Composite silicon hemisphere/graphene broadband terahertz metamaterial absorber

A metamaterial, graphene technology, applied in the direction of instruments, optics, electrical components, etc., can solve problems such as limiting absorption performance

Active Publication Date: 2021-07-06
BEIJING UNIV OF TECH
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Although the above two methods can broaden the absorption bandwidth to a certain extent, because both need to pattern graphene, the

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  • Composite silicon hemisphere/graphene broadband terahertz metamaterial absorber
  • Composite silicon hemisphere/graphene broadband terahertz metamaterial absorber
  • Composite silicon hemisphere/graphene broadband terahertz metamaterial absorber

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[0015] The technical solution of the present invention will be further described below in conjunction with the examples, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be covered by the technical solution of the present invention. in the scope of protection.

[0016] A composite silicon hemisphere / graphene based broadband terahertz metamaterial absorber, as figure 1 , 2 As shown, it includes metal reflective layer, dielectric layer, graphene layer and silicon hemisphere layer. The metal reflective layer is a continuous metal gold film with a conductivity of 4.561×10 7 S / m, its thickness tm=2 μm; Dielectric layer is polydimethylsiloxane (PDMS) thin film film, relative permittivity and loss tangent are 1.72 and 0.15, medium thickness ts=15 μm; Graphene layer chemical potential E=0.2eV and 0.9eV, thi...

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Abstract

The invention discloses a broadband terahertz metamaterial absorber based on composite silicon hemispheres/graphene, and belongs to the technical field of metamaterials and electromagnetic functional materials. The terahertz metamaterial absorber comprises a metal reflecting layer, a dielectric layer, a graphene layer and a silicon hemisphere layer. The metal reflecting layer is a continuous metal film, and the thickness of the metal reflecting layer is larger than the skin depth of working terahertz waves. The dielectric layer is located between the metal reflecting layer and the graphene layer and is a polydimethylsiloxane (PDMS) film; and a silicon hemisphere layer is loaded on the unpatterned graphene layer and is formed by periodically arranging compounded semi-ellipsoids and semi-spheres, and each period comprises four semi-ellipsoids which are rotationally symmetrical and a semi-sphere structure in the center. By reasonably designing the geometric dimension of the silicon hemisphere and the external voltage value of the graphene, the characteristic of completely absorbing electromagnetic waves vertically incident to the surface of the metamaterial can be realized. The structure is simple, a multi-layer stacking structure is not needed, and the broadband high-absorption characteristic is achieved.

Description

Technical field: [0001] The invention belongs to the technical field of metamaterials and electromagnetic functional materials, and relates to a terahertz absorber, in particular to a composite silicon hemisphere / graphene broadband terahertz metamaterial absorber. Background technique: [0002] The frequency range of terahertz wave (THz) is about 0.1-10THz (the wavelength range is about 3mm-30μm), which is located between microwave and infrared. It has very rich physical properties, such as strong absorption of water, strong absorption of water, and Its transparency, recognition of bio-organic macromolecules, and harmless ionization of biological tissues make it widely used in security inspection, communication, and biomedical fields. However, because there are few substances that can respond to THz waves in nature, the research on it is still very scarce. The biggest research bottleneck is the lack of detectors capable of generating effective THz responses, which greatly h...

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Application Information

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IPC IPC(8): H01Q17/00H01Q15/00G02B5/00
CPCH01Q17/008H01Q15/0086G02B5/003
Inventor 张铭孟宪睿王如志王长昊席宇鹏李赛楠张持严辉王波
Owner BEIJING UNIV OF TECH
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