Graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on anapol mode and preparation method and application of graphene metamaterial terahertz device

A graphene and metamaterial technology, which is applied in the field of terahertz metamaterial functional devices, can solve the problems of small resonance modulation depth of terahertz metamaterials, cumbersome preparation process, complicated excitation mode, etc., and achieves flexible and convenient regulation mode, convenient preparation, simple structure

Active Publication Date: 2020-06-30
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to solve the problems that the resonance modulation depth of the terahertz metamaterial

Method used

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  • Graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on anapol mode and preparation method and application of graphene metamaterial terahertz device
  • Graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on anapol mode and preparation method and application of graphene metamaterial terahertz device
  • Graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on anapol mode and preparation method and application of graphene metamaterial terahertz device

Examples

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no. 1 example

[0051] refer to figure 1 , a dynamically adjustable graphene metamaterial terahertz device based on the anapole mode, mainly includes the following parts: a single-layer metamaterial with a periodic arrangement structure, and its thickness is 2 μm. The unit structure of the periodic arrangement structure is a ring structure with a diameter of 15 μm, which is composed of two symmetrically arranged semicircular split rings 1 made of gold, each split ring 1 is composed of a ring body 2 and an extension arm 3, The extension arm 3 extends from the ring body toward the center of the ring body. An opening 4 is arranged between the two split rings, the opening runs through the diameter of the ring structure formed by the two semicircular split rings 1, and the extension arm 2 is perpendicular to the opening 4; the opening 4.1 width of the ring body 2 The width of the opening 4.2 at the extension arm 3 is 0.75 μm. Openings at the ring body 2 and the extension arm 3 are filled with gr...

no. 2 example

[0054] The preparation method of the dynamically adjustable graphene metamaterial terahertz device based on the anapole mode described in the first embodiment comprises the following steps:

[0055] Step 1. Spin-coat PMMA on high-resistance silicon by mechanical spin coating (first spin coating at a speed of 500r / min for 20s, then spin coating at a speed of 4000r / min for 60s, and then spin coating at a speed of 500r / min for 20s) The photoresist is baked at 100°C for 60 seconds, and after cooling, the exposure, development and fixing processes are performed (18 seconds of exposure with a mercury lamp, and then left in the air to allow the photoresist to react for 5 minutes; after the above reaction is completed, Put it in the developer solution for 13 seconds, then wash off the excess photoresist, then put it into deionized water to clean the developer solution and fix it, and finally blow it dry) to form the photoresist mask structure of the periodic structure, the periodic str...

no. 3 example

[0062] The preparation method of the dynamically adjustable graphene metamaterial terahertz device based on the anapole mode described in the first embodiment comprises the following steps:

[0063] Step 1. Spin-coat PMMA on high-resistance silicon by mechanical spin coating (first spin coating at a speed of 550r / min for 15s, then spin coating at a speed of 3900r / min for 55s, and then spin coating at a speed of 550r / min for 15s) and bake the photoresist at 105° C. for 55 seconds, and perform exposure, development and fixing processes (same as the second embodiment) after cooling to form the photoresist mask structure of the periodic structure, and each unit in the periodic structure The structure is composed of two symmetrically arranged semicircular split rings, an opening is formed between the two split rings, and the opening runs through the diameter of the ring structure composed of the two semicircular split rings, and the extension arm is vertical to the opening .

[00...

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Abstract

The invention relates to the technical field of terahertz metamaterial functional devices, in particular to a graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on an anapol mode and a preparation method and application of the graphene metamaterial terahertz device. The terahertz device comprises the following parts: a single-layer metamaterial witha periodic structure; the unit structure of the periodic structure is of a circular ring structure and is composed of two symmetrically-arranged semicircular split rings made of metal materials, eachsplit ring is composed of a ring body and an extension arm, and the extension arms extend from the ring bodies to the circle centers of the ring bodies; an opening is formed between the two split rings, the opening penetrates through the diameter of a circular ring structure formed by the two semicircular split rings, and the extension arms are perpendicular to the opening; openings of the ring bodies and the extension arms are filled with graphene. The Fermi energy of the graphene is adjusted through electrostatic doping, so that the conductivity of the graphene is tuned, and terahertz anapleresponse dynamic tuning is realized.

Description

technical field [0001] The invention relates to the technical field of terahertz metamaterial functional devices, in particular to a dynamically adjustable graphene metamaterial terahertz device based on an anapole mode, a preparation method and an application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Terahertz wave refers to the electromagnetic spectrum with a frequency of 0.1-10THz. It is in the cross field of electronics and photonics, and it is the last electromagnetic wave band that has not been fully developed by human beings. Relying on its unique properties such as high transmittance, broadband, and low energy, it has played an important role in man...

Claims

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Application Information

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IPC IPC(8): G02B1/00G02F1/00G02F1/355
CPCG02B1/002G02F1/0063G02F1/355
Inventor 时彦朋刘笑宇刘自正花明王陆尧
Owner SHANDONG UNIV
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