to 10 THz (wavelengths in the range of 3 mm to 30 μm). From the perspective of frequency, this band is located between millimeter waves and infrared rays, and belongs to the far-infrared band; from the perspective of energy, it is between electrons and photons. For a long time, due to the lack of effective terahertz source and detection technology, people have little understanding of this wave, so that the phenomenon of "terahertz blank" has been formed. Terahertz technology is a very important cross-frontier field, which provides a very attractive opportunity for technological innovation, nation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00
CPCG02B1/002G02B5/003
Inventor 严辉吕晶袁瑞玚宋雪梅耿超张铭王如志汪浩王波侯育冬朱满康刘晶冰
Owner BEIJING UNIV OF TECH
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