38 results about "Polyimide dielectric" patented technology

The invention discloses a preparation method and application of a high-thermal-conductivity polyimide-based paint film for a transformer winding, and relates to a preparation method and application of a polyimide-based paint film. The invention aims to solve the problem of poor heat-conducting property of the existing polyimide dielectric material. The method comprises the following steps: 1, preparing boron nitride nanosheet powder; 2, modifying the surface of the boron nitride nanosheet powder; 3, adding diamine and the boron nitride nanosheet subjected to surface modification into an aprotic polar solvent; 4, adding dianhydride; and 5, carrying out gradient heating to carry out imidization. The heat conductivity coefficient of the high-heat-conductivity polyimide-based paint film for the transformer winding reaches 0.35 W / (m.K) and is improved by 183% compared with that of a pure polyimide material, and meanwhile the high-heat-conductivity polyimide-based paint film has high insulation performance and is used for preparing high-heat-conductivity and high-insulation electrical insulation devices; the electrical insulation device comprises but is not limited to a high-power density motor, a transformer enameled wire and a high-frequency power transformer.

The invention discloses a multi-element random copolymerization polyimide dielectric film as well as a preparation method and application thereof, and belongs to the technical field of dielectric materials. The thin film material is prepared from at least one diamine monomer and at least two dianhydride monomers through a random copolymerization reaction. The specific method comprises the following steps: randomly copolymerizing one or more diamine monomers and two or more anhydride monomers through a conventional two-step method to synthesize a pure polymer, casting and coating the copolymerized polyamide acid synthesized by the reaction into a film shape, carrying out thermal imidization, demolding with deionized water, and drying to obtain the material. The film is suitable for high-temperature dielectric energy storage in high-temperature film capacitors, vehicle-mounted power electronics, aerospace power supplies and oil well / geothermal power systems. Compared with the existing filler modified or monomer homopolymerized PI, the preparation process is simple, the dielectric property is stable, the energy storage density and the breakdown strength at the high temperature of 200 DEG C and the high field are remarkably improved, and excellent stability and manufacturability are achieved.

The invention relates to the field of dielectric energy storage materials, and discloses a polyimide-based composite dielectric film material and a preparation method thereof.The dielectric film is prepared from, by mass, 4-20 parts of modified barium strontium titanate and 100 parts of fluorinated polyamide acid solution, the modified barium strontium titanate is prepared from the following raw materials: hydroxylated barium strontium titanate, 3-glycidyl ether oxypropyl trimethoxy silane, perfluoropolyether alcohol and a catalyst, and the fluorinated polyamide acid solution is prepared from the following raw materials: a fluorine-containing diamine monomer and a fluorine-containing dianhydride monomer; according to the technical scheme, the polyimide film dielectric film is prepared from fluorinated polyamide and modified silane barium strontium titanate, the dispersity of barium strontium titanate in a polyimide matrix is remarkably improved, the compatibility of barium strontium titanate and fluorinated polyimide is remarkably improved, and the dielectric energy storage performance of the dielectric film is remarkably improved; the hydroxylated barium strontium titanate is modified through the 3-glycidyl ether oxypropyl trimethoxy silane and the perfluoropolyether alcohol, so that the dielectric loss of the dielectric film is remarkably reduced.

The invention relates to the technical field of dielectric materials, in particular to a heterocycle-containing semi-aromatic polyimide dielectric film as well as a preparation method and application thereof. The heterocycle-containing semi-aromatic polyimide dielectric film provided by the invention is obtained by carrying out polymerization and imidization reaction on diamine containing a benzimidazole structure or a benzoxazole structure and alicyclic dianhydride. The polyimide dielectric film not only has a high dielectric constant, but also can significantly inhibit high-temperature conductivity loss, and is efficiently and stably used in an extreme environment (T = 150-300 DEG C).

