Graphene metamaterial terahertz device capable of being dynamically regulated and controlled based on anapol mode and preparation method and application of graphene metamaterial terahertz device
A graphene and metamaterial technology, which is applied in the field of terahertz metamaterial functional devices, can solve the problems of small resonance modulation depth of terahertz metamaterials, cumbersome preparation process, complicated excitation mode, etc., and achieves flexible and convenient regulation mode, convenient preparation, simple structure
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no. 1 example
[0051] refer to figure 1 , a dynamically adjustable graphene metamaterial terahertz device based on the anapole mode, mainly includes the following parts: a single-layer metamaterial with a periodic arrangement structure, and its thickness is 2 μm. The unit structure of the periodic arrangement structure is a ring structure with a diameter of 15 μm, which is composed of two symmetrically arranged semicircular split rings 1 made of gold, each split ring 1 is composed of a ring body 2 and an extension arm 3, The extension arm 3 extends from the ring body toward the center of the ring body. An opening 4 is arranged between the two split rings, the opening runs through the diameter of the ring structure formed by the two semicircular split rings 1, and the extension arm 2 is perpendicular to the opening 4; the opening 4.1 width of the ring body 2 The width of the opening 4.2 at the extension arm 3 is 0.75 μm. Openings at the ring body 2 and the extension arm 3 are filled with gr...
no. 2 example
[0054] The preparation method of the dynamically adjustable graphene metamaterial terahertz device based on the anapole mode described in the first embodiment comprises the following steps:
[0055] Step 1. Spin-coat PMMA on high-resistance silicon by mechanical spin coating (first spin coating at a speed of 500r / min for 20s, then spin coating at a speed of 4000r / min for 60s, and then spin coating at a speed of 500r / min for 20s) The photoresist is baked at 100°C for 60 seconds, and after cooling, the exposure, development and fixing processes are performed (18 seconds of exposure with a mercury lamp, and then left in the air to allow the photoresist to react for 5 minutes; after the above reaction is completed, Put it in the developer solution for 13 seconds, then wash off the excess photoresist, then put it into deionized water to clean the developer solution and fix it, and finally blow it dry) to form the photoresist mask structure of the periodic structure, the periodic str...
no. 3 example
[0062] The preparation method of the dynamically adjustable graphene metamaterial terahertz device based on the anapole mode described in the first embodiment comprises the following steps:
[0063] Step 1. Spin-coat PMMA on high-resistance silicon by mechanical spin coating (first spin coating at a speed of 550r / min for 15s, then spin coating at a speed of 3900r / min for 55s, and then spin coating at a speed of 550r / min for 15s) and bake the photoresist at 105° C. for 55 seconds, and perform exposure, development and fixing processes (same as the second embodiment) after cooling to form the photoresist mask structure of the periodic structure, and each unit in the periodic structure The structure is composed of two symmetrically arranged semicircular split rings, an opening is formed between the two split rings, and the opening runs through the diameter of the ring structure composed of the two semicircular split rings, and the extension arm is vertical to the opening .
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