16 results about "Polyimide dielectric" patented technology

The invention discloses a multi-element random copolymerization polyimide dielectric film as well as a preparation method and application thereof, and belongs to the technical field of dielectric materials. The thin film material is prepared from at least one diamine monomer and at least two dianhydride monomers through a random copolymerization reaction. The specific method comprises the following steps: randomly copolymerizing one or more diamine monomers and two or more anhydride monomers through a conventional two-step method to synthesize a pure polymer, casting and coating the copolymerized polyamide acid synthesized by the reaction into a film shape, carrying out thermal imidization, demolding with deionized water, and drying to obtain the material. The film is suitable for high-temperature dielectric energy storage in high-temperature film capacitors, vehicle-mounted power electronics, aerospace power supplies and oil well / geothermal power systems. Compared with the existing filler modified or monomer homopolymerized PI, the preparation process is simple, the dielectric property is stable, the energy storage density and the breakdown strength at the high temperature of 200 DEG C and the high field are remarkably improved, and excellent stability and manufacturability are achieved.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

The application relates to the technical field of energy storage materials, and particularly discloses a dielectric composition, a polyimide dielectric film, a preparation method and application. The dielectric composition provided by the application is a naphthylamine block polyamide acid, a naphthalene anhydride block polyamide acid, a polyamide acid and a transition metal phthalocyanine-based covalent organic framework material. The polyimide dielectric film prepared from the dielectric composition can still maintain a high energy density under a high-temperature environment, and the energy storage density under a 150 DEG C condition can reach 2.70 J / mm 2 The breakdown field strength can reach 350 kV / mm or more, and the Young's modulus can reach 2.2 GPa or more, so that the balance between the high-temperature energy storage performance and the mechanical performance is achieved, and the polyimide dielectric film can be widely applied to the fields of high-temperature energy storage devices, aerospace power systems, high-temperature industrial sensors and the like, and has a wide application prospect.

The invention discloses a polyimide dielectric film containing carboxyl betaine and a preparation method thereof. The carboxyl betaine-containing polyimide dielectric film is prepared from carboxyl betaine-containing polyimide, and the carboxyl betaine-containing polyimide is prepared by the following steps: firstly, taking a precursor of carboxyl betaine, m-phenylenediamine and bisphenol a type diether dianhydride as monomers, and carrying out condensation polymerization to obtain polyamide acid; carrying out complete imidization on the polyamide acid under the action of a catalyst isoquinoline to obtain polyimide containing a precursor; and reacting the polyimide containing the precursor with sodium bromoacetate to obtain polyimide containing carboxyl betaine. The zwitterions are introduced into the polyimide structure to improve the dielectric and energy storage performance of the polyimide dielectric film, and meanwhile, the preparation method has the advantages of being low in cost, simple in process, controllable and adjustable in performance, suitable for large-scale application and the like.

The invention relates to the field of dielectric films, in particular to a polyimide dielectric film and a preparation method and application thereof. The preparation method of the polyimide dielectric film comprises the following steps: mixing 1, 3-m-phenylenediamine, a tC diamine monomer, an anhydride monomer and an organic solvent in an inert atmosphere to obtain a mixed solution; carrying out condensation polymerization on the mixed solution in an inert atmosphere to obtain a precursor solution; and coating a substrate with the precursor solution for imidization to obtain the polyimide dielectric film. Semi-aromatic PI constructed by common MPD is used as a matrix, tC type diamine monomers with high rigidity and configuration disturbance characteristics are copolymerized and introduced into a main chain in a controllable proportion, cooperative regulation and control of chain segment thermal motion and an aggregation state structure are achieved, and therefore better high-temperature energy storage stability and breakdown reliability are obtained.