The invention relates to a chip three-dimensional security packaging structure and packaging method, the chip three-dimensional security packaging structure comprises a cipher chip, a back layer, a middle layer and a rewiring layer, the middle layer is provided with an inverted trapezoidal groove, the cipher chip is arranged in the groove, and a TSV is arranged on the middle layer close to the groove; copper lines are embedded in the back layer, are uniformly arranged in an S shape and are electrically connected with the TSVs; the rewiring layer comprises a polyimide dielectric layer and a copper wire, the lower end face of the polyimide dielectric layer is filled in the groove and covers the groove and the password chip, the copper wire is arranged in the polyimide dielectric layer, one end of the copper wire is electrically connected with the TSV and the password chip, the other side end of the copper wire penetrates out of the polyimide dielectric layer to be connected with a solder ball, and a packaging method is set. The whole chip is wrapped by the metal wiring net formed by the copper lines in the back layer, the copper conductors in the middle layer and the copper wires in the re-wiring layer, three-dimensional safety protection of the chip is achieved, and the problem that the packaging difficulty is large is solved in combination with a packaging method.

The invention relates to the field of terahertz metamaterial devices, and provides a reconfigurable broadband / multi-frequency terahertz wave absorber based on vanadium dioxide. The wave absorber is composed of metamaterial square units which are arranged periodically, and adjacent units are gapless. Each unit is composed of six layers of structures including a vanadium dioxide resonance layer, an upper polyimide dielectric layer, a vanadium dioxide thin film layer, a copper resonance layer, a lower polyimide dielectric layer and a copper substrate layer. Vanadium dioxide can realize reversible phase change between a metal state and an insulation state through external excitation. In a metal state, the wave absorber has an ultra-wideband terahertz wave absorption function; and in an insulated state, a double-narrow-band absorption function is shown. According to the invention, the reconstruction of the absorption frequency and the bandwidth of the terahertz wave absorber is effectively realized, the problems of complex structure and fixed function of a traditional terahertz sensor are solved, and the potential of the terahertz wave absorber in sensing application of a single narrow-band wave absorber is further discussed.

The application relates to the technical field of energy storage materials, and particularly discloses a dielectric composition, a polyimide dielectric film, a preparation method and application. The dielectric composition provided by the application is a naphthylamine block polyamide acid, a naphthalene anhydride block polyamide acid, a polyamide acid and a transition metal phthalocyanine-based covalent organic framework material. The polyimide dielectric film prepared from the dielectric composition can still maintain a high energy density under a high-temperature environment, and the energy storage density under a 150 DEG C condition can reach 2.70 J / mm 2 The breakdown field strength can reach 350 kV / mm or more, and the Young's modulus can reach 2.2 GPa or more, so that the balance between the high-temperature energy storage performance and the mechanical performance is achieved, and the polyimide dielectric film can be widely applied to the fields of high-temperature energy storage devices, aerospace power systems, high-temperature industrial sensors and the like, and has a wide application prospect.

The invention discloses a polyimide dielectric film containing carboxyl betaine and a preparation method thereof. The carboxyl betaine-containing polyimide dielectric film is prepared from carboxyl betaine-containing polyimide, and the carboxyl betaine-containing polyimide is prepared by the following steps: firstly, taking a precursor of carboxyl betaine, m-phenylenediamine and bisphenol a type diether dianhydride as monomers, and carrying out condensation polymerization to obtain polyamide acid; carrying out complete imidization on the polyamide acid under the action of a catalyst isoquinoline to obtain polyimide containing a precursor; and reacting the polyimide containing the precursor with sodium bromoacetate to obtain polyimide containing carboxyl betaine. The zwitterions are introduced into the polyimide structure to improve the dielectric and energy storage performance of the polyimide dielectric film, and meanwhile, the preparation method has the advantages of being low in cost, simple in process, controllable and adjustable in performance, suitable for large-scale application and the like.

The invention discloses an adjustable ultra-wideband terahertz metamaterial wave absorber, and belongs to the technical field of terahertz wave absorbers. The wave absorber is composed of a plurality of same metamaterial structure units which are periodically arranged, and each metamaterial structure unit is made of three layers of composite materials, wherein the first layer is a graphene pattern layer, the second layer is a polyimide dielectric layer, and the third layer is a copper reflecting layer. Wherein the graphene pattern layer adopts a combined design of four groups of square and L-shaped structures, and the four groups of structures form a biaxial symmetry layout through geometric coupling. The structure has the characteristics of wide absorption bandwidth, high absorption rate and dynamic adjustability, can realize more than 90% of efficient absorption in the frequency band of 2.28-4.68 THz, and can adjust the Fermi level of the graphene by externally applying bias voltage to realize rapid switching between the absorption state and the reflection state. The device is suitable for various application scenes such as terahertz communication, sensing and stealth.

