214 results about "Specific mass" patented technology

This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

A method for reducing the energy spread of ions over a specific and limited mass to charge ratio range is disclosed, along with an ion deceleration arrangement for implementing such a method. An electric field, having an electric field strength E is generated by a deceleration electrode arrangement (250). Ions of a specific and limited mass to charge ratio range, but having a spread of energies, are directed into the decelerating electric field generated by the deceleration electrode arrangement (250). The decelerating electric field is then removed, once substantially all of the ions of the specific mass to charge ratio range have entered the decelerating electric field. By matching the electric field strength E to the energy spread of the ions upon entry into the electric field, the energy spread of the said ions is reduced. Preferred embodiments of the invention employ energy dispersion upstream of the ion deceleration arrangement. For example, an ion mirror arrangement (200) may be used, the ions reflecting off an ion mirror (220) within that ion mirror arrangement (200) to promote energy defocusing.

Provided is an electrophotographic photosensitive member having a conductive support, an intermediate layer provided on the conductive support, and a photosensitive layer provided on the intermediate layer in which the intermediate layer contains a polyolefin resin containing a specific component at a specific mass ratio, and a process cartridge and an electrophotographic apparatus each having the electrophotographic photosensitive member.

An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

In the mass spectrometer of the present invention, a flight space is provided before the mass analyzer, and the flight space includes a loop orbit on which ions fly repeatedly. While ions fly on the loop orbit repeatedly, ion selecting electrodes placed on the loop orbit selects object ions having a specific mass to charge ratio in such a manner that, for a limited time period when the object ions are flying through the ion selecting electrodes, an appropriate voltage is applied to the ion selecting electrodes to make them continue to fly on the loop orbit, but otherwise to make or let other ions deflect from the loop orbit. If ions having various mass to charge ratios are introduced in the loop orbit almost at the same time, the object ions having the same mass to charge ratio continue to fly on the loop orbit in a band, but ions having mass to charge ratios different from that are separated from the object ions while flying on the loop orbit repeatedly. Even if the difference in the mass to charge ratio is small, the separation becomes large when the number of turns of the flight becomes large. After such a separation is adequately achieved, the ion selecting electrodes can select the object ions with high selectivity, or at high mass resolution. By adding dissociating means, fragment ions originated only from the selected object ions can be analyzed, which enables the identification and structural analysis of the sample at high accuracy.

This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.