151results about How to "Good bonding properties" patented technology

Disclosed are a film bulk acoustic resonator, a duplexer filter having the same, and a semiconductor package thereof. The film bulk acoustic resonator comprising: a semiconductor substrate; a lower electrode more than two layers formed at an upper surface of the semiconductor substrate; a piezoelectric layer deposited on an upper surface of the lower electrode with a certain thickness; and an upper electrode more than two layers formed at an upper surface of the piezoelectric layer, has an excellent bonding characteristic. The duplexer filter can microminiaturize a size thereof by integrating a film bulk acoustic filter formed by connecting the plurality of film bulk acoustic resonators serially and in parallel and peripheral passive elements of the film bulk acoustic filter into one semiconductor chip. Also, the semiconductor package is suitable for the duplexer filter.

The present invention relates to an acrylic pressure-sensitive adhesive sheet including: a viscoelastic material layer (X) containing hollow microspheres; and a pressure-sensitive adhesive layer (Y) provided on at least one face of the viscoelastic material layer (X) and formed from a pressure-sensitive adhesive composition including, as a main component, an acrylic copolymer which is constructed from the following monomers (m1) and (m2) as an essential monomer component, in which a content of the monomer (m1) is 50 to 99.9% by weight and a content of the monomer (m2) is 0.1 to 25% by weight based on a total amount of monomer components constituting the acrylic copolymer, (m1) an alkyl(meth)acrylate monomer including an alkyl group having 1 to 20 carbon atoms, which is represented by the following formula (1), [Chem. 1] CH2-C(R1)COOR2 (1) in which R1 represents a hydrogen atom or a methyl group, and R2 represents an alkyl group having 1 to 20 carbon atoms, (m2) an N-hydroxyalkyl(meth)acrylamide monomer including a hydroxyalkyl group having 1 to 4 carbon atoms, which is represented by the following formula (2), [Chem. 2] CH2-C(R3)CONHR4 (2) in which R3 represents a hydrogen atom or a methyl group, and R4 represents a hydroxyalkyl group having 1 to 4 carbon atoms.

The invention discloses a wood adhesive prepared by degrading soybean protein by utilizing strong basicity and a preparation method thereof, and relates to a soybean protein-based wood adhesive and a preparation method thereof. The invention solves the problems of low content of the soybean protein, high moisture content and large viscosity existing in conventional soybean adhesives or soybean protein adhesives. The product is prepared by performing a degradation reaction of defatted soybean protein powder or soybean protein isolate, strong base and water, then using strong phosphoric acid toadjust the pH value of the obtained solution, and then adding dialdehyde into the obtained solution to mix the solution evenly. The method comprises the steps of: 1, weighing; 2, preparing strong base solution, heating the strong base solution, adding the defatted soybean protein powder or the soybean protein isolate into the strong base solution under stirring, and then cooling the strong base solution to a room temperature after heating reflux; and 3, using the strong phosphoric acid to adjust the pH value, adding the dialdehyde into the solution, and stirring the solution evenly. The adhesive has the advantages of high content of the soybean protein, low moisture content and low viscosity, and can be used for preparing plywood, flakeboards and medium-density fiberboards.

The present invention provides a nitride semiconductor light emitting device which can improve long term durability by securing excellent light scattering capabilities while enhancing adhesion of a p-electrode pad and a current blocking pattern, and a method of manufacturing the same. The nitride semiconductor light emitting device includes an n-type nitride layer; an active layer formed on the n-type nitride layer; a p-type nitride layer formed on the active layer; a current blocking pattern formed on the p-type nitride layer; a transparent conductive pattern formed to cover upper sides of the p-type nitride layer and the current blocking pattern, and having a contact hole through which a portion of the current blocking pattern is exposed; and a p-electrode pad formed on the current blocking pattern and the transparent conductive pattern, and directly connected to the current blocking pattern.