The invention discloses a multi-mode circular dichroism chiral metasurface design based on an adjustable material. The metasurface structure is composed of a thermal phase change material VO2 and an electric phase change material Dirac on the upper layer, a polyimide dielectric layer in the middle and a gold substrate. The provided circular dichroism chiral metasurface can achieve regulation and control of the transmissivity and the reflectivity within the frequency band of 0.6-0.8 THz, and then the reflection circular dichroism is effectively controlled. The maximum value of the reflection circular dichroism of the metasurface can reach 0.69, the minimum value of the reflection circular dichroism of the metasurface can be close to 0, and regulation and control functions under four working modes are achieved. By changing the conductivity of the thermal phase change material VO2 and the electrical phase change material Dirac, dynamic regulation and control of four circular dichroism states are realized.

The invention discloses a block copolymerized polyimide film and application thereof in a capacitor, and belongs to the technical field of dielectric polymer materials and film capacitors. A molecular chain in the copolymer is formed by alternately connecting flexible soft chain segments and rigid hard chain segments, and the soft chain segments and the hard chain segments are incompatible in thermodynamics and can be driven in the polymer to form a nano-scale microphase separation structure. A fluorine-containing electron withdrawing group and a sulfone-containing large dipole moment group are introduced into a hard chain segment, so that a nano microphase separation interface is formed in the polymer and can be used as a deep energy level trap, and the electron forbidden band width of the material is synergistically widened. The design inhibits carrier generation and migration under high temperature and high electric field, and improves the breakdown field strength and dielectric constant of the material. The block copolymer film has high static energy storage density, excellent charge and discharge efficiency and cycling stability exceeding 100,000 times, and is suitable for high-temperature-resistant and high-energy-density film capacitors and electrical insulating materials.

The application discloses a kind of polyimide dielectric film and its preparation method and application, belong to material field.The material will PDA be dissolved in solvent after adding cesium fluoride, then stirring 20~35min in oxygen-free environment, finally under the condition of stirring, reaction is carried out for 18~20h at 75~85 ℃, reaction mixture is filtered, finally obtained FPDA;After FPDA is dissolved in solvent, then under the condition of-5~5 ℃, diphenyl ether dianhydride is added in batches and stirred for 8~10h, to obtain polyamide acid PAA solution, solution is dropped on glass substrate and is treated by thermal imidization reaction, after reaction, glass substrate is placed in deionized water and film is stripped, and film with thickness of 1~20 μm is obtained.The product prepared by the application has lower leakage current loss, higher glass transition temperature and charge-discharge efficiency, and has overall excellent energy storage characteristics.

The invention relates to the technical field of dielectric materials, in particular to a blended polyimide dielectric film and a preparation method and application thereof. The blended polyimide dielectric film provided by the invention comprises benzimidazole semi-aromatic polyimide and polyetherimide, wherein the mass ratio of the benzimidazole semi-aromatic polyimide to the polyetherimide is 1: (0.25-4). The blended polyimide dielectric film has excellent high-temperature energy storage performance and can be applied at 200 DEG C.

The invention relates to a terahertz transmission array metasurface antenna based on continuous phase modulation, which is formed by arranging N * N metasurface units, and each unit structure comprises a top arc metal corner structure, a middle polyimide dielectric layer and a bottom arc metal strip, the transmission amplitude gt of the 2THz-frequency linearly polarized electromagnetic waves is realized by adjusting the distance between the top-layer metal strips, the length of the bottom-layer metal strips and the corresponding central angle of the arc-shaped structure; and the continuous phase modulation of 0.8 is realized. The unit structure parameters are determined through collaborative design of a neural network and a genetic algorithm, when N is equal to 25 and the focal diameter ratio is 1, the antenna can efficiently convert spherical waves emitted by a feed source at the focal point into plane waves, the far-field gain of the antenna reaches 29.6 dBi, and the aperture efficiency is 52%. The invention has the characteristics of simple structure, easiness in manufacturing and high transmission efficiency, and can be widely applied to the fields of terahertz communication, imaging and the like.