This application relates to the field of dielectric material preparation technology, and more particularly to a semi-aromatic polyimide dielectric film and its preparation method. The preparation method of the semi-aromatic polyimide dielectric film includes the following steps: mixing an aliphatic dianhydride monomer, a rigid diamine monomer containing side ethyl groups, and a solvent to perform a copolymerization reaction to obtain a precursor solution; after forming the precursor solution into a film, performing an imidization reaction to obtain the semi-aromatic polyimide dielectric film; wherein the imidization reaction includes a first heat preservation stage, a second heat preservation stage, and a third heat preservation stage. This application improves the crosslinking density by introducing ethyl side chains into the semi-aromatic polyimide structure, and simultaneously controls the short-range ordered structure using a specific imidization process, thereby controlling the structure of the resulting dielectric film at the molecular level and significantly improving the high-temperature energy storage performance of the dielectric film.

The application discloses a kind of polyimides containing halogenated fluorene structure, dielectric film material and preparation method and application thereof, belong to energy storage material technical field.Polyimides containing halogenated fluorene structure has the following repeating structural unit:;Wherein, X is halogen substituent, it is introduced by main chain simultaneously trifluoromethyl side group and halogenated fluorene structure unit, give it good high-temperature dielectric property and high-temperature energy storage performance, and its solubility and film-forming performance are good, easy to process into shape, meet the high energy density and high efficiency energy storage demand of new generation power electronics, aerospace and deep space exploration system under harsh environment.

The invention relates to the technical field of terahertz communication, in particular to a terahertz encryption metasurface based on incidence angle and emergence angle correlation regulation and control. The super-structure surface comprises a high-resistance silicon substrate, a polyimide dielectric layer and an asymmetric gold film super-structure unit array. Each unit encodes a nonlinear mapping relation of an incident angle and an emergent angle through a specific rotation angle. Only when the incident angle and the emergent angle are matched with a preset function, a strong reflection response is generated along with characteristic polarization conversion, otherwise, the signal is significantly suppressed. An angle sensing feedback circuit and a PIN diode suppression circuit are further integrated, so that the incidence legality can be verified in real time, and illegal detection can be blocked; in some embodiments, a graphene grid control layer is introduced, and online reconfiguration of a mapping function is supported. The structure realizes high-security terahertz encryption with physically unclonable and multi-dimensional feature binding, and is suitable for anti-counterfeit labels and PUF devices.

The invention relates to a terahertz metasurface multifunctional space optical simulation differentiator which comprises a bottom metal film, a polyimide dielectric layer and a metal layer arranged on the polyimide dielectric layer, the metal layer is in an S shape formed by connecting two U-shaped split rings, and the metal layer and the bottom metal film form a Fabry-Perot resonant cavity. Polarization angular dispersion can be obviously regulated and controlled, a required transfer function can be directly realized in a Fourier space, first-order and second-order space simulation differential calculation with an ultra-large numerical aperture is simultaneously realized by utilizing a fixed structure, and the multifunctional space simulation differentiator can be miniaturized and integrated; signal and image processing is carried out by using the angle-dependent response of the superstructure, under the dual-polarization incident light, the numerical aperture is maximally close to 1, and the spatial resolution limit is 1.27 lambda.

This invention discloses a high-insulation binaphthalene polyimide dielectric film, its preparation method, and its applications, belonging to the field of high-performance insulating materials technology. Through molecular structure regulation, this invention introduces a large-volume, non-coplanar binaphthalene structure into the polyimide molecular chain. On one hand, the non-planar helical configuration between the two naphthalene rings suppresses the intra-chain conjugation effect, weakening the carrier transition capability along the main chain. On the other hand, the large-volume binaphthalene structural unit effectively disrupts the regular arrangement of the molecular chain, increasing the internal free volume and inter-chain spacing, thus increasing the length and tortuosity of the carrier migration path, increasing the energy barrier height that carriers must overcome during migration, and weakening the inter-chain carrier mobility. The synergistic effect of the above-mentioned intra-chain and inter-chain carrier migration suppression significantly improves the breakdown strength of polyimide and greatly extends its corona resistance lifetime.