The invention relates to the field of dielectric films, in particular to a polyimide dielectric film and a preparation method and application thereof. The preparation method of the polyimide dielectric film comprises the following steps: mixing 1, 3-m-phenylenediamine, a tC diamine monomer, an anhydride monomer and an organic solvent in an inert atmosphere to obtain a mixed solution; carrying out condensation polymerization on the mixed solution in an inert atmosphere to obtain a precursor solution; and coating a substrate with the precursor solution for imidization to obtain the polyimide dielectric film. Semi-aromatic PI constructed by common MPD is used as a matrix, tC type diamine monomers with high rigidity and configuration disturbance characteristics are copolymerized and introduced into a main chain in a controllable proportion, cooperative regulation and control of chain segment thermal motion and an aggregation state structure are achieved, and therefore better high-temperature energy storage stability and breakdown reliability are obtained.

The present application relates to the technical field of polymer materials, and particularly relates to a polyimide precursor resin, a polyimide material and a preparation method and application of a photosensitive resin. The polyimide precursor resin is obtained by polycondensation of a diamine monomer and an aromatic tetracarboxylic dianhydride. By designing basic diamine monomers with different side group positions and flexible bridging groups, the free volume and degree of freedom of the polymer chain are increased, and the polymerization reaction with anhydride is more likely to occur. Compared with the polyimide material containing a nitrogen-containing heterocyclic ring in the main chain, the nitrogen-containing heterocyclic ring in the side chain is more conducive to increasing the interaction between molecules to improve the thermal stability of the material. Meanwhile, the larger side group can increase the free volume of the molecular chain and reduce the dielectric constant, which is conducive to reducing the transmission loss of the polyimide dielectric material. The prepared polyimide precursor resin can accelerate the reaction process of imidization in the process of heat curing, so that the imidization rate of the polyimide precursor resin is significantly improved at 200 DEG C.

This application relates to the field of dielectric material preparation technology, and more particularly to a semi-aromatic polyimide dielectric film and its preparation method. The preparation method of the semi-aromatic polyimide dielectric film includes the following steps: mixing an aliphatic dianhydride monomer, a rigid diamine monomer containing side ethyl groups, and a solvent to perform a copolymerization reaction to obtain a precursor solution; after forming the precursor solution into a film, performing an imidization reaction to obtain the semi-aromatic polyimide dielectric film; wherein the imidization reaction includes a first heat preservation stage, a second heat preservation stage, and a third heat preservation stage. This application improves the crosslinking density by introducing ethyl side chains into the semi-aromatic polyimide structure, and simultaneously controls the short-range ordered structure using a specific imidization process, thereby controlling the structure of the resulting dielectric film at the molecular level and significantly improving the high-temperature energy storage performance of the dielectric film.

This invention relates to a broadband amplitude-coherent terahertz metasurface device, comprising a top metal structure layer, an intermediate flexible polyimide dielectric layer, and a bottom metal plate layer arranged sequentially from top to bottom. The top metal structure layer, the intermediate flexible polyimide dielectric layer, and the bottom metal plate layer form a Fabry-Perot resonator. This invention achieves simultaneous amplitude and phase modulation solely through rotating the top metal structure of the subwavelength unit structure, effectively solving the problems of large size and low precision of Airy beamforming devices. This enables flexible modulation of broadband (0.95-1.8 THz) one-dimensional and two-dimensional Airy beams in the terahertz band, opening up possibilities for its application in high-capacity, obstacle-avoiding wireless communication.

The invention relates to the technical field of polymer dielectric preparation, in particular to a high-temperature-resistant polyimide dielectric film and a preparation method and application thereof. The conjugated structure of the high-temperature-resistant polyimide dielectric film provided by the invention mainly adopts out-of-plane orientation or in-plane orientation. The polyimide dielectric film still has excellent electrical insulation performance and energy storage performance under the condition of high temperature.

The invention belongs to the technical field of photoelectric detectors, and discloses a spectrum-width-adjustable near-infrared avalanche photoelectric detector and a preparation method thereof, and the spectrum-width-adjustable near-infrared avalanche photoelectric detector sequentially comprises a silicon-on-insulator substrate, an intrinsic silicon layer, a p-type silicon charge region and a germanium-silicon alloy layer from bottom to top; the upper surface of the silicon-on-insulator substrate, the intrinsic silicon layer table-board structure and the germanium-silicon alloy layer table-board structure are coated by an oxidation dielectric layer; a polyimide dielectric layer is spin-coated on the outer surface of the oxidation dielectric layer; a first metal electrode is arranged in the center of the top of the germanium-silicon alloy layer, penetrates through the polyimide dielectric layer and is in contact with the upper surface of the germanium-silicon alloy layer; a second metal electrode is arranged on the back face of the silicon-on-insulator substrate and located on the periphery of the oxidation dielectric layer. According to the invention, visible light-near-infrared wide spectrum detection and near-infrared band special detection can be respectively realized under the conditions of forward light incidence and backward light incidence, and a band multiplexing detection function is realized.

The invention relates to the technical field of multi-band terahertz metamaterial wave absorbing devices, and provides a terahertz multi-band wave absorbing device insensitive to polarization. The wave absorber is composed of a plurality of periodically arranged square units, and each unit is composed of a three-layer structure including a gold pattern layer, a polyimide dielectric layer and a gold substrate layer from top to bottom. The gold pattern layer and the gold substrate layer are attached to the upper surface and the lower surface of the polyimide dielectric layer respectively, and the geometric centers are on the same straight line. The designed wave absorber is insensitive to the polarization direction of incident electromagnetic waves due to the symmetrical structure, and has good polarization stability. The multiband wave absorber provided by the invention has the advantages of simple structure and capability of realizing high absorption at four frequency bands, and shows wide application prospects in the fields of terahertz sensing, filtering, communication and the like.

The invention discloses a high-temperature-resistant high-energy-storage-density silicon-containing polyimide dielectric thin film material and a preparation method thereof. The high-temperature-resistant high-energy-storage-density silicon-containing polyimide dielectric thin film material is prepared by the following steps: firstly, carrying out nucleophilic substitution reaction on silicon-containing diamine, aromatic fluorine-containing diamine and aromatic fluorine-containing dianhydride monomers to obtain a reaction solution containing polyamide acid; and carrying out imidization reaction after preparing the membrane. The high-temperature-resistant high-energy-storage-density silicon-containing polyimide dielectric thin film material provided by the invention has excellent dielectric property, heat resistance, flexibility and energy storage performance, and realizes synergistic and nonlinear improvement of breakdown strength and energy storage density under extreme conditions of 150-200 DEG C through a molecular-level uniform siloxane copolymerization structure; the performance is far better than that of traditional polyimide and physical blending composite materials, and the material is suitable for harsh working environments.

The application discloses a kind of polyimides containing halogenated fluorene structure, dielectric film material and preparation method and application thereof, belong to energy storage material technical field.Polyimides containing halogenated fluorene structure has the following repeating structural unit:;Wherein, X is halogen substituent, it is introduced by main chain simultaneously trifluoromethyl side group and halogenated fluorene structure unit, give it good high-temperature dielectric property and high-temperature energy storage performance, and its solubility and film-forming performance are good, easy to process into shape, meet the high energy density and high efficiency energy storage demand of new generation power electronics, aerospace and deep space exploration system under harsh environment.

The application discloses a preparation method and application of a physical cross-linking polyimide dielectric composite material based on a supramolecular structure and relates to the technical field of dielectric materials. 1,1-di(4-aminophenyl)cyclohexane is used as a diamine monomer, 4,4-hexafluoroisopropyl phthalic anhydride is used as a dianhydride monomer, a mixing reaction is carried out in a solvent, and single-(6-amino-6-deoxy)-beta-cyclodextrin is added in the mixing reaction process to carry out chain end bonding, the reaction solution is coated into a film shape, and after heat treatment, peeling and drying are carried out, the physical cross-linking polyimide dielectric composite material based on the supramolecular structure is obtained. Under the premise of maintaining ultralow dielectric loss, the breakdown strength and the energy storage density of the polyimide dielectric composite material at high temperature are greatly improved, a potential new type of material is provided for a high-temperature high-field thin film capacitor, and a brand-new technical idea is provided for structure optimization of the polyimide and combination with the supramolecular material in the future.

The invention relates to the technical field of terahertz communication, in particular to a terahertz encryption metasurface based on incidence angle and emergence angle correlation regulation and control. The super-structure surface comprises a high-resistance silicon substrate, a polyimide dielectric layer and an asymmetric gold film super-structure unit array. Each unit encodes a nonlinear mapping relation of an incident angle and an emergent angle through a specific rotation angle. Only when the incident angle and the emergent angle are matched with a preset function, a strong reflection response is generated along with characteristic polarization conversion, otherwise, the signal is significantly suppressed. An angle sensing feedback circuit and a PIN diode suppression circuit are further integrated, so that the incidence legality can be verified in real time, and illegal detection can be blocked; in some embodiments, a graphene grid control layer is introduced, and online reconfiguration of a mapping function is supported. The structure realizes high-security terahertz encryption with physically unclonable and multi-dimensional feature binding, and is suitable for anti-counterfeit labels and PUF devices.