The application provides a kind of pyridine structure containing polyimide and its preparation method and application.The structural formula of the polyimide is as shown in formula (II) or formula (III):in formula (II), m and n are positive integers, and m≥n≥10;Group is the group containing fluorine phenyl group.Polyimide shown in formula (II) introduces bulky group and trifluoromethyl at the same time, also introduces hydroxyl group, realizes polyimide platform, provides the possibility for subsequent introduction of other different groups;Chemical imine method and thermal imine method are combined in the process of imidization, compared with traditional method, the time required for imidization is shortened.Hydroxyl group is introduced into the polyimide shown in formula (II), which significantly reduces the dielectric constant;Polyimide shown in formula (III) introduces fluorobenzene structure on the basis of polyimide shown in formula (II), further realizes the reduction of polyimide dielectric constant.

The invention discloses a method for manufacturing a redistribution layer based on direct chemical plating of an aluminum pad, and relates to the technical field of semiconductor processing, and the method comprises the following steps: wafer cleaning, photoresist coating, PAB soft baking, RDL exposure, developing, Descum treatment, activating treatment, RDL chemical plating and photoresist removal. According to the invention, a necessary, expensive and complex sputtering UBM process in traditional semiconductor packaging is abandoned, and a simplified process for directly forming RDL on the surfaces of dielectric layers such as an aluminum bonding pad, a passivation layer and polyimide at one time through selective activation and chemical plating technologies is creatively developed; meanwhile, due to the fact that a metal interface layer is reduced, the stress problem caused by mismatching of thermal expansion coefficients is solved, and better interface integrity is provided through direct combination of the chemical plating metal layer and the aluminum pad.

The utility model provides an FPC antenna board with a multilayer structure, which belongs to the technical field of FPC antenna board manufacturing, and comprises a substrate, a cover fixedly arranged on the side wall of the substrate, and a transmitting assembly arranged in the inner cavity of the substrate. According to the utility model, through the arrangement of the multi-layer structure, the high-frequency transmitting antenna is fixed on the outer surface of the wrapping shell and is connected with auxiliary components including the printing layer, the connecting layer, the dielectric layer, the heat dissipation layer and the supporting layer, so that high-efficiency signal transmitting and receiving are realized, and a closed circuit formed by the hot melting copper printing layer ensures stable transmission of signals; the electric soldering tin connecting layer and the polyimide dielectric layer provide reliable electrical connection and circuit protection, the hollow design of the aluminum heat dissipation layer effectively improves the heat dissipation efficiency, the glass fiber supporting layer enhances the overall structural strength and thermal conductivity, the performance stability, durability and extreme environment adaptability of the antenna board are improved, and the service life of the antenna board is prolonged. And an efficient and reliable antenna solution is provided for wireless communication equipment.

This application belongs to the field of capacitor technology, and particularly relates to a modified polyimide dielectric film material, its preparation method, and its application. The provided modified polyimide dielectric film material uses polarized modified dianhydride / titanium dioxide nanoparticles to modify the dielectric film material, thereby improving its energy storage characteristics at high temperatures. The film capacitor assembled after being made into a metallized film is suitable as an energy storage device at high temperatures. This solves the technical problem of low performance of polyimide dielectric film materials in the prior art.

The present invention relates to the technical field of high-temperature energy storage dielectric films, and discloses a preparation method of a porphyrin cross-linker modified polyimide high-temperature energy storage dielectric film. Polyamic acid (PAA) precursor is obtained by condensing 4,4'-diaminodiphenyl ether (ODA) and pyromellitic dianhydride (PMDA), and introducing ultra-low content of 5,10,15,20-tetrakis(4-aminophenyl)porphyrin (TAPP) as a cross-linker. Cross-linked polyimide film (PCPI) is prepared by solution coating and gradient thermal imidization. The terminal amino groups of TAPP molecules form a covalent cross-linking network with PAA, and the porphyrin macrocycle π-conjugated system provides deep-level charge traps, significantly inhibiting high-temperature carrier migration. The breakdown strength of the optimal sample PCPI-0.1 reaches 475 MV / m at 200 °C, and the discharge energy density is 4.97 J / cm 3 , the charge-discharge efficiency is ≥85%. At the same time, it has a high glass transition temperature, high thermal stability, excellent cycle stability and film-forming uniformity. The solution coating process is simple to prepare, and the process conditions are simple and controllable, which is suitable for the batch production of high-temperature and high-energy storage polyimide dielectric films.