The invention relates to the technical field of dielectric materials, in particular to a polyimide dielectric film and a preparation method and application thereof. A repetitive unit of the polyimide dielectric film comprises a dianhydride chain segment and a diamine chain segment, the two ends of the dianhydride chain segment are of imide ring structures, the dianhydride chain segment and the diamine chain segment are connected through the imide ring structures, at least one of the dianhydride chain segment and the diamine chain segment comprises three or more benzene ring structures, and the benzene ring structures are connected through the imide ring structures. The number of the benzene ring structures in the repeating unit is at most 7, and the adjacent benzene ring structures are connected through single bonds or bridging groups. The polyimide dielectric film provided by the invention still has good insulativity and energy storage performance under high-temperature and high-electric-field coupling conditions.

The application relates to the field of medium thin films, in particular to a polyimide dielectric thin film and a preparation method and application thereof. The preparation method of the polyimide dielectric thin film comprises the following steps: mixing 1,3-m-phenylenediamine, tC type diamine monomers, acid anhydride monomers and an organic solvent to obtain a mixed solution under an inert atmosphere; the mixed solution is subjected to a polycondensation reaction under the inert atmosphere to obtain a precursor solution; and the precursor solution is coated on a substrate to perform imidization to obtain the polyimide dielectric thin film. The semi-aromatic PI constructed by the commonly used MPD is used as a matrix, the tC type diamine monomers with high rigidity and configuration disturbance characteristics are introduced into the main chain at a controllable proportion, the chain segment thermal motion and the aggregate structure are cooperatively controlled, and thus the high-temperature energy storage stability and the breakdown reliability are more optimal.

The present invention relates to a terahertz multifunctional metasurface device based on graphene and vanadium dioxide, comprising a top VO2 structural layer, a first polyimide dielectric layer, a VO2 thin film layer, a first metal structural layer, a second polyimide dielectric layer, a graphene structural layer, a silicon dioxide layer, a third polyimide dielectric layer, and a second metal structural layer, arranged sequentially from top to bottom. The present invention enables dynamic switching of transmission-type linear-circular polarization conversion, reflection-type cross-polarization conversion, and broadband absorber functions within the same structure, enabling transmission / reflection mode switching. The bandwidth of the transmission-type linear-circular polarization converter and the reflection-type cross-polarization converter can be dynamically adjusted by changing the graphene's Fermi level. Both the broadband absorber and the reflection-type cross-polarization converter can act on incident LP waves and CP waves, demonstrating the metasurface's sensitivity to the polarization of incident electromagnetic waves.

The invention relates to a terahertz metasurface multifunctional space optical simulation differentiator which comprises a bottom metal film, a polyimide dielectric layer and a metal layer arranged on the polyimide dielectric layer, the metal layer is in an S shape formed by connecting two U-shaped split rings, and the metal layer and the bottom metal film form a Fabry-Perot resonant cavity. Polarization angular dispersion can be obviously regulated and controlled, a required transfer function can be directly realized in a Fourier space, first-order and second-order space simulation differential calculation with an ultra-large numerical aperture is simultaneously realized by utilizing a fixed structure, and the multifunctional space simulation differentiator can be miniaturized and integrated; signal and image processing is carried out by using the angle-dependent response of the superstructure, under the dual-polarization incident light, the numerical aperture is maximally close to 1, and the spatial resolution limit is 1.27 lambda.

The invention discloses polyimide containing a halogenated fluorene structure, a dielectric film material as well as a preparation method and application of the dielectric film material, and belongs to the technical field of energy storage materials. The polyimide containing the halogenated fluorene structure has the following repetitive structural units, wherein X is a halogen substituent group, a trifluoromethyl side group and a halogenated fluorene-containing structural unit are introduced into a main chain at the same time, so that good high-temperature dielectric property and high-temperature energy storage property are achieved, the solubility and film-forming property are good, and processing and forming are easy; and the requirements of high energy density and high-efficiency energy storage of a new generation of power electronics, aerospace and deep space exploration systems in a severe environment are